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FGPF70N33BT 330V, 70A PDP IGBT
November 2008
FGPF70N33BT
330V, 70A PDP IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =1.7V @ IC = 70A * High input impedance * Fast switching * RoHS Compliant
tm
General Description
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
* PDP System
GC E
TO-220F
Absolute Maximum Ratings T
Symbol
VCES VGES ICpulse(1)* IC pulse(2)* PD TJ, Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current Pulsed Collector Current
C
= 25C unless otherwise noted
Description
Ratings
330 30 @ TC = 25 C @ TC = 25oC @ TC = 25 C @ TC = 100 C
o o o
Units
V V A A W W
o o
160 220 48 19 -55 to +150 300
Maximum Power Dissipation Maximum Power Dissipation
Operating Junction Temperature and Storage Temperrature Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
C C
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
---
Max.
2.62 40
Units
o o
C/W C/W
Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D< 0.01, pluse width < 5usec *IC_pulse limited by max Tj
(c)2008 Fairchild Semiconductor Corporation
1
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FGPF70N33BT Rev. A
FGPF70N33BT 330V, 70A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF70N33BT
Device
FGPF70N33BTTU
Package
TO-220F
Packaging Type
Tube
Max Qty Qty per Tube
50ea
per Box
--
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
330 ----
-0.3 ---
--250 400
V V/oC A nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V, IC = 70A, VGE = 15V, TC = IC = 70A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1380 140 60 ---pF pF pF 25oC 2.3 ----3.3 1.1 1.4 1.7 1.8 4.3 ----V V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 20A, VGE = 15V VCC = 200V, IC = 20A, RG = 5, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 20A, RG = 5, VGE = 15V, Resistive Load, TC = 25oC -----------13 26 46 198 13 28 48 268 49 6.8 17.5 -----------ns ns ns ns ns ns ns ns nC nC nC
FGPF70N33BT Rev. A
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FGPF70N33BT 330V, 70A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
220
TC = 25 C
o
Figure 2. Typical Output Characteristics
220
TC = 125 C
o
20V 15V
12V
20V
Collector Current, IC [A]
Collector Current, IC [A]
176
10V
176
15V
132
132
12V
88
8V
88
10V
44
44
8V
0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5
0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5
Figure 3. Typical Saturation Voltage Characteristics
220
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
220
Collector Current, IC [A]
176
TC = 25 C TC = 125 C
o
o
176 Collector Current, Ic [A]
Common Emitter Vce = 20V o Tc=25 C o Tc=125 C
132
132
88
88
44
44
0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6
0 0 2 4 6 8 10 Gate-Emitter Voltage, Vge [V] 12 14 16
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
1.8
70A
16
1.6 1.4
40A
12
1.2 1.0 0.8 25
8
40A 70A
IC = 20A
4
IC = 20A
50 75 100 125 150 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGPF70N33BT Rev. A
3
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FGPF70N33BT 330V, 70A PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
10000
Common Emitter VGE = 0V, f = 1MHz Cies TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
1000
Coes Cres
12
8
40A
100
4
70A IC = 20A
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
10 1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter TC = 25 C VCC = 100V
o
Figure 10. SOA Characteristics
500
10s
Gate-Emitter Voltage, VGE [V]
100
Collector Current, Ic [A]
100s
12
9
200V
10
1ms
6
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
10ms DC
3
0.1
0 0 10 20 30 40 Gate Charge, Qg [nC] 50 60
0.01 0.1
1 10 100 Collector-Emitter Voltage, VCE [V]
400
Figure 11. Turn-on Characteristics vs. Gate Resistance
200 100
tr
Figure 12. Turn-off Characteristics vs. Gate Resistance
1000
tf
Switching Time [ns]
Switching Time [ns]
td(off)
10
td(on) Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
100
Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
1 0 15 30 45 Gate Resistance, RG [] 60
10
0
15 30 45 Gate Resistance, RG []
60
FGPF70N33BT Rev. A
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FGPF70N33BT 330V, 70A PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
1000
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
1000
tf
Switching Time [ns]
100
TC = 125 C
Switching Time [ns]
tr
100
td(off)
10
td(on)
10
Common Emitter VGE = 15V, RG = 5 TC = 25 C TC = 125 C
o o
1 20
30
40
50
60
70
1 20
30
40
50
60
70
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
1000
Eoff
Figure 16. Switching Loss vs. Collector Current
3000 1000
Switching Loss [mJ]
Eoff
Switching Loss [mJ]
100
Eon
Eon
100
10
Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
10
Common Emitter VGE = 15V, RG = 5 TC = 25 C TC = 125 C
o o
1
0
10
20 30 40 Gate Resistance, RG []
50
1 20
30
40
50
60
70
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
400
Collector Current, IC [A]
100
10
Safe Operating Area VGE = 15V, TC = 125 C
o
1 1 10 100 600
Collector-Emitter Voltage, VCE [V]
FGPF70N33BT Rev. A
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FGPF70N33BT 330V, 70A PDP IGBT
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5 0.3 0.1 0.05 0.02 0.01
0.1
PDM t1 t2
0.01
single pulse
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
FGPF70N33BT Rev. A
6
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FGPF70N33BT 330V, 70A PDP IGBT
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20]
4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FGPF70N33BT Rev. A
7
15.87 0.20
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FGPF70N33BT 330V, 70A PDP IGBT
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Rev. I37
FGPF70N33BT Rev. A
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