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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD822 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Low Collector Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 6A APPLICATIONS *Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1500 V 600 V 5 V 7 A -7 A 50 W .cn mi e IE Emitter Current- Continuous PC Collector Power Dissipation @ TC90 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD822 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain--Bandwidth Product tf Fall Time w w. w IC= 0.1A; VCE= 10V IC= 6A, IBend= 1.2A .cn mi cse is 8 165 pF 3 MHz 1.0 s isc Websitewww.iscsemi.cn 2 |
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