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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3749 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V(Min.) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 800 V 500 V 7 V 3 A 6 A 1 A .cn mi e IC Collector Current-Continuous ICM Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature PC 25 W TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 5mA; RBE= IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 1.5A; IB= 0.3A IC= 1.5A; IB= 0.3A VCB= 500V; IE= 0 VEB= 5V; IC= 0 MIN 500 800 7 2SC3749 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V A A Collector Output Capacitance Current-Gain--Bandwidth Product Switching times ton tstg tf w w scs .i w IC= 0.3A; VCE= 5V IC= 1.5A; VCE= 5V IE= 0; VCB= 10V; f= 1MHz .cn mi e 15 8 50 18 pF MHz IC= 0.3A; VCE= 10V Turn-on Time Storage Time Fall Time IC= 2A, IB1= 0.4A; IB2= -0.8A; RL= 100; VCC= 200V 0.5 3.0 0.3 s s s hFE-1 Classifications L 15-30 M 20-40 N 30-50 isc Websitewww.iscsemi.cn 2 |
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