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CYStech Electronics Corp. Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features * Simple drive requirement * Low on-resistance * Fast switching speed * Pb-free package Applications * Power management in notebook computer, portable equipment and battery powered systems. Equivalent Circuit MTC4503Q8 Outline SOP-8 GGate SSource DDrain MTC4503Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 C Continuous Drain Current @TA=70 C Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,ja Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 2/8 (Note 1) (Note 1) Limits N-channel P-channel 30 -30 20 20 6.9 -6.3 5.5 -5.0 30 -30 2 0.016 -55~+150 -55~+150 62.5 Unit V V A A A W W / C C C C/W Note : 1.Surface mounted on 1 in copper pad of FR-4 board, 135C/W when mounted on minimum copper pad 2.Pulse width limited by maximum junction temperature N-Channel Electrical Characteristics (Tj=25C, unless otherwise specified) Symbol Static BVDSS BVDSS/Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. 30 1.0 Typ. 0.005 5.7 610 160 120 8 7 19 6 9 2 6 18 11 Max. 3.0 100 1 25 28 42 970 15 1.2 Unit V V/C V nA A A m S Test Conditions VGS=0, ID=250A Reference to 25C, ID=1mA VDS=VGS, ID=250A VGS=20V, VDS=0 VDS=30V, VGS=0 VDS=24V, VGS=0, Tj=70C ID=6A, VGS=10V ID=4A, VGS=4.5V VDS=10V, ID=6A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr MTC4503Q8 pF VDS=25V, VGS=0, f=1MHz VDS=15V, ID=1A, VGS=10V, RG=3.3, RD=15 ns nC VDS=24V, ID=6A, VGS=4.5V V ns nC VGS=0V, IS=6A IS=6A, VGS=0V, dI/dt=100A/s *Pulse Test : Pulse Width 300s, Duty Cycle2% CYStek Product Specification CYStech Electronics Corp. Symbol Static BVDSS BVDSS/Tj VGS(th) IGSS IDSS IDSS *RDS(ON) Min. -30 -1.0 Typ. -0.004 5.8 960 300 220 12 8 42 34 15 3 9 24 18 Max. -3.0 100 -1 -25 36 55 1540 24 -1.2 Unit V V/C V nA A A m S Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 3/8 P-Channel Electrical Characteristics (Tj=25C, unless otherwise specified) Test Conditions VGS=0, ID=-250A Reference to 25C, ID=-1mA VDS=VGS, ID=-250A VGS=20V, VDS=0 VDS=-30V, VGS=0 VDS=-24V, VGS=0, Tj=70C ID=-6A, VGS=-10V ID=-4A, VGS=-4.5V VDS=-10V, ID=-6A *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *VSD *trr *Qrr - pF ns ns ns ns nC nC nC V ns nC VDS=-25V, VGS=0, f=1MHz VDS=-15V, ID=-1A, VGS=-10V, RG=3.3, RD=15 VDS=-24V, ID=-6A, VGS=-4.5V VGS=0V, IS=-6A IS=-6A, VGS=0V, dI/dt=100A/s *Pulse Test : Pulse Width 300s, Duty Cycle2% MTC4503Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 4/8 MTC4503Q8 CYStek Product Specification CYStech Electronics Corp. N-channel Characteristic Curves(Cont.) Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 5/8 MTC4503Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 6/8 MTC4503Q8 CYStek Product Specification CYStech Electronics Corp. P-channel Characteristic Curves(Cont.) Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 7/8 MTC4503Q8 CYStek Product Specification CYStech Electronics Corp. SOP-8 Dimension Top View A Right side View G Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 8/8 Marking: I B C H Device Name Date Code 4503SS J D Front View Part A E Part A K L N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 M F *: Typical DIM A B C D E F G H Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC4503Q8 CYStek Product Specification |
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