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| SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement G D BV DSS RDS(ON) ID 18V 25m 35A S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID @ TC=25C ID @ TC=125C IDM PD @ TC=25C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 Rating 18 12 35 16 90 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/C C C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 110 Unit C/W C/W Rev.2.02 1/29/2004 www.SiliconStandard.com 1 of 6 SSM9916H,J Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS BV DSS/ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 18 0.5 - Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98 527 258 112 Max. Units 25 40 1 1 25 100 V V/C m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25C, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=125 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=18V, VGS=0V VDS=18V ,VGS=0V VGS= 12V ID=18A VDS=18V VGS=5V VDS=10V ID=18A RG=3.3 ,VGS=5V RD=0.56 VGS=0V VDS=18V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 35 90 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25C, IS=35A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. Rev.2.02 1/29/2004 www.SiliconStandard.com 2 of 6 SSM9916H,J 100 80 T C =25 o C 80 V G =4.5V 70 T C =150 o C V G =4.5V 60 ID , Drain Current (A) V G =3.5V 60 ID , Drain Current (A) V G =3.5V 50 40 V G =2.5V 40 V G =2.5V 30 20 20 V G =1.5V 10 V G =1.5V 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 1.8 I D= 6 A 28 I D =6A 1.6 T C =25 C o V G =4.5V 24 Normalized R DS(ON) 1 2 3 4 5 6 26 1.4 RDSON (m ) 1.2 22 1.0 20 0.8 18 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature Rev.2.02 1/29/2004 www.SiliconStandard.com 3 of 6 SSM9916H,J 40 60 35 50 30 ID , Drain Current (A) 40 25 PD (W) 25 50 75 100 125 150 20 30 15 20 10 10 5 0 0 0 T c , Case Temperature ( C) o T c , Case Temperature ( o C) 50 100 150 Fig 5. Maximum Drain Current vs. Case Temperature Fig 6. Typical Power Dissipation 1000 1 DUTY=0.5 100 10us Normalized Thermal Response (R thjc) 0.2 ID (A) 10 100us 1ms 10ms 100ms 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t T 1 T c =25 o C Single Pulse 0.1 0.1 1 10 100 Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Rev.2.02 1/29/2004 www.SiliconStandard.com 4 of 6 SSM9916H,J 16 f=1.0MHz 1000 I D =18A 14 Ciss V DS =10V V DS =15V Coss VGS , Gate to Source Voltage (V) 12 10 V DS =18V 8 C (pF) 100 Crss 6 4 2 0 0 5 10 15 20 25 30 35 40 45 10 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.2 10 0.95 T j =150 o C VGS(th) (V) T j =25 o C IS (A) 1 0.7 0.1 0.45 0.01 0 0.4 0.8 1.2 1.6 0.2 -50 V SD (V) T j , Junction Temperature ( o C ) 0 50 100 150 Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage vs. Junction Temperature Rev.2.02 1/29/2004 www.SiliconStandard.com 5 of 6 SSM9916H,J VDS 90% RD D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 5v - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G S + RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Rev.2.02 1/29/2004 www.SiliconStandard.com 6 of 6 |
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