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SSM9987GH
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PRODUCT SUMMARY
Low Gate Charge Single Drive Requirement Fast Switching Performance
D
BVDSS RDS(ON) ID
80V 90m 15A
G S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM9987GH) are available for low-profile aplications.
GD S
TO-252(H)
G
D
S
TO-251(J)
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 80 25 15 9 50 34.7 0.28 -55 to 150 -55 to 150
Units V V A A A W W/
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.6 110 Units /W /W
02/27/2008 Rev.1.00
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1
SSM9987GH
ELECTRICAL CHARACTERISTICS
(TJ=25 C unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 80 1 -
Typ. 0.09 15 11 3 6 8 12 19 3 980 75 50 1.1
Max. Units 90 105 3 10 100 100 18 1570 1.7 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A VGS=4.5V, ID=7A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=5V, ID=10A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS=25V ID=10A VDS=64V VGS=4.5V VDS=40V ID=10A RG=3.3,VGS=10V RD=4 VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
SOURCE-DRAIN DIODE
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s
Min. -
Typ. 33 44
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
02/27/2008 Rev.1.00
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2
SSM9987GH
30
30
T C =25 C ID , Drain Current (A)
o
ID , Drain Current (A)
20
10V 7 .0V 5.0V 4.5V
T C =150 C
o
10V 7 .0V 5.0V 4.5V
20
V G =3.0V
10
V G =3.0V
10
0
0 0 3 6 9 12 0 3 6 9 12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
180
1.9
ID=7A T C =25 C RDS(ON) (m )
140
o
1.6
I D = 10 A V G =10V
Normalized R DS(ON)
1.3
1.0
100
0.7
60
0.4
trr
-50 0 50 100
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Qrr
150
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
1.6
10
8
Normalized VGS(th) (V)
1.2
6
T j =150 o C
T j =25 o C
IS(A)
4
0.8
2
0
0.4 0 0.2 0.4 0.6 0.8 1 1.2
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
02/27/2008 Rev.1.00
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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SSM9987GH
f=1.0MHz
16 10000
I D = 10 A VGS , Gate to Source Voltage (V)
12 1000
8
C (pF)
V DS = 4 0V V DS = 50 V V DS = 64 V
C iss
100
C oss
4
C rss
0 0 5 10 15 20 25
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.0
1
Normalized Thermal Response (R thjc)
Duty factor=0.5
10.0
100us
0.2
ID (A)
0.1
0.1
0.05
1ms
1.0
PDM
0.02
t
0.01
T C =25 C Single Pulse
0.1 0.1 1 10
o
10ms 100ms DC
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
V DS , Drain-to-Source Voltage (V)
Qrr
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
V DS =5V
VG QG
ID , Drain Current (A)
20
T j =25 o C
T j =150 o C
4.5V QGS QGD
10
Charge
0 0 2 4 6
Q
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
02/27/2008 Rev.1.00
Fig 12. Gate Charge Waveform
4
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SSM9987GH
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
02/27/2008 Rev.1.00
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