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| Evaluation board available. NX2154/2154A 300kHz SYNCHRONOUS PWM CONTROLLER PRELIMINARY DATA SHEET Pb Free Product DESCRIPTION The NX2154/2154A controller IC is a synchronous Buck controller IC designed for step down DC to DC converter applications. It is optimized to convert bus voltages from 2V to 40V to outputs as low as 0.8V voltage. The NX2154/2154A operates at fixed 300kHz. The NX2154/2154A employs fixed loss-less current limiting by sensing the Rdson of synchronous MOSFET followed by hiccup feature.NX2154A has higher current limit threshold than NX2154. Feedback under voltage also triggers hiccup. Other features of the device are: 5V gate drive, Adaptive deadband control, Internal digital soft start, Vcc undervoltage lock out and shutdown capability via the comp pin. FEATURES n n n n n n Bus voltage operation from 2V to 40V Fixed 300kHz voltage mode controller Internal Digital Soft Start Function Prebias Startup Less than 50 nS adaptive deadband Current limit triggers hiccup by sensing Rdson of Synchronous MOSFET n No negative spike at Vout during startup and shutdown n Pb-free and RoHS compliant APPLICATIONS n n n n n Graphic Card on board converters Memory Vddq Supply in mother board applications On board DC to DC such as 5V to 3.3V, 2.5V or 1.8V Hard Disk Drive Set Top Box TYPICAL APPLICATION Vin +5V MBR0530T1 1uF 50ME180WX Vin +33V 1uF 5 1 Vcc 7 BST 0.1uF 2 M1A STM6920 15uH HI=SD M3 12nF 82pF 13.3k 6 NX2154 Comp Hdrv SW Ldrv 8 M1B Vout +5V,3A 6ME1000WG(1000uF,30mohm) Fb Gnd 3 4 1k 191 Figure1 - Typical application of 2154 ORDERING INFORMATION Device NX2154CSTR NX2154ACSTR Rev.1.2 02/26/07 Temperature 0 to 70oC 0 to 70o C Package SOIC-8L SOIC-8L Frequency 300kHz 300kHz OCP Threshold 360mV 540mV Pb-Free Yes Yes 1 NX2154/2154A ABSOLUTE MAXIMUM RATINGS(NOTE1) Vcc to GND & BST to SW voltage ................... 6.5V BST to GND Voltage ...................................... 50V Storage Temperature Range ............................. -65oC to 150oC Operating Junction Temperature Range ............. -40oC to 125oC NOTE1: Stresses above those listed in "ABSOLUTE MAXIMUM RATINGS", may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. PACKAGE INFORMATION 8-PIN PLASTIC SOIC (S) JA 130o C/W BST 1 HDrv 2 Gnd 3 LDrv 4 8 SW 7 Comp 6 Fb 5 Vcc ELECTRICAL SPECIFICATIONS Unless otherwise specified, these specifications apply over Vcc = 5V, and TA = 0 to 70oC. Typical values refer to TA = 25oC. Low duty cycle pulse testing is used which keeps junction and case temperatures equal to the ambient temperature. PARAMETER Reference Voltage Ref Voltage Ref Voltage line regulation Supply Voltage(Vcc) VCC Voltage Range VCC Supply Current (Static) VCC Supply Current (Dynamic) Supply Voltage(VBST) VBST Supply Current (Static) VBST Supply Current (Dynamic) Under Voltage Lockout VCC-Threshold VCC-Hysteresis SYM VREF Test Condition 4.5V 0.15 5 mA mA 4.2 0.22 V V Rev.1.2 02/26/07 2 NX2154/2154A PARAMETER SS Soft Start time Oscillator (Rt) Frequency Ramp-Amplitude Voltage Max Duty Cycle Min Duty Cycle Error Amplifiers Transconductance Input Bias Current Comp SD Threshold FBUVLO Feedback UVLO threshold High Side Driver(C L=2200pF) Output Impedance , Sourcing Output Impedance , Sinking Sourcing Current Sinking Current Rise Time Fall Time Deadband Time Low Side Driver (C L=2200pF) Output Impedance, Sourcing Current Output Impedance, Sinking Current Sourcing Current Sinking Current Rise Time Fall Time Deadband Time OCP OCP voltage Rsource(Ldrv) Rsink(Ldrv) Isource(Ldrv) Isink(Ldrv) TLdrv(Rise) TLdrv(Fall) Tdead(H to SW going Low