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AOD4142 N-Channel SDMOSTM POWER Transistor
General Description
The AOD4142 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free*
Features
VDS (V) = 25V ID = 50A RDS(ON) < 5.3m RDS(ON) < 9.8m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
100% UIS Tested! 100% R g Tested!
Top View D
TO-252 D-PAK
Bottom View
D
G S G S G S
Absolute Maximum Ratings TA=25 unless otherwise noted C Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current A Avalanche Current
C
Maximum 25 20 50 43 120 17 13 50 63 50 25 2.5 1.6 -55 to 175
Units V V
VGS TC=25 C TC=100 C TA=25 C TA=70 C IDSM IAR EAR PD PDSM TJ, TSTG TC=25 C ID IDM
A
Repetitive avalanche energy L=50uH C Power Dissipation B Power Dissipation A C TC=100 C TA=25 TA=70 C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
mJ W W C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 15 41 2.1
Max 20 50 3
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4142
C Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=25V, VGS=0V C TJ=55 VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=30A IS=1A, VGS=0V C TJ=125 1.2 120 4.4 6.6 7.8 65 0.7 1 50 1440 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 310 170 0.8 25 VGS=10V, VDS=12.5V, ID=30A 12 4 5.3 VGS=10V, VDS=12.5V, RL=0.42, RGEN=3 IF=30A, dI/dt=500A/s 9.6 17 1800 445 285 1.6 31 15 4.8 8.9 8 10.4 29 9 12 21 14 25 2160 580 400 2.4 37 18 6 13 5.3 7.9 9.8 2 Min 25 10 50 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/s
A: The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 The C. Power dissipation PDSM is based on RJA and the maximum allowed junction temperature of 150 The value in any given application depends C. on the user's specific board design, and the maximum temperature of 175 may be used if the PCB allow s it. C C, B. The power dissipation PD is based on TJ(MAX)=175 using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming C. a maximum junction temperature of TJ(MAX)=175 G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 The SOA C. curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1 : Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V 80 7V 60 ID (A) ID(A) 4V 40 20 20 VGS=3.5V 0 0 1 2 3 4 5 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 1.6 VGS=10V, 30A 1.4 1.2 1 0.8 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 0 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature 125C 25C 40 5V 4.5V 60 80 VDS=5V
0 VDS (Volts) Fig 1: On-Region Characteristics 12 10 VGS=4.5V RDS(ON) (m ) 8 6 4 VGS=10V 2 0
17 5 2 VGS=4.5V, 20A 10
20 ID=30A 15 RDS(ON) (m ) IS (A)
1.0E+02 1.0E+01 43 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C
40
10
125C
25C
5
0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=12.5V ID=30A Capacitance (pF) 2800 2400 2000 1600 1200 800 400 Crss 0 0 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 35 0 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss Ciss
8
VGS (Volts)
6
4
2
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s
200
10s
Power (W)
160 120 80 40 0 0.0001
TJ(Max)=175C TC=25C
RDS(ON) limited DC
100s 1m s 10ms
17 5 2 10
TJ(Max)=175 C C TC=25
0.1 1 VDS (Volts) 10 100
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.001
0.01
0.1
1
10
10 Z JC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
43 40
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 ID(A), Peak Avalanche Current 70 60 50 40 30 20 10 0 0.000001 TA=125C TA=150C TA=100C TA=25C Power Dissipation (W) 50 40 30 20 10 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F) 60
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
60 50 Current rating ID(A)
10000 TA=25C 1000 Power (W)
40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F)
17 100 5 2 10 10
1 1E05
1E- 0.001 0.01 0.1 1 10 100 1000 0 04 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
100 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 43 40
10
1
0.1
PD
0.01
Single Pulse
Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4142
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 25 20 Qrr (nC) Qrr 15 125C 10 Irm 5 0 0 5 10 15 20 25 30 IB (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 30 25 20 Qrr (nC) 15 10 5 0 0 Irm 100 200 300 400 500 600 700 25C 2 0 800 5 25C Is=20A 125C 8 25C Qrr 6 4 15 Irm (A) trr (ns) trr 125 25C 1 S 0.5 0 800 10 20 Is=20A 125C 2 1.5 S 600 700 25C 4 2 0 25C 6 di/dt=700A/s 125C 12 10 8 Irm (A) trr (ns) 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 IB (A) Figure 18: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 2.5 S 25C 2 trr di/dt=700A/s 125C 3 2.5
125C 1 0.5 0
10
125
0 0 100 200 300 400 500
di/dt (A/s) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A/s) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
25C
1.5
AOD4142
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds EAR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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