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| MCR100-6/MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors P b Lead(Pb)-Free A SCRs 0.8 A RMS 400/600 Voltage G C 1.Cathode 2.Gate 3.Anode 1 2 3 TO-92 Maximum Ratings (TA=25C unless otherwise noted) Rating Repetitive Peak Off-stage Voltage Collector-Base Voltage Junction Temperature Range Storage Temperature Range Symbol VDRM ITRMS TJ Tstg MCR100-6 400 0.8 MCR100-8 600 Unit V A C C +150 -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics On State Voltage(1) ITM = 1A Gate Trigger Voltage VAK = 7V Peak Repetitve Forward and Reverse Blocking Voltage Symbol VTM VGT Min - Max 1.7 0.8 Unit V V V IDRM = 10A , VMAX = 10V Peak Forward or Reverse Blocking Current MCR100-6 MCR100-8 VDRM, VRRM 400 600 - - VAK = Rated, VDRM or VRRM Holding Current IHL = 20mA, AV = 7V Gate Trigger Current VAK = 7V IDRM, IRRM 10 A IH A2 A1 A B 5 15 30 80 5 15 30 80 200 mA IGT A Note 1. Forward current applied for 1 ms maximum duration, duty cycle 1% WE ITR O N http://www.weitron.com.tw 1/2 30-Jan-07 MCR100-6/MCR100-8 TO-92 Outline Dimensions E unit:mm C J K G Dim A B C D E G H J K L H TO-92 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A 2/2 30-Jan-07 |
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