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| IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS(R)-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 9.2 45 V m A Features * N-channel - Enhancement mode * AEC qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green Product (RoHS compliant) * 100% Avalanche tested Type IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0609 4N0609 4N0609 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25C, V GS=10V T C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25C I D=22.5A T C=25C Value 45 45 180 97 45 20 71 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.0 page 1 2009-03-24 IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=34A V DS=60V, V GS=0V, T j=25C V DS=60V, V GS=0V, T j=125C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=10 V, I D=45 A V GS=10V, I D=45A, SMD version 60 2.0 3.0 0.01 4.0 1 A V 2.1 62 62 40 K/W Values typ. max. Unit - 5 7.9 7.6 100 100 9.4 9.1 nA m Rev. 1.0 page 2 2009-03-24 IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25C V GS=0V, I F=45A, T j=25C V R=30V, I F=I S, di F/dt =100A/s 0.6 0.95 45 180 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=45A, V GS=0 to 10V 17 4 36 5.6 22 8 47 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30V, V GS=10V, I D=45A, R G=3.5 V GS=0 V, V DS=25 V, f =1 MHz 2911 715 30 15 40 20 5 3785 930 60 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 45 - ns Reverse recovery charge2) 1) Q rr - 40 - nC Current is limited by bondwire; with an R thJC = 2.1K/W the chip is able to carry 66A at 25C. Defined by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-24 IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V; SMD 80 70 50 40 60 50 30 P tot [W] 40 30 20 I D [A] 20 10 0 0 50 100 150 200 0 50 100 150 200 10 0 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0; SMD parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 1 s 0.5 100 0.1 100 10 s I D [A] 100 s Z thJC [K/W] 0.05 10-1 0.01 1 ms 10 10-2 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2009-03-24 IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 5 Typ. output characteristics I D = f(V DS); T j = 25 C; SMD parameter: V GS 180 10 V 8V 7.5 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C; SMD parameter: V GS 20 5.5 V 6V 6.5 V 7V 7.5 V 150 7V 18 16 120 R DS(on) [m] I D [A] 6.5 V 14 90 12 60 6V 10 5.5 V 30 8 10 V 0 0 1 2 3 4 6 0 40 80 120 160 200 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 200 -55 C 25 C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 45 A; V GS = 10 V; SMD 14 160 12 175 C R DS(on) [m] 3 4 5 6 7 8 120 10 I D [A] 80 8 40 6 0 4 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2009-03-24 IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 104 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 3.5 350 A Ciss V GS(th) [V] 3 35 A C [pF] 103 Coss 2.5 102 2 Crss 1.5 -60 -20 20 60 100 140 180 101 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: T j(start) 100 25 C 100 C 150 C 102 10 175 C 25 C 25 C 10 1 I AV [A] 175 C I F [A] 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2009-03-24 IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 13 Avalanche energy E AS = f(T j); I D = 22.5 A 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 100 66 80 64 V BR(DSS) [V] 60 62 E AS [mJ] 40 60 20 58 0 25 75 125 175 56 -55 -15 25 65 105 145 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 50 A pulsed parameter: V DD 10 9 8 7 6 12 V 48 V 16 Gate charge waveforms V GS Qg V GS [V] 5 4 3 2 V g s(th) Q g (th) 1 0 0 5 10 15 20 25 30 35 40 Q sw Q gs Q gd Q gate Q gate [nC] Rev. 1.0 page 7 2009-03-24 IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-24 IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 Revision History Version Revision 1.0 Date Changes 24.03.2009 Final data sheet Rev. 1.0 page 9 2009-03-24 |
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