![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
TCND5000 Vishay Semiconductors Reflective Optical Sensor with PIN Photodiode Output Description The TCND5000 is a reflective sensor that includes an infrared emitter and PIN photodiode in a surface mount package which blocks visible light. A Top view A Features * Package type: Surface mount * Detector type: PIN Photodiode * Dimensions: e3 L 6 mm x W 4.3 mm x H 3.75 mm * Peak operating distance: 6 mm * Peak operating range: 2 mm to 25 mm * Typical output current under test: Ira > 0.11 A * Daylight blocking filter * High linearity * Emitter wavelength 940 nm * Lead (Pb)-free soldering released * Lead (Pb)-free component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * Minimum order quantity 2000 pcs, 2000 pcs/reel 19967 Detector Emitter C Marking area C Applications * * * * Proximity sensor Object sensor Motion sensor Touch key Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Input (Emitter) Parameter Reverse Voltage Forward current Peak Forward Current Power Dissipation Junction Temperature tp = 50 s, T = 2 ms, Tamb = 25 C Test condition Symbol VR IF IFM PV Tj Value 5 100 500 190 100 Unit V mA mA mW C Output (Detector) Parameter Reverse Voltage Power Dissipation Junction Temperature Test condition Symbol VR PV Tj Value 60 75 100 Unit V mW C Document Number 83795 Rev. 1.2, 04-Sep-06 www.vishay.com 1 TCND5000 Vishay Semiconductors Sensor Parameter Operating Temperature Range Storage Temperature Range Soldering Temperature acc. fig. 14 Test condition Symbol Tamb Tstg Tsd Value - 40 to + 85 - 40 to + 100 260 Unit C C C 120 100 IF - Forward Current (mA) 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 16188 Tamb - Ambient Temperature (C) Figure 1. Forward Current Limit vs. Ambient Temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Input (Emitter) Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time Virtual Source Diameter see figures 2 to 8 accordingly IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Method: 63 % encircled energy Test condition IF = 20 mA, tp = 20 ms IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA, tp = 20 ms Symbol VF TKVF IR Cj Ie p TKp tr tf O 930 25 7 12 940 50 0.2 800 800 1.2 75 Min Typ. 1.2 - 1.3 10 Max 1.5 Unit V mV/K A pF mW/sr deg nm nm nm/K ns ns mm www.vishay.com 2 Document Number 83795 Rev. 1.2, 04-Sep-06 TCND5000 Vishay Semiconductors Output (Detector) Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode capacitance Reverse Light Current Temp. Coefficient of Ira Angle of Half Intensity Wavelength of Peak Sensitivity Range of Spectral Bandwidth see figures 9 to 12 accordingly Test condition IF = 50 mA IR = 100 A VR = 10 V, E = 0 VR = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm = 950 nm, VR = 5 V VR = 5 V, = 870 nm 2 Symbol VF VBR Iro CD Ira TKira p 0.5 Min 60 Typ. 1.0 1 1.8 12 0.2 15 930 840 to 1050 Max 1.3 10 Unit V V nA pF A %/K deg nm nm Sensor Tamb = 25 C, unless otherwise specified Parameter Reverse Light Current Test condition VR = 2.5 V, IF = 20 mA D = 30 mm reflective mode: see figure 2 Symbol Ira Min 110 Typ. Max Unit nA 30 mm Kodak grey card 20 % Reflectivity D = 30 mm 18223 Figure 2. Test Circuit Document Number 83795 Rev. 1.2, 04-Sep-06 d = 26.25 mm www.vishay.com 3 TCND5000 Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified 104 0 10 20 30 IF - Forward Current (mA) 103 Ie rel - Relative Intensity 40 1.0 