to Ldrv L) going High, 10% to 10% NX2154 NX2154A I=200mA I=200mA 1.9 1 1 2 13 12 10 ohm ohm A A ns ns ns SYM Tss FS VRAMP Test Condition Fsw=300Khz Min TYP 3.4 1.7 300 1.6 84 0 2000 10 0.3 percent of nominal Rsource(Hdrv) I=200mA Rsink(Hdrv) I=200mA Isource(Hdrv) Isink(Hdrv) THdrv(Rise) THdrv(Fall) Tdead(L to Ldrv going Low to Hdrv H) going High, 10%-10% 65 70 1.9 1.7 1 1.2 14 17 30 75 MAX Units mS kHz V % % umho nA V % ohm ohm A A ns ns ns Ib 360 540 mV Rev.1.2 02/26/07 3 NX2154/2154A PIN DESCRIPTIONS PIN # 1 PIN SYMBOL BST PIN DESCRIPTION This pin supplies voltage to the high side driver. A high frequency ceramic capacitor of 0.1 to 1 uF must be connected from this pin to SW pin. High side MOSFET gate driver. Ground pin. Low side MOSFET gate driver. For the high current application, a 4.7nF capacitor is recommend to placed on low side MOSFET's gate to ground. This is to prevent undesired Cdv/dt induced low side MOSFET's turn on to happen, which is caused by fast voltage change on the drain of low side MOSFET in synchronous buck converter and lower the system efficiency. Voltage supply for the internal circuit as well as the low side MOSFET gate driver. A 1uF high frequency ceramic capacitor must be connected from this pin to GND pin. This pin is the error amplifier inverting input. This pin is also connected to the output UVLO comparator. When this pin falls below 0.56V, both HDRV and LDRV outputs are in hiccup. This pin is the output of the error amplifier and together with FB pin is used to compensate the voltage control feedback loop. This pin is also used as a shut down pin. When this pin is pulled below 0.3V, both drivers are turned off and internal soft start is reset. This pin is connected to the source of the high side MOSFET and provides return path for the high side driver. Also SW senses the low side MOSFETS current, when the pin voltage is lower than 360mV for NX2154, 540mV for NX2154A, hiccup will be triggered. 2 3 4 HDRV GND LDRV 5 Vcc 6 FB 7 COMP 8 SW Rev.1.2 02/26/07 4 NX2154/2154A BLOCK DIAGRAM VCC 70%Vp FB Bias Generator 1.25V 0.8V UVLO POR START Hiccup Logic OC BST HDRV COMP 0.3V START 0.8V OSC Digital start Up ramp S R FB 0.6V CLAMP COMP START GND Q PWM OC Control Logic VCC SW LDRV 1.3V CLAMP Hiccup Logic 360mV/540mV OCP comparator Figure 2 - Simplified block diagram of the NX2154/NX2154A Rev.1.2 02/26/07 5 NX2154/2154A APPLICATION INFORMATION Symbol Used In Application Information: VIN VOUT IOUT FS - Input voltage - Output voltage - Output current - Working frequency IRIPPLE = = VIN -VOUT VOUT 1 x x L OUT VIN FS ...(2) 33V-5V 5V 1 x x = 0.94A 15uH 33V 300kHz DVRIPPLE - Output voltage ripple DIRIPPLE - Inductor current ripple Output Capacitor Selection Output capacitor is basically decided by the amount of the output voltage ripple allowed during steady state(DC) load condition as well as specification for the load transient. The optimum design may require a couple of iterations to satisfy both condition. Based on DC Load Condition The amount of voltage ripple during the DC load condition is determined by equation(3). Design Example The following is typical application for NX2154, the schematic is figure 1. VIN = 33V VOUT=5V FS=300kHz IOUT=3A DVRIPPLE <=50mV DVDROOP<=250mV @ 9A step VRIPPLE = ESR x IRIPPLE + IRIPPLE 8 x FS x COUT ...