![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SC1623K Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor RoHS Compliant Product A suffix of "-C" specifies halogen and lead free DESCRIPTION The 2SC1623K is designed for use in driver stage of AF amplifier and general purpose application. PACKAGE DIMENSIONS Base 3 Collector 1 SOT-23 Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 2 Emitter A L 3 H K 2 J J K C Top View 1 BS L S V V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings 60 50 5 100 200 +150, -55 ~ +150 Unit V V V mA mW CHARACTERISTICS at Ta = 25C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat)1 *hFE1 fT Min. 60 50 5 90 - Typ. 250 Max. 100 100 300 1.0 600 - Unit V V V nA nA mV V MHz IC=100uA IC=1mA IE=100uA VCB=60V VEB=5V Test Conditions IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=10mA * Pulse Test: Pulse Width380s, Duty Cycle2% CLASSIFICATION OF hFE1 Rank Range Marking P 90 - 180 L4 Y 135 - 270 L5 G 200 - 400 L6 B 300 - 600 L7 01-June-2002 Rev. A Page 1 of 3 2SC1623K Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 3 2SC1623K Elektronische Bauelemente 150 A, 60 V NPN Epitaxial Planar Transistor 01-June-2002 Rev. A Page 3 of 3 |
Price & Availability of 2SC1623K
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |