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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 DESCRIPTION *With TO-3PFa package *Wide area of safe operation *High voltage,high speed APPLICATIONS *Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 6 18 2.5 100 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-base breakdown voltage CONDITIONS IC=5A ;IB=1.2A IC=5A ;IB=1.2A IE=1mA ;IC=0 VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 6 2 1 10 30 MHz mA A 7 10 MIN TYP. MAX 8.0 1.5 UNIT V V V A SYMBOL VCEsat VBEsat V(BR)EBO Switching times tstg tf Storage time IC=5A; IB1=1A IB2=-2A; VCC=200V Fall time 0.2 s 1.5 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1739 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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