(3) Where ESR is the output capacitors' equivalent series resistance,COUT is the value of output capacitors. Typically when large value capacitors are selected such as Aluminum Electrolytic,POSCAP and OSCON types are used, the amount of the output voltage ripple is dominated by the first term in equation(3) and the second term can be neglected. For this example,electrolytic capacitors are chosen as output capacitors, the ESR and inductor current typically determines the output voltage ripple. Output Inductor Selection The selection of inductor value is based on inductor ripple current, power rating, working frequency and efficiency. Larger inductor value normally means smaller ripple current. However if the inductance is chosen too large, it brings slow response and lower efficiency. Usually the ripple current ranges from 20% to 40% of the output current. This is a design freedom which can be decided by design engineer according to various application requirements. The inductor value can be calculated by using the following equations: ESR desire = VRIPPLE 50mV = = 53m IRIPPLE 0.94A ...(4) If low ESR is required, for most applications, multiple capacitors in parallel are better than a big capacitor. For example, SANYO electrolytic capacitor 6ME1000WG (1000uF,30m) is chosen. L OUT = VIN -VOUT VOUT 1 x x IRIPPLE VIN FS IRIPPLE =k x IOUTPUT where k is between 0.2 to 0.4. Select k=0.3, then ...(1) N= E S R E x IR I P P L E VR IPPLE ...(5) Number of Capacitor is calculated as N= 30mx 0.94A 50mV 33V-5V 5V 1 x x 0.3 x 3A 33V 300kHz L OUT =15.7uH L OUT = Choose inductor from COILCRAFT DO5022P-153 with L=15uH is a good choice. Current Ripple is recalculated as Rev.1.2 02/26/07 N =0.566 The number of capacitor has to be round up to a integer. Choose N =1. If ceramic capacitors are chosen as output ca 6 NX2154/2154A pacitors, both terms in equation (3) need to be evaluated to determine the overall ripple. Usually when this type of capacitors are selected, the amount of capacitance per single unit is not sufficient to meet the transient specification, which results in parallel configuration of multiple capacitors . For example, one 100uF, X5R ceramic capacitor of output capacitor. For low frequency capacitor such as electrolytic capacitor, the product of ESR and capacitance is high and L L crit is true. In that case, the transient spec is dependent on the ESR of capacitor. In most cases, the output capacitors are multiple capacitors in parallel. The number of capacitors can be calculated by the following N= ESR E x Istep Vtran + VOUT x 2 2 x L x C E x Vtran with 2m ESR is used. The amount of output ripple is VRIPPLE 0.94A = 2mx 0.94A + 8 x 300kHz x 100uF = 5.4mV ...(9) where Although this meets DC ripple spec, however it needs to be studied for transient requirement. Based On Transient Requirement Typically, the output voltage droop during transient is specified as: 0 if L L crit = L x Istep - ESR E x CE V OUT sient is 250mV for 3A load step. if L L crit ...(10) For example, assume voltage droop during tranIf the SANYO electrolytic capaictor 6ME1000WG (1000uF, 30m ) is used, the critical inductance is given as VDROOP L crit = ESR E x C E x VOUT = I step 30m x 1000F x 5V = 50H 3A The selected inductor is 15uH which is smaller than critical inductance. In that case, the output voltage transient only dependent on the ESR. number of capacitors is where is the a function of capacitor, etc. N= ...(7) ESR E x Istep Vtran + 0 if L L crit = L x Istep - ESR x COUT V OUT where L crit = VOUT x 2 2 x L x CE x Vtran if L L crit ESR x COUT x VOUT ESR E x C E x VOUT = Istep Istep 30m x 3A + 250mV 5V x (0) 2 2 x15H x1000F x 250mV = 0.36 = The number of capacitors has to satisfied both ripple and transient requirement. Overall, we can choose N=1. ...