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| Non-Cooled Large Area Red Silicon Avalanche Photodiode SD 630-70-72-500 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES * Low noise * High gain * High Speed DESCRIPTION The SD 630-70-72-500 is a non-cooled large area red enhanced silicon avalanche photodiode (APD) with high gain and low noise in a SHV package. APPLICATIONS * Instrumentation * Medical ABSOLUTE MAXIMUM RATING (TA)= 23C UNLESS OTHERWISE NOTED SYMBOL M TSTG TO TS PARAMETER Gain Storage Temperature Operating Temperature Soldering Temperature* -55 -55 MIN MAX 250 +70 +40 +240 C C C UNITS Responsivity (A/W) 120 100 80 60 40 SPECTRAL RESPONSE M = 200 120 100 80 60 Quantum Efficiency (%) R 20 0 250 300 350 400 450 500 550 600 650 QE 40 20 0 * 1/16 inch from case for 3 seconds max. 700 750 800 850 900 950 1000 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23C and Gain of 200 UNLESS OTHERWISE NOTED SYMBOL ID CJ IN lrange R Vop TVBR tr CHARACTERISTIC TEST CONDITIONS MIN TYP 280 130 2.5 300 100 1700 2 15 2000 22 MAX 600 5.5 1000 UNITS nA pF pA/Hz nm A/W V V nS Dark Current Junction Capacitance f = 1 MHz Noise Current Spectral Density f = 100 kHz Spectral Application Range Spot Scan l= 750 nm, VR = 0 V Responsivity Operating voltage Temp. Coeff. Breakdown voltage Constant Gain = 200 RL = 50 , l= 675nm Response Time* *Response time of 10% to 90% is specified at 675nm wavelength light. Each part is supplied with gain bias voltages and dark current data. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications and output data subject to change without notice. (c) 2007 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 * Phone (805) 987-0146 * Fax (805) 484-9935 * www.advancedphotonix.com REV 7/9/07 1050 |
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