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APTGT75A170D1G
Phase leg Trench + Field Stop IGBT Power Module
Q1 4 5 Q2 6 7 3
VCES = 1700V IC = 75A @ Tc = 80C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
1
Features *
2
* * * Benefits * * * * * * *
Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive High level of integration M5 power connectors
Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1700 130 75 150 20 465 150A @ 1600V Unit V A V W
December, 2009 1-4 APTGT75A170T1G - Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT75A170D1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 75A Tj = 125C VGE = VCE , IC = 3mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=75A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 75A RG = 18 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 75A RG = 18 VGE = 15V Tj = 125C VBus = 900V IC = 75A Tj = 125C RG = 18 VGE 15V ; VBus = 1000V tp 10s ; Tj = 125C Min Typ 6800 277 220 0.85 280 80 850 120 300 100 1000 200 27 mJ 24.5 300 A Max Unit pF C
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Err
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 250 500
Unit V A A V ns C mJ
December, 2009 2-4 APTGT75A170T1G - Rev 1
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
IF = 75A
75 1.8 1.9 410 520 19 31 9 17.5
2.2
IF = 75A VR = 900V di/dt =800A/s
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APTGT75A170D1G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M5 M6 IGBT Diode 4000 -40 -40 -40 2 3 Min Typ Max 0.27 0.5 150 125 125 3.5 5 180 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D1 Package outline (dimensions in mm)
Typical Performance Curve
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 20
VCE=900V D=50% RG=18 TJ=125C TC=75C
Forward Characteristic of diode 150
TJ=25C
15
ZCS ZVS
112.5 IF (A)
10
75
5
hard switching
37.5
TJ=125C
0 0 20 40 60 IC (A) 80 100 120
0 0 0.5 1 1.5 VF (V) 2 2.5 3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
rectangular Pulse Duration (Seconds)
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3-4
APTGT75A170T1G - Rev 1
December, 2009
APTGT75A170D1G
Output Characteristics (VGE=15V) 150 125 IC (A) 100 75 50 25 0 0 0.5 1 1.5 2 VCE (V) Transfert Characteristics
TJ=25C
TJ=125C TJ=25C
Output Characteristics 150 TJ = 125C 112.5 IC (A)
VGE=13V VGE=15V VGE=20V
75
37.5
VGE=9V
2.5
3
3.5
4
0 0 1 2 3 VCE (V) 4 5
Energy losses vs Collector Current 80 60
TJ=125C VCE = 900V VGE = 15V RG = 18 TJ = 125C Eon
150
112.5 E (mJ) IC (A)
Eoff
75
TJ=125C
40 20 0
37.5
Err
0 5 6 7 8 VGE (V) Switching Energy Losses vs Gate Resistance 100
VCE = 900V VGE =15V IC = 75A TJ = 125C
9
10
11
0
37.5
75 IC (A)
112.5
150
Reverse Bias Safe Operating Area 175 150
75 E (mJ)
Eon
125 IC (A) 100 75 50 25
VGE=15V TJ=125C RG=18
50
Eoff
25
Err
0 0 20
0 0 400 800 1200 1600 2000 VCE (V)
40 60 80 100 120 140 Gate Resistance (ohms)
0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
IGBT
0.1 0.05 0.0001 0.001
Single Pulse 0.01 0.1 1 10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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4-4
APTGT75A170T1G - Rev 1
rectangular Pulse Duration (Seconds)
December, 2009

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