0.9 0.8 0.7 50 60 70 80 102 tP = 100 s tP/T = 0.001 101 100 0 13600 1 2 3 4 18234 0.6 0.4 0.2 0 0.2 0.4 0.6 VF - Forward Voltage (V) Figure 3. Forward Current vs. Forward Voltage Figure 6. Relative Radiant Intensity vs. Angular Displacement 1000 1000 Ie - Radiant Intensity (mW/sr) 100 Iro - Reverse Dark Current (nA) 100 10 10 VR = 10 V 1 1 0.1 100 16189 101 102 103 104 94 8427 20 40 60 80 100 IF - Forward Current (mA) Tamb - Ambient Temperature (C) Figure 4. Radiant Intensity vs. Forward Current Figure 7. Reverse Dark Current vs. Ambient Temperature 1.0 Ira, rel - Relative Reverse Light Current 1.25 1.4 rel - Relative Radiant Power e 1.2 VR = 5 V = 950 nm 0.75 1.0 0.5 0.8 0.25 IF = 100 mA 0 890 940 990 0.6 0 20 40 60 80 100 14291 - Wavelength (nm) 94 8416 Tamb - Ambient Temperature (C) Figure 5. Relative Radiant Power vs. Wavelength Figure 8. Relative Reverse Light Current vs. Ambient Temperature www.vishay.com 4 Document Number 83795 Rev. 1.2, 04-Sep-06 TCND5000 Vishay Semiconductors 100 0 10 20 30 Ira - Reverse Light Current (A) Srel - Relative Sensitivity 10 40 1.0 0.9 0.8 0.7 50 60 70 80 1.0 VCE = 5 V = 950 nm 0.1 0.01 16055 0.1 1 10 94 8248 0.6 0.4 0.2 0 0.2 0.4 0.6 Ee - Irradiance (mW/cm) Figure 9. Reverse Light Current vs. Irradiance Figure 12. Relative Radiant Sensitivity vs. Angular Displacement 8 1.0 Ira, rel - Rel. Reverse Light Current CD - Diode Capacitance (pF) 6 0.8 Media: Kodak Gray Card IF = 10 mA E=0 f = 1 MHz 4 0.6 0.4 2 0.2 0 0.1 94 8430 0.0 1 10 100 19966 0 5 10 15 20 25 30 35 40 45 50 VR- Reverse Voltage (V) d - Distance to Reflecting Card (mm) Figure 10. Diode Capacitance vs. Reverse Voltage Figure 13. Relative Reverse Light Current vs. Distance S () rel - Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0 750 12786 850 950 1050 1150 - Wavelength (nm) Figure 11. Relative Spectral Sensitivity vs. Wavelength Document Number 83795 Rev. 1.2, 04-Sep-06 www.vishay.com 5 TCND5000 Vishay Semiconductors Taping 18222 www.vishay.com 6 Document Number 83795 Rev. 1.2, 04-Sep-06 TCND5000 Vishay Semiconductors Package Dimensions in mm 19968 Document Number 83795 Rev. 1.2, 04-Sep-06 www.vishay.com 7 TCND5000 Vishay Semiconductors Precautions For Use 1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 C to 30 C, R.H. 60 % 2.2 Floor life must not exceed 72 h, acc. to JEDEC level 4, J-STD-020. Once the package is opened, the products should be used within 72 h. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than 72 h in an atmosphere 5 C to 30 C, R.H. 60 %, devices should be treated at 60 C 5 C for 15 hrs. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3 Reflow Solder Profiles 300 250 255 C 240 C 217 C 19003 max. 260 C 245 C Temperature (C) 200 max. 20 s 150 max. 120 s max. 100 s 100 50 0 0 50 100 150 200 250 300 max. Ramp up 3C/s max. Ramp down 6C/s Time (s) Figure 14. Lead (Pb)-Free Reflow Solder Profile 300 max. 240 C ca. 230 C 948625 10s 250 Temperature (C) 200 215 C 150 100 50 2 K/s - 4 K/s full line dotted : typical :process limits max. 160 C 90s - 120s max 40s Lead Temperature 0 0 50 100 150 200 250 Time (s) Figure 15. Lead Tin (SnPb) Reflow Solder Profile www.vishay.com 8 Document Number 83795 Rev. 1.2, 04-Sep-06 TCND5000 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 83795 Rev. 1.2, 04-Sep-06 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of TCND5000
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |