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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTC143XEPT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-75/SOT-416) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated NPN transistors in one package. Built in bias resistor(R1=4.7k, Typ. ) 0.1 0.20.05 0.5 1.60.2 0.5 SC-75/SOT-416 (2) (3) 1.00.1 0.1 0.30.05 (1) CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. 0.1 0.20.05 0.80.1 MARKING XEA Gnd In 1 0.150.05 0.1Min. 0.6~0.9 0~0.1 1.60.2 CIRCUIT 2 R2 TR R1 3 Out Dimensions in millimeters SC-75/SOT-416 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Supply voltage Input voltage CONDITIONS - -7 - - Tamb 25 OC, Note 1 - MIN. MAX. 50 +20 100 V V UNIT mA 100 150 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance -55 - junction - soldering point - C C C/W O O RATING CHARACTERISTIC ( CHDTC143XEPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL VIoff) VI(on) VO(on) II IO(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IE=-5mA, VCE=10.0V f=100MHz = CONDITIONS IO=100uA; VCC=5.0V IO=20mA; VO=0.3V IO=10mA; II=0.5mA VI=5V VI=0V; VCC=50V IO=10mA; VO=5.0V - - - - 30 3.29 1.7 - MIN. 0.3 - - 0.1 - - - 4.7 2.1 250 TYP. MAX. - 2.5 0.3 1.8 0.5 - 6.11 2.6 - K MHz V V V mA uA UNIT Note 1.Pulse test: tp300uS; 0.02. RATING CHARACTERISTIC CURVES ( CHDTC143XEPT ) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 50 VO= 0.3V Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m OUTPUT CURRENT : Io (A) VCC= 5V INPUT VOLTAGE : VI(on) (V) 2m 1m 20 10 5 2 1 500m 200m 100m 100u 1m 10m 50m 100m Ta =- 40OC 25OC = 100OC 100u Ta=100OC 25OC -40 OC 10u 1u 0 1.0 2.0 3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) 1k 500 DC CURRENT GAIN : GI Fig.3 DC current gain vs. output current VO = 5V OUTPUT VOLTAGE : VO(on) (V) Fig.4 Output voltage vs. output current 1 500m 200m 100m 50m 20m 10m 5m 2m Ta=100OC 25OC -40 OC lO/lI=20 200 100 50 20 10 5 2 1 100u Ta=100OC 25OC -40OC 1m 10m 100m 1m 100u 1m 10m 100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A) |
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