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| SMD Type PNP General Purpose Amplifier KMBT2907 Transistors SOT-23 Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 Collector Current to Continuous :IC= -600mA +0.1 2.4-0.1 Power Dissipation :PD=250mW +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PD RJA TJ, Tstg Rating -60 -40 -5 -600 250 500 -55 to +150 Unit V V V mA mW / W 0-0.1 www.kexin.com.cn 1 SMD Type KMBT2907 Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO IB ICEX ICBO Testconditons IC = -10 A, IE = 0 IC = -10 mA, IB = 0 IE = -10A, IC = 0 VEB = -0.5 V VCE = -30 V VCB = -50 V, IE = 0 VCB = -50 V, IE = 0, TA = 150 IC = -0.1 mA, VCE = -10 V IC = -1.0 mA, VCE = -10 V DC Current Gain hFE IC = -10 mA, VCE = -10 V IC = -150 mA, VCE = -10 V IC = -500 mA, VCE = -10 V Collector-Emitter Saturation Voltage* VCE(sat) IC = -150 mA, IB = -15 mA IC = -500 mA, IB = -50 mA Base-Emitter Saturation Voltage Current Gain - Bandwidth Product Output Capacitance Input Capacitance Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VBE(sat) fT Cobo Cibo ton td tr toff ts tf VCC = -6.0 V, IC = -150 mA,IB1 = IB2 = -15 mA VCC = -30 V, IC = -150 mA,IB1 = -15 mA IC = -150 mA, IB = -15 mA IC = -500 mA, IB = -50 mA IC = -50 mA, VCE = -20 V,f = 100 MHz VCB = -10 V, IE = 0,f = 100 kHz VEB = -2.0 V, IC = 0,f = 100 kHz Transistors Min -60 -40 -5 Max Unit V V V -50 -50 -20 -20 35 50 75 100 30 -0.4 -1.6 -1.3 -2.6 200 8.0 30 45 10 40 100 80 30 300 nA nA nA A V V V V MHz pF pF ns ns ns ns ns ns Marking Marking W2F 2 www.kexin.com.cn SMD Type KMBT2907 Typical Electrical Characteristics VCEBAT COLLECTOR EMITTER VOLTAGE (V) hFE TYPICAL PULSED CURRENT GAIN 500 VCE=5V 400 300 200 100 0 0.1 0.3 1 3 10 30 100 300 25 C 125 C 0.5 b=10 0.4 0.3 Transistors 25 C 0.2 0.1 0 1 10 100 500 125 C -40 C -40 C IC COLLECTOR CURRENT(mA) IC COLLECTOR CURRENT(mA) FIG.1 Typical Pulsed Current Gain vs Collector Current FIG.2 Collector-Emitter Saturation Voltage vs collector Current VBEST BASE EMITTER VOLTAGE (V) VBEON BASE EMITTER ON VOLTAGE (V) 1 0.8 0.6 0.4 0.2 0 0.1 VCE=5V 1 0.8 0.6 125 C 0.4 b=10 0.2 0 1 10 100 500 -40 C 25 C -40 C 25 C 125 C 1 10 25 Ic-COLLECTOR CURRENT (mA) Ic-COLLECTOR CURRENT (mA) FIG.3 Base-Emitter Saturation Voltage vs Collector Current FIG.4 Base Emitter ON Voltage vs Collector Current ICBO-COLLECTOR CUREENT (nA) 100 20 CAPACITANCE (pF) VCB=35V 10 16 12 1 Cib 8 4 0 -0.1 0.1 0.01 25 50 75 100 125 Cob -1 -10 -50 TA- AMBIENT TEMPERATURE ( C) REVERSE BIAS VOLTAGE (V) FIG.5 Collector-Cutoff Current vs. Ambient Temperature FIG.6 Input and Output Capacitance vs Reverse Bias Voltage www.kexin.com.cn 3 |
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