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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 DESCRIPTION *With TO-220 package *Low collector saturation voltage *Complement to type 2SB867 *Excellent linearity of hFE APPLICATIONS *For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 130 80 7 3 6 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA ;IE=0 IC=2A; IB=0.1A IC=2A; IB=0.1A VCB=100V;IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=0.5A ; VCE=2V IC=0.5A ; VCE=10V 45 60 MIN 80 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT 2SD959 TYP. MAX UNIT V 0.5 1.5 10 50 V V A A 260 30 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=0.5A IB1=-IB2=50mA 0.5 2.5 0.15 s s s hFE-2 classifications R 60-120 Q 90-180 P 130-260 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD959 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD959 5 |
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