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APTGT600U170D4G
Single switch Trench + Field Stop IGBT Power Module
1
VCES = 1700V IC = 600A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration
3 5 2
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1700 1100 600 1200 20 2900 1200A@1600V Unit V
July, 2008 1-5 APTGT600U170D4G - Rev 2
A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT600U170D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 600A Tj = 125C VGE = VCE , IC = 24 mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 5 2.4 6.4 400 Unit mA V V nA
5.2
Dynamic Characteristics
Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=15V, IC=600A VCE=900V Inductive Switching (25C) VGE = 15V VBus = 900V IC = 600A RG = 2.4 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 600A RG = 2.4 VGE = 15V Tj = 125C VBus = 900V IC = 600A Tj = 125C RG = 2.4 VGE 15V ; VBus = 1000V tp 10s ; Tj = 125C Min Typ 51 1.8 6.8 280 100 850 150 330 100 1000 230 200 mJ 190 2200 A Max Unit nF C
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF Err trr Qrr Maximum Reverse Leakage Current DC forward current Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge IF = 600A VR = 900V IF = 600A VGE = 0V Test Conditions VR=1700V Tj = 25C Tj = 125C Tc=80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1700 Typ Max 750 1000 600 1.8 1.9 85 145 450 600 150 250 2.2 Unit V A A V mJ ns C
July, 2008 2-5 APTGT600U170D4G - Rev 2
di/dt =5200A/s
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APTGT600U170D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M4 M6 IGBT Diode 3500 -40 -40 -40 1 3 Min Typ Max 0.044 0.065 150 125 125 2 5 350 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D4 Package outline (dimensions in mm)
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3-5
APTGT600U170D4G - Rev 2
July, 2008
APTGT600U170D4G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 1200 1000
TJ=25C
1200 1000
IC (A)
TJ = 125C
VGE=19V
VGE=13V
800 600 400 200 0 0
800 IC (A)
TJ=125C
VGE=15V
600 400 200 0
VGE=9V
1
2 VCE (V)
3
4
0
1
2
3 VCE (V)
4
5
1200 1000 800
Transfert Characteristics 500
TJ=25C
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 2.4 TJ = 125C Eon
400 E (mJ) 300 200
IC (A)
600
TJ=125C
Eoff Er Er
400 200 0 5 6 7 8 VGE (V) Switching Energy Losses vs Gate Resistance 1000 800 E (mJ) 600 400
Eoff VCE = 900V VGE =15V IC = 600A TJ = 125C
100 0 9 10 11 0 200 400 IC (A) Reverse Bias Safe Operating Area 1400 1200
Eon
600
800
1000
1000 IC (A) 800 600 400 200 0 0
VGE=15V TJ=125C RG=2.4
200
Er
0 0 5 10 15 20 25 Gate Resistance (ohms) 30
400
800
1200
1600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.05 Thermal Impedance (C/W) 0.04 0.03 0.02 0.01 0 0.00001 0.9 0.7
IGBT
0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
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4-5
APTGT600U170D4G - Rev 2
July, 2008
0.5
APTGT600U170D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 30 25 20 15 10 5 0 0 200 400 IC (A) 600 800
hard switching ZCS ZVS VCE=900V D=50% RG=2.4 TJ=125C TC=75C
Forward Characteristic of diode 1200 1000
TJ=25C
800 IF (A) 600 400 200 0 0 0.5 1 1.5 VF (V) 2 2.5 3
TJ=125C TJ=125C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGT600U170D4G - Rev 2
July, 2008

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