(8) where ESRE and CE represents ESR and capacitance of each capacitor if multiple capacitors are used in parallel. The above equation shows that if the selected output inductor is smaller than the critical inductance, the voltage droop or overshoot is only dependent on the ESR Rev.1.2 02/26/07 7 NX2154/2154A It should be considered that the proposed equation is based on ideal case, in reality, the droop or overshoot is typically more than the calculation. The equation gives a good start. For more margin, more capacitors have to be chosen after the test. Typically, for high frequency capacitor such as high quality POSCAP especially ceramic capacitor, 20% to 100% (for ceramic) more capacitors have to be chosen since the ESR of capacitors is so low that the PCB parasitic can affect the results tremendously. More capacitors have to be selected to compensate these parasitic parameters. where FZ1,FZ2,FP1 and FP2 are poles and zeros in FZ1 = FZ2 = FP1 = FP2 = 1 2 x x R 4 x C2 1 2 x x (R 2 + R3 ) x C3 1 2 x x R3 x C3 1 C x C2 2 x x R4 x 1 C1 + C2 ...(11) ...(12) ...(13) ...(14) Compensator Design Due to the double pole generated by LC filter of the power stage, the power system has 180o phase shift , and therefore, is unstable by itself. In order to achieve accurate output voltage and fast transient response,compensator is employed to provide highest possible bandwidth and enough phase margin.Ideally,the Bode plot of the closed loop system has crossover frequency between1/10 and 1/5 of the switching frequency, phase margin greater than 50o and the gain crossing 0dB with -20dB/decade. Power stage output capacitors usually decide the compensator type. If electrolytic capacitors are chosen as output capacitors, type II compensator can be used to compensate the system, because the zero caused by output capacitor ESR is lower than crossover frequency. Otherwise type III compensator should be chosen. the compensator. Their locations are shown in figure 4. The transfer function of type III compensator for transconductance amplifier is given by: Ve 1 - gm x Z f = VOUT 1 + gm x Zin + Z in / R1 For the voltage amplifier, the transfer function of compensator is Ve -Z f = VOUT Zin To achieve the same effect as voltage amplifier, the compensator of transconductance amplifier must satisfy this condition: R 4>>2/gm. And it would be desirable if R 1||R2||R3>>1/gm can be met at the same time. Zin R3 Vout Zf C1 C2 Fb gm Ve R4 A. Type III compensator design For low ESR output capacitors, typically such as Sanyo oscap and poscap, the frequency of ESR zero caused by output capacitors is higher than the crossover frequency. In this case, it is necessary to compensate the system with type III compensator. The following figures and equations show how to realize the type III compensator by transconductance amplifier. R2 C3 R1 Vref Figure 3 - Type III compensator using transconductance amplifier Rev.1.2 02/26/07 8 NX2154/2154A Case 1: FLC R2 x VREF 10kx 0.8V = = 1.91k VOUT -VREF 5V-0.8V Gain(db) power stage FLC 40dB/decade Choose R1=1.91k. 3. Set zero FZ2 = FLC and Fp1 =FESR . 4. Calculate C3 . C3 = 1 11 x( ) 2 x x R2 Fz2 Fp1 FESR loop gain 1 1 1 x( ) 2 x x 10k 1.3kHz 5.3kHz =9.2nF = 20dB/decade compensator Choose C3=10nF. 5. Calculate R3 . R3 = = 1 2 x x FP1 x C 3 1 2 x x 5.3kHz x 10nF = 3k FZ1 FZ2 FP1 FO FP2 Choose R3 =3k. 6. Calculate R4 with FO=30kHz. R4 = VOSC 2 x x FO x L R2 x R3 x x Vin ESR R2 + R3 Figure 4 - Bode plot of Type III compensator (FLC C2 = = 1 2 x x FZ1 x R 4 1 2 x x 0.75 x 1.3kHz x 10k = 12.2nF FLC = = 1 2 x x L OUT x COUT 1 Choose C2=12nF. 8. Calculate C 1 by equation (14) with pole F p2 at half the switching frequency. 