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| WTN9435 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 2,4 DRAIN DRAIN CURRENT -6.0 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE Features: * Super high dense cell design for low RDS(ON) RDS(ON) < 50m @ VGS = -10V * Simple Drive Requirement * Lower On-Resistance * Fast Switching 3 SOURCE 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 4 1 2 3 SOT-223 ( Maximum Ratings(TA=25 Rating Drain-Source Voltage Gate-Source Voltage Unless Otherwise Specified) Symbol VDS VGS ID IDM PD RJA TJ,Tstg Value -30 25 -6.0 -4.8 -20 2.7 45 -55 ~ +150 Unit V V A A W C/W C Continuous Drain Current3 ,VGS@10V(TA=25C) ,VGS@10V(TA=70C) Pulsed Drain Current1 Total Power Dissipation(TA=25C) Maximum Junction-ambient3 Operating Junction and Storage Temperature Range Device Marking WTN9435 = 9435 http:www.weitron.com.tw WEITRON 1/6 07-Oct-05 WTN9435 Electrical Characteristics (TA = 25 Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0, ID = -250A Gate-Source Threshold Voltage VDS = VGS, ID = -250A Gate-Source Leakage Current VGS = 25V Drain-Source Leakage Current(Tj=25C) VDS = -30A, VGS = 0 Drain-Source Leakage Current(Tj=70C) VDS = -24V, VGS = 0 Drain-Source On-Resistance2 VGS = -10A, ID = -5.3A VDS = -4.5A, ID = -4.2A Forward Transconductance VDS = -10A, ID = -5.3A V(BR)DSS VGS(Th) IGSS -30 -1.0 -3.0 100 V V nA IDSS - 10 -1 -25 50 100 - A RDS(ON) - m gfs S Dynamic Input Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz Output Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz Reverse Transfer Capacitance VGS = 0V, VDS = -15V, f = 1.0MHz Ciss Coss Crss 507 222 158 912 pF http:www.weitron.com.tw WEITRON 2/6 07-Oct-05 WTN9435 Switching Turn-on Delay Time2 VDS=-15V,VGS=-10V,ID=1A,RD=15,RG=6 Rise Time VDS=-15V,VGS=-10V,ID=1A,RD=15,RG=6 Turn-off Delay Time VDS=-15V,VGS=-10V,ID=1A,RD=15,RG=6 Fall Time VDS=-15V,VGS=-10V,ID=1A,RD=15,RG=6 Total Gate Charge2 VDS=-24V,VGS=-4.5V,ID=-5.3A Gate-Source Charge VDS=-24V,VGS=-4.5V,ID=-5.3A Gate-Drain Change VDS=-24V,VGS=-4.5V,ID=-5.3A td(on) 11 8 25 17 9.2 2.8 5.2 ns 16 nC tr td(off) tf Qg Qgs Qgd Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V, IS=-2.3A Reverse Recovery Time VGS=0V, IS=-5.3A, dl/dt=100A/s Reverse Recovery Charge VGS=0V, IS=-5.3A, dl/dt=100A/s VSD Trr Qrr 29 20 -1.2 V ns nC Note: 1. Pulse width limited by max, junction temperature. 2. Pulse width 300s, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 120C/W when mounted on Min, copper pad. WEITRON http:www.weitron.com.tw 3/6 07-Oct-05 WTN9435 30 25 20 15 10 5 0 TA=25 C -10V -8.0V -6.0V -5.0V VG = -4.0V 30 25 TA =150 C -10V -8.0V -6.0V -5.0V VG =-4.0V -I D ,DRAIN CURRENT (A) -I D ,Drain Current (A) 5 20 15 10 5 0 0 -V DS 1 2 3 4 ,DRAIN-TO-SOURCE VOLTAGE(V) 0 1 FIG.1 Typical Output Characteristics 110 100 90 80 T A = -25C I D = -5.3A 1.8 1.6 Fig.2 Typical Output Characteristics I D = -5.3A -VDS ,Drain-to-source Voltage(V) 2 3 4 5 6 7 VG = -10V Normalized RDs(on) 1.4 1.2 1.0 0.8 0.0 -50 R Ds(on) (m) 70 60 50 40 30 3 4 5 6 7 8 9 10 11 0 50 100 150 Fig.3 On-Resistance v.s. Gate Voltage 100 4 -VGS ,Gate-to-source Voltage(V) Fig.4 Normalized OnResistance Tj ,Junction Temperature(C) 10 3 -V GS(th) (V ) 1.3 1.5 Tj = 150C -I S (A ) Tj = 25C 1 2 0.1 1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0 -50 0 50 100 150 Fig.5 Forward Characteristics of Reverse Diode VDS ,Source-to-Drain Voltage(V) Fig.6 Gate Threshold Voltage v.s. Junction Temperature Tj ,Junction Temperature(C) WEITRON http://www.weitron.com.tw 4/6 07-Oct-05 WTN9435 14 10000 I D = -5.3A V DS = -24V 1000 f = 1.0MHz -VGS , Gate to Source Voltage(V) 12 10 8 6 4 2 0 C ( pF) Ciss Coss Crss 100 0 2 4 6 8 10 12 14 16 18 0 1 5 Fig 7. Gate Charge Characteristics 100 QG , Total Gate Charge(nC) -VDS, Drain-to-Source Voltage(V) 9 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Duty factor = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 1ms 10ms 1 Normalized Thermal Response(R ja ) -I D (A) 100ms Is TA = 25C Single Pulse DC 1 10 100 PDM t T 0.01 0.1 Single pulse Duty factor = t / T Peak Tj=P DMx R ju + Ta R ja=120C / W 0.01 0.1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -VDS , Drain-to-Source Voltage(V) Fig 9. Maximum Safe Operation Area VDS 90% Fig 10. Effective Transient Thermal Impedance VG QG -4.5V t, Pulse Width(s) QGS 10% VGS td(on) tr td(off) tf QGD Charge Q Fig 11. Switching Time Circuit Fig.12 Gate Charge Waveform WEITRON http://www.weitron.com.tw 5/6 07-Oct-05 WTN9435 SOT-223 Outline Dimensions unit:mm A F DIM 4 S 1 2 3 B L D G C H M K J A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 WEITRON http://www.weitron.com.tw 6/6 07-Oct-05 |
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