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| SOT-23 Plastic-Encapsulate Transistors SOT-23 S9012 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Complementary to S9013 Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -25 -5 -500 300 150 -55-150 Units V V V mA mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions MIN -40 -25 -5 -0.1 -0.1 -0.1 120 400 -0.6 -1.2 150 5 V V MHz pF TYP MAX UNIT V V V IC= -100A, IE=0 IC= -1mA, IB=0 IE=-100A, IC=0 VCB=-40V, IE=0 VCE=-20V, IB=0 VEB= -5V, IC=0 VCE=-1V, IC= -50mA IC=-500mA, IB= -50mA IC=-500mA, IB= -50mA VCE=-6V, IC= -20mA A A A f=30MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF hFE Rank Range L 120-200 H 200-350 J 300-400 Typical Characteristics S9012 |
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