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| 2SC1623F Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pd TJ, TSTG Ratings 60 50 5 150 250 +150, -55 ~ +150 Unit V V V mA mW CHARACTERISTICS at Ta = 25C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat)1 *hFE1 *hFE2 *hFE3 fT Cob Min. 60 50 5 90 25 80 80 - Typ. - Max. 100 100 250 1.0 600 3.5 Unit V V V nA nA mV V IC=100uA IC=1mA IE=10uA VCB=60V VEB=5V Test Conditions IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=150mA VCE=1V, IC=10mA MHz pF VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0A * Pulse Test: Pulse Width380s, Duty Cycle2% CLASSIFICATION OF hFE1 Rank Range P 90 - 180 Y 135 - 270 G 200 - 400 B 300 - 600 01-June-2002 Rev. A Page 1 of 2 2SC1623F Elektronische Bauelemente 150 mA, 60 V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 2 |
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