2 x x 15uH x 1000uF = 1.3kHz C1 = = 1 2 x x R 4 x FP2 FESR = = 1 2 x x ESR x COUT 1 2 x x 30m x 1000uF = 5.3kHz Rev.1.2 02/26/07 1 2 x x 10k x 150kHz = 106pF Choose C1=100pF. 9 NX2154/2154A Case 2: FLC R 2 x VREF 10k x 0.8V = = 8k VOUT -VREF 1.8V-0.8V Choose R1=8k. Gain(db) power stage 3. Set zero FZ2 = FLC and Fp1 =FESR . 4. Calculate R4 and C3 with the crossover FLC 40dB/decade frequency at 1/10~ 1/5 of the switching frequency. Set FO=30kHz. C3 = loop gain 1 11 x( ) 2 x x R2 Fz2 Fp1 FESR 20dB/decade compensator 1 1 1 x( ) 2 x x 10k 6.2kHz 60.3kHz =2.3nF = R4 = = VOSC 2 x x FO x L x x Cout Vin C3 1.5V 2 x x 30kHz x 1.5uH x x 440uF 5V 2.2nF =16.9k FZ1 FZ2 FO FP1 FP2 Choose C3=2.2nF, R 4=16.9k. 5. Calculate C2 with zero Fz1 at 75% of the LC double pole by equation (11). Figure 5 - Bode plot of Type III compensator C2 = Design example for type III compensator are in order. The crossover frequency has to be selected as FLC = 1 2 x x 0.75 x 6.2kHz x 16.9k = 2nF Choose C2=2.2nF. 6. Calculate C 1 by equation (14) with pole F p2 at half the switching frequency. C1 = = 1 2 x x R 4 x FP2 FLC = = 1 2 x x L OUT x COUT 1 1 2 x x 16.9k x 150kHz = 63pF Choose C1=68pF. 7. Calculate R 3 by equation (13). 2 x x 1.5uH x 440uF = 6.2kHz FESR 1 = 2 x x ESR x C OUT 1 = 2 x x 6m x 440uF = 60.3kHz R3 = = 1 2 x x FP1 x C3 1 2 x x 60.3kHz x 2.2nF = 1.2k Choose R3=1.2k. 10 2. Set R2 equal to 10k. Rev.1.2 02/26/07 NX2154/2154A B. Type II compensator design If the electrolytic capacitors are chosen as power stage output capacitors, usually the Type II compensator can be used to compensate the system. Type II compensator can be realized by simple RC circuit without feedback as shown in figure 6. R3 and C1 introduce a zero to cancel the double pole effect. C2 introduces a pole to suppress the switching noise. The following equations show the compensator pole zero location and constant gain. Vout R2 Fb gm R1 Vref Ve R3 C2 C1 Gain=gm x R1 x R3 R1+R2 ... (15) Figure 7 - Type II compensator with 1 Fz = 2 x x R3 x C1 Fp 1 2 x x R3 x C2 ... (16) ... (17) transconductance amplifier For this type of compensator, FO has to satisfy FLC with 30m electrolytic capacitors. 1.Calculate the location of LC double pole F LC and ESR zero FESR. FLC = = 1 2 x x L OUT x COUT 1 2 x x 15uH x 1000uF = 1.3kHz compensator Gain FESR = = 1 2 x x ESR x COUT FZ FLC FESR FO FP R1 = 1 2 x x 30m x 1000uF = 5.3kHz 2.Set R2 equal to 1k. Figure 6 - Bode plot of Type II compensator R 2 x VREF 1k x 0.8V = = 191 VOUT -VREF 5V-0.8V Choose R1=191. 3. Set crossover frequency at 1/10~ 1/5 of the swithing frequency, here FO=30kHz. 4.Calculate R3 value by the following equation. Rev.1.2 02/26/07 11 NX2154/2154A 4.Calculate R3 value by the following equation. V 2 x x FO x L 1 VOUT x x R3 = OSC x Vin RESR gm VREF 1.5V 2 x x 30kHz x 15uH 1 x x 33V 30m 2.0mA/V 5V x 0.8V =13.3k = Choose R 3 =13.3k. 5. Calculate C1 by setting compensator zero FZ at 75% of the LC double pole. C1= = 1 2 x x R 3 x Fz Vout R2 Fb R1 Vref Voltage divider Figure 8 - Voltage divider Input Capacitor Selection Input capacitors are usually a mix of high frequency ceramic capacitors and bulk capacitors. Ceramic capacitors bypass the high frequency noise, and bulk capacitors supply switching current to the MOSFETs. Usually 1uF ceramic capacitor is chosen to decouple the high frequency noise.The bulk input capacitors are decided by voltage rating and RMS current rating. The RMS current in the input capacitors can be calculated as: 1 2 x x 13.3k x 0.75 x 1.3kHz =12.2nF Choose C1=12nF. 6. Calculate C 2 by setting compensator pole Fp at half the swithing frequency. C2= = 1 x R 3 x Fs IRMS = IOUT x D x 1- D D= VOUT VIN ...