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| Low Capacitance ESD Protection Array SMD Diodes Specialist CSRS065V0P Features (RoHS Device) ESD Protect for 4 high-speed I/O channels. IEC61000-4-2 (ESD)14kV(Contact),18kV(Air). IEC61000-4-4 (FET)20A for I/O,80A for Power. Working voltage: 5V Low capacitance:1.3pF(Typ.). High component density. 0.067(1.70) 0.059(1.50) 0.119(3.02) 0.111(2.82) SOT-23-6 Mechanical data Case: SOT-23-6 standard package, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750,method 2026. Mounting position: Any Weight: 0.015 gram (approx.). 0.020(0.50) 0.012(0.30) 5 0.004(0.10)max 0.012(0.30)min 0.079(2.00) 0.071(1.80) 0.008(0.20) 0.004(0.10) 0.045(1.15) 0.041(1.05) 0.116(2.95) 0.104(2.65) Circuit Diagram 1 3 4 6 Dimensions in inches and (millimeter) 2 Pin Configuration 6 5 4 1 2 3 Maximum Rating (at TA=25C unless otherwise noted) Parameter Peak pulse current ( tp = 8/20 us) Operating supply voltage ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2(Contact) ESD per IEC 61000-4-2(Air)(VDD-GND) ESD per IEC 61000-4-2(Contact)(VDD-GND) Lead soldering temperature Operating temperature Storage temperature DC voltage at any I/O pin Symbol IPP VDC ESD ESD_VDD TSOL Tj TSTG VIO Value 6.5 6 18 14 30 260 ( 10 sec) -55 to +85 -55 to +125 (GND -0.5) to (VDD +0.5) Unit A V kV kV C C C V REV:C QW-BP018 Page 1 Comchip Technology CO., LTD. Low Capacitance ESD Protection Array SMD Diodes Specialist Electrical Characteristics (at TA=25C unless otherwise noted) Parameter Reverse stand-Off voltage Reverse leakage current VPIN 5 = 5 V, VPIN 2 =0V ,VIO = 0~5V Diode breakdown voltage Forward voltage IR = 1 mA, Pin 5 to Pin 2 IF = 15 mA, Pin 2 to Pin 5 IPP = 5 A, tp=8/20us, Any Channel Pin to Ground Clamping voltage IEC 61000-4-2 +6kV,Contact mode Any Channel Pin to Ground IEC 61000-4-2 +6kV,Contact moed VDD Pin to Ground Vpin5 = 5V,Vpin2= 0V, VIO=2.5V, f = 1MHz,Any Channel Pin to Ground Vpin5 = 5V,Vpin2= 0V, VIO=2.5V f = 1MHz,Between Channel Pins Vpin5 = 5V,Vpin2= 0V, VIN=2.5V f = 1MHz,Channel_x pin to ground channel_y pin to ground VC VBD VF 6 0.8 8.1 Conditions Pin 5 to Pin 2 VRWM = 5 V, Pin 5 to Pin 2 Symbol Min Typ Max Unit VRWM IR 1 9 1 9 V V 5 5 uA V 12.5 V 9 1.3 1.6 Junction capacitance Cj 0.12 0.14 pF 0.05 0.07 REV:C QW-BP018 Page 2 Comchip Technology CO., LTD. Low Capacitance ESD Protection Array SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CSRS065V0P) Fig. 1 - Power derating curve 110 100 12 11 10 Fig. 2 - Clamping voltage vs. Peak pulse current % of Rated power or IPP 90 Clamping voltage ( V ) 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 9 8 7 6 5 4 3 2 1 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 I/O pin to GND PIN Waveform Parameters: tr=8us td=20us Ambient temperature (C) Peak pulse current (A) Fig.3 - Forward voltage v.s. forward current 4.0 3.5 Fig.4 - Typical variation of CIN v.s. VIN 2.0 1.8 1.6 Input capacitance(pF) 3.0 Forward voltage (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VDD =5V,GND =0V,f =1MHz,TA=25C 2.5 2.0 1.5 1.0 0.5 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 I/O pin to GND PIN Waveform Parameters: tr=8us td=20us 0 1 2 3 4 5 Peak pulse current(A) Input voltage (V) Fig. 5 - Typical variation of CIN v.s. temperature Transmission line pulsing(TLP)current(A) 1.50 1.45 1.40 18 16 14 12 10 8 6 4 2 0 Fig. 6 - Transmission line pulsing (TLP) measurement Transmission line pulsing(TLP)current(A) 18 16 14 Fig.7 -Transmission line pulsing (TLP) measurement Input capacitance(pF) V_pulse Pulse from a transmission line TLP_I V_pulse 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 20 40 60 80 100 120 VDD =5V,GND =0V,VIN =2.5V f=1MHz 12 10 8 6 4 2 0 0 Pulse from a transmission line TLP_I 100ns + TLP_V DUT 100ns + TLP_V DUT I/O to GND VDD to GND 0 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 9 10 Temperature (C) Transmission line pulsing(TLP)voltage(V) Transmission line pulsing(TLP)voltage(V) REV:C QW-BP018 Page 3 Comchip Technology CO., LTD. Low Capacitance ESD Protection Array SMD Diodes Specialist Reel Taping Specification P0 P1 d Index hole E T F B P A W C 12 0 o D2 D1 D W1 Trailer ....... ....... 10 pitches (min) Device ....... ....... ....... ....... Leader ....... ....... 10 pitches (min) End Start Direction of Feed SYMBOL A 3.17 0.10 0.124 0.004 B 3.23 0.10 0.127 0.004 C 1.37 0.10 0.054 0.004 d 1.55 0.10 0.061 0.004 D 178 1 7.008 0.040 D1 50.0 MIN. 1.969 MIN. D2 13.0 0.20 0.512 0.008 SOT-23-6 (mm) (inch) SYMBOL E 1.75 0.10 0.069 0.004 F 3.50 0.05 0.138 0.002 P 4.00 0.10 0.157 0.004 P0 4.00 0.10 0.157 0.004 P1 2.00 0.05 0.079 0.002 W 8.00 0.30 0.315 0.012 W1 14.4 MAX. 0.567 MAX SOT-23-6 (mm) (inch) REV:C QW-BP018 Page 4 Comchip Technology CO., LTD. Low Capacitance ESD Protection Array SMD Diodes Specialist Marking Code 6 5 4 Part Number CSRS065V0P Marking Code C05 . 1 C05 2 3 Suggested PAD Layout C SOT-23-6 SIZE (mm) A B C D E 1.10 0.60 0.95 2.50 3.60 (inch) 0.043 D E A 0.024 0.037 0.098 0.142 B Standard Package Qty per Reel Case Type (Pcs) SOT-23-6 3000 Reel Size (inch) 7 REV:C QW-BP018 Page 5 Comchip Technology CO., LTD. |
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