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ECO-PACTM 2 Power MOSFET in ECO-PAC 2 Single MOSFET Die PSMG 100/05* I K10 X18 A1 LN9 ID25 VDSS RDSon = 82 A = 500 V = 50 m Preliminary Data Sheet K13 K15 *NTC optional MOSFET Symbol VDSS VDGR VGS VGSM ID25 ID80 EAR EAS dv/dt PD Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 80C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 V 500 V 20 30 82 62 60 3 5 400 V V A A mJ J V/ns W Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 3000V electrical isolation * Low drain to tab capacitance(< 25pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier * UL certified, E 148688 Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control Advantages * Easy assembly * Space savings * High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 100 2 50 45 9400 1280 460 45 60 120 45 330 55 155 0.30 0.15 V V nA A mA m S pF pF pF ns ns ns ns VDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VGS = 0 V, ID = 5 mA VDS = VGS, ID = 8 mA VGS = 20 V, VDS = 0 VDS = VDSS, TJ = 25C VGS = 0 V, TJ = 125C VGS = 10 V, ID = IT, 1) VDS = 10 V, ID = IT, 1) VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 (External), VGS = 10 V, VDS = 0.5 * VDSS, ID = IT with heatsink compound (0.42 K/m.K; 50 m) nC nC Caution: These Devices are nC sensitive to electrostatic K/W discharge. Users should observe K/W proper ESD handling precautions. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Note: 1) 2) Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 85 340 1.5 250 1.4 13 A A V ns C A Dimensions in mm (1 mm = 0.0394") Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V IF = 50A,-di/dt = 100 A/s, VR = 100 V Pulse test, t 300 s, duty cycle d 2% IT test current: IT = 25A Module Symbol TVJ Tstg VISOL Md a IISOL 1 mA; 50/60 Hz; t = 1 s Mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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