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APTGF90A60T1G
Phase leg NPT IGBT Power Module
5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11
VCES = 600V IC = 90A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant
CR1
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 600 110 90 315 20 416 200A @ 600V
APTGF90A60T1G - Rev 0
Unit V
August, 2007 1-6
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF90A60T1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 90A Tj = 125C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 2.5 5 150 Unit A V V nA
2.0 2.2 3
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 90A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 90A RG = 5 VGE = 15V Tj = 125C VBus = 400V IC = 90A Tj = 125C RG = 5 Min Typ 4300 470 400 330 290 200 26 25 150 30 26 25 170 40 4.3 mJ 3.5 Max Unit pF
nC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =400A/s
Min 600
Typ
Max 35 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
25 160 70 960
ns nC
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60 1.8 2.2 1.5
2.2
APTGF90A60T1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.3 0.65 150 125 100 4.7 80 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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APTGF90A60T1G
Typical Performance Curve
Output characteristics (VGE=15V) 250 250 Output Characteristics (VGE=10V)
Ic, Collector Current (A)
Ic, Collector Current (A)
200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
TJ=25C
200 150 100 50 0
250s Pulse Test < 0.5% Duty cycle TJ=25C
TJ=125C
TJ=125C
1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
4
250
VGE, Gate to Emitter Voltage (V)
18
250s Pulse Test < 0.5% Duty cycle
Gate Charge
IC = 90A TJ = 25C VCE=120V VCE=300V
Ic, Collector Current (A)
16 14 12 10 8 6 4 2 0 0
200 150 100 50 0 0
VCE=480V
TJ=125C
TJ=25C
1
23456789 VGE, Gate to Emitter Voltage (V)
10
50
100 150 200 250 Gate Charge (nC)
300
350
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 10 12 14 VGE, Gate to Emitter Voltage (V) 8 16
Ic=90A Ic=45A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=180A
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature
Ic=45A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=90A Ic=180A
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A)
120 100
1.10 1.00
60 40 20 0 25 50 75 100 125 150
TC, Case Temperature (C)
0.90
0.80 25 50 75 100 125 TJ, Junction Temperature (C)
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APTGF90A60T1G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35
VGE = 15V
Turn-Off Delay Time vs Collector Current 250
VGE=15V, TJ=125C
30 25 20 15 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80
VCE = 400V RG = 5 Tj = 25C VCE = 400V RG = 5
200
150
100
VCE = 400V RG = 5
VGE=15V, TJ=25C
50 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 5
80
tr, Rise Time (ns)
tf, Fall Time (ns)
60
VGE=15V, TJ=125C
60
TJ = 125C
40
40
20
20
TJ = 25C
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 Eon, Turn-On Energy Loss (mJ) 6 4 2 0 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 16 Switching Energy Losses (mJ)
VCE = 400V VGE = 15V TJ= 125C VCE = 400V RG = 5
6 5 4 3 2 1 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 5
TJ = 125C
TJ=125C, VGE=15V
TJ=25C, VGE=15V
TJ = 25C
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A) Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) 10 8 6 4 2 0 25 50 75
Eon, 90A Eoff, 90A Eoff, 45A Eon, 45A
VCE = 400V VGE = 15V RG = 5
Eon, 180A Eoff, 180A
Eon, 180A
12
Eoff, 90A
Eoff, 180A
8
Eon, 90A Eoff, 45A
4
Eon, 45A
0
10
20
30
40
50
Gate Resistance (Ohms)
100
125
TJ, Junction Temperature (C)
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APTGF90A60T1G
Capacitance vs Collector to Emitter Voltage 10000 IC, Collector Current (A)
Cies
Reverse Bias Safe Operating Area 250 200 150 100 50 0
C, Capacitance (pF)
1000
Coes Cres
100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
0
200 400 600 800 VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7
0.1 0.05 0 0.00001
Fmax, Operating Frequency (kHz)
200 160 120 80 40 0
Operating Frequency vs Collector Current
VCE = 400V D = 50% RG = 5 TJ = 125C TC = 75C
ZVS
ZCS
Hard switching
20
40 60 80 100 IC, Collector Current (A)
120
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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Microsemi reserves the right to change, without notice, the specifications and information contained herein
August, 2007

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