(19) 1 x 1 3 .3k x 3 0 0 k H z =80pF VIN = 33V, VOUT=5V, IOUT=3A, using equation (19), the result of input RMS current is 1.1A. For higher efficiency, low ESR capacitors are recommended. One Sanyo electrolytic capacitor 50ME180WX 50V 180uF 46m with 1.19A RMS rating is chosen as input bulk capacitors. Choose C1=82pF. Output Voltage Calculation Output voltage is set by reference voltage and external voltage divider. The reference voltage is fixed at 0.8V. The divider consists of two ratioed resistors so that the output voltage applied at the Fb pin is 0.8V when the output voltage is at the desired value. The following equation and picture show the relationship between Power MOSFETs Selection The power stage requires two N-Channel power MOSFETs. The selection of MOSFETs is based on maximum drain source voltage, gate source voltage, maximum current rating, MOSFET on resistance and power dissipation. The main consideration is the power loss contribution of MOSFETs to the overall converter efficiency. In this design example, two STM6920 are used. They have the following parameters: V DS=40V, I D =7A,RDSON =45m,QGATE =8.7nC. There are two factors causing the MOSFET power loss:conduction loss, switching loss. VOUT , VREF and voltage divider. . ...(18) R 2 x VR E F R 1= V O U T -V R E F where R2 is part of the compensator, and the value of R1 value can be set by voltage divider. See compensator design for R1 and R2 selection. Rev.1.2 02/26/07 12 NX2154/2154A Conduction loss is simply defined as: PHCON =IOUT 2 x D x RDS(ON) x K PLCON =IOUT 2 x (1 - D) x RDS(ON) x K PTOTAL =PHCON + PLCON ...(20) ISET = 360mV K x RDSON If MOSFET R DSON=45m, the worst case thermal consideration K=1.5, then ISET = 320mV 360mV = = 5.3A K x RDSON 1.5 x 45m where the RDS(ON) will increases as MOSFET junction temperature increases, K is RDS(ON) temperature dependency. As a result, RDS(ON) should be selected for the worst case, in which K approximately equals to 1.5 at 125oC according to STM6920 datasheet. Conduction loss should not exceed package rating or overall system thermal budget. Switching loss is mainly caused by crossover conduction at the switching transition. The total switching loss can be approximated. Layout Considerations The layout is very important when designing high frequency switching converters. Layout will affect noise pickup and can cause a good design to perform with less than expected results. There are two sets of components considered in the layout which are power components and small signal components. Power components usually consist of input capacitors, high-side MOSFET, low-side MOSFET, inductor and output capacitors. A noisy environment is generated by the power components due to the switching power. Small signal components are connected to sensitive pins or nodes. A multilayer layout which includes power plane, ground plane and signal plane is recommended . Layout guidelines: 1. First put all the power components in the top layer connected by wide, copper filled areas. The input capacitor, inductor, output capacitor and the MOSFETs should be close to each other as possible. This helps to reduce the EMI radiated by the power loop due to the high switching currents through them. 2. Low ESR capacitor which can handle input RMS ripple current and a high frequency decoupling ceramic cap which usually is 1uF need to be practically touching the drain pin of the upper MOSFET, a plane connection is a must. 3. The output capacitors should be placed as close as to the load as possible and plane connection is required. 