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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 5A *DC Current Gain: hFE= 25-100 @IC= 2.5A *Complement to Type 2N4904 APPLICATIONS *Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 40 40 5 5 1 87.5 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 2.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N4913 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0 40 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(on) Base-Emitter On Voltage IC= 2.5A; VCE= 2V 1.4 V ICEO Collector Cutoff Current VCE= 40V; IB= 0 1.0 mA ICBO Collector Cutoff Current VCB= 40V; IE= 0 VCE= 40V; VBE(off)= -1.5V VCE= 40V; VBE(off)= -1.5V, TC=150 VEB=-5V; IC= 0 0.1 0.1 2.0 1.0 mA ICEV Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 2.5A; VCE= 2V 25 100 hFE-2 DC Current Gain IC= 5A; VCE= 2V 7 fT Current-Gain--Bandwidth Product IC= 1A; VCE= 10V; ftest= 1.0MHz 4 MHz isc Websitewww.iscsemi.cn 2 |
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