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IS42S32800D IS45S32800D
8M x 32 256Mb SYNCHRONOUS DRAM
APRIL 2009
FEATURES
* Clockfrequency:166,143MHz * Fullysynchronous;allsignalsreferencedtoa positive clock edge * Internalbankforhidingrowaccess/precharge * SinglePowersupply:3.3V+0.3V * LVTTLinterface * Programmableburstlength -(1,2,4,8,fullpage) * Programmableburstsequence: Sequential/Interleave * AutoRefresh(CBR) * SelfRefresh * 4096refreshcyclesevery16ms(A2grade)or 64ms(Commercial,Industrial,A1grade) * Randomcolumnaddresseveryclockcycle * ProgrammableCASlatency(2,3clocks) * Burstread/writeandburstread/singlewrite operations capability * Burstterminationbyburststopandprecharge command
OVERVIEW ISSI's256MbSynchronousDRAMachieveshigh-speed
data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized in 2Meg x 32 bit x 4 Banks.
KEY TIMING PARAMETERS
Parameter ClkCycleTime CASLatency=3 CASLatency=2 ClkFrequency CASLatency=3 CASLatency=2 AccessTimefromClock CASLatency=3 CASLatency=2 -6 6 10 166 100 5.4 6.5 -7 7 10 143 100 5.4 6.5 -75E
--
7.5
--
133
--
5.5
Unit ns ns Mhz Mhz ns ns
ADDRESS TABLE
Parameter Configuration RefreshCount Com./Ind. A1 A2 RowAddresses Column Addresses BankAddress Pins Autoprecharge Pins 8M x 32 2Mx32x4banks 4K/64ms 4K/64ms 4K/16ms A0 - A11 A0-A8 BA0,BA1 A10/AP
OPTIONS
* Package: 86-pinTSOP-II 90-ballTF-BGA * OperatingTemperatureRange: Commercial (0oC to +70oC) Industrial(-40oCto+85oC) AutomotiveGrade,A1(-40oCto+85oC) AutomotiveGrade,A2(-40oCto+105oC) * DieRevision:D
Copyright (c) 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
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IS42S32800D, IS45S32800D
DEVICE OVERVIEW
The 256Mb SDRAM is a high speed CMOS, dynamic random-accessmemorydesignedtooperatein3.3VVdd and3.3VVddq memorysystemscontaining268,435,456 bits.Internallyconfiguredasaquad-bankDRAMwitha synchronousinterface.Each67,108,864-bitbankisorganizedas4,096rowsby512columnsby32bits. The256MbSDRAMincludesanAUTOREFRESHMODE, and a power-saving, power-down mode. All signals are registeredonthepositiveedgeoftheclocksignal,CLK. AllinputsandoutputsareLVTTLcompatible. The256MbSDRAMhastheabilitytosynchronouslyburst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row precharge initiated at the end of the burst sequenceisavailablewiththeAUTOPRECHARGEfunction enabled. Precharge one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followedbyaREADorWRITEcommand.TheACTIVE command in conjunction with address bits registered are used to select the bank and row to be accessed (BA0, BA1selectthebank;A0