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| 25 -10V 20 -4.5V -3V 10 Vds=-5V 8 -Id (A) -2.5V 10 -Id (A) 15 6 125C 4 5 Vgs=-2V 2 25C 0 0 1 2 3 4 5 -Vds (Volts) Fig 1: On-Region Characteristics 120 100 0 0 0.5 1 1.5 2 2.5 3 -Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Vgs=-2.5V Normalized On-Resistance 1.4 Id=-5A Vgs=-4.5V Vgs=-10V Rds(on) (m:) 80 60 1.2 Vgs=-2.5V Id=-2A Vgs=-4.5V 40 Vgs=-10V 20 0 2 4 6 8 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 190 170 150 Id=-2A 1.0E+01 1.0E+00 1.0E-01 125C Rds(on) (m:) 130 -Is (A) 125C 110 90 70 50 30 10 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 Vds=-15V Id=-5A 4 1400 1200 Capacitance (pF) 1000 800 600 400 Coss 200 Crss Ciss -Vgs (Volts) 3 2 1 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C Ta=25C 10Ps Rds(on) limited 0.1s 40 Tj(max)=150C Ta=25C 30 -Id (Amps) 1ms 10ms 1s 10s DC 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 Power (W) 10.0 100Ps 20 1.0 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk =Ta+Pdm.ZTja .RTja RTja =62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 10 125C 250 f = 1MHz 1 200 Capacitance (pF) 25C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 If (Amps) 150 0.1 100 0.01 50 0.001 0 0 15 20 25 30 Vka (Volts) Figure 13: Schottky Capacitance Characteristics 5 10 Vf (Volts) Figure 12: Schottky Forward Characteristics 0.7 0.6 0.5 100 If=3A 10 1 Vr=30V 0.1 0.01 0.001 0 25 50 75 100 125 Temperature (C) 150 175 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature 0.4 If=1A 0.3 0.2 0.1 Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk =Ta+Pdm.ZTja .RTja RTja =62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Leakage Current (mA) Vf (Volts) 0.1 Pd Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance |
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