4. Drain of the low-side MOSFET and source of the high-side MOSFET need to be connected thru a plane ans as close as possible. A snubber nedds to be placed as close to this junction as possible. 5. Source of the lower MOSFET needs to be con13 1 PSW = x VIN x IOUT x TSW x FS ...(21) 2 where IOUT is output current, TSW is the sum of TR and TF which can be found in mosfet datasheet, and FS is switching frequency. Switching loss PSW is frequency dependent. Also MOSFET gate driver loss should be considered when choosing the proper power MOSFET. MOSFET gate driver loss is the loss generated by discharging the gate capacitor and is dissipated in driver circuits.It is proportional to frequency and is defined as: Pgate = (QHGATE x VHGS + QLGATE x VLGS ) x FS ...(22) where QHGATE is the high side MOSFETs gate charge,QLGATE is the low side MOSFETs gate charge,VHGS is the high side gate source voltage, and VLGS is the low side gate source voltage. This power dissipation should not exceed maximum power dissipation of the driver device. Over Current Limit Protection Over current Limit for step down converter is achieved by sensing current through the low side MOSFET. For NX2154, the current limit is decided by the RDSON of the low side mosfet. When synchronous FET is on, and the voltage on SW pin is below 360mV, the over current occurs. The over current limit can be calculated by the following equation. Rev.1.2 02/26/07 NX2154/2154A nected to the GND plane with multiple vias. One is not enough. This is very important. The same applies to the output capacitors and input capacitors. 6. Hdrv and Ldrv pins should be as close to MOSFET gate as possible. The gate traces should be wide and short. A place for gate drv resistors is needed to fine tune noise if needed. 7. Vcc capacitor, BST capacitor or any other bypassing capacitor needs to be placed first around the IC and as close as possible. The capacitor on comp to GND or comp back to FB needs to be place as close to the pin as well as resistor divider. 8. The output sense line which is sensing output back to the resistor divider should not go through high frequency signals. 9. All GNDs need to go directly thru via to GND plane. 10. The feedback part of the system should be kept away from the inductor and other noise sources, and be placed close to the IC. 11. In multilayer PCB, separate power ground and analog ground. These two grounds must be connected together on the PC board layout at a single point. The goal is to localize the high current path to a separate loop that does not interfere with the more sensitive analog control function. TYPICAL APPLICATION FOR HIGH CURRENT Vin +12V C3 33uF L2 1uH C5 1uF Cin 2 x 16SP180M D1 MBR0530T1 Vin +5V C6 1uF 7 5 1 Vcc HI=SD M3 BST C4 0.1uF 2 M1 IRF3706 L1 1uH C1 220pF C2 15nF R4 5k 6 NX2154 Comp Hdrv SW Ldrv 8 M2 2 x IRF3706 Fb Gnd 3 4 C7 4.7nF Co 2 x (1500uF,13mohm) Vout +1.8V,20A R2 800 R1 1k Figure 9 - High output current application of 2154 Rev.1.2 02/26/07 14 NX2154/2154A TYPICAL APPLICATION FOR LED +5V Vin +9V to 33V D1 MBR0530T1 10k 1uF 5 1uF 1N4148 7 68nF 56pF 1 1uF 0.1uF 2 IRF7341 10uH 8 220uF 78L05 Vcc Comp BST Hdrv SW Vout Co 1000uF,30mohm Fb POT 100k 1k Waveforms for LED application 0.9 0.85 EFFICIENCY(%) 0.8 0.75 0.7 0.65 0.6 0.55 0 0.2 0.4 0.6 0.8 1 1.2 LED CURRENT(A) Figure 11 - LED application efficiency (One LUXEDN III star LED, VIN=12V) Rev.1.2 02/26/07 NX2154 Gnd 3 1.6k 6 Ldrv 4 LUXEON III star LED LM358 0.1ohm Figure 10 - NX2154 LED application Figure 12 - Startup in NX2154 LED application 15 NX2154/2154A SOIC8 PACKAGE OUTLINE DIMENSIONS Rev.1.2 02/26/07 16 NX2154/2154A Rev.1.2 02/26/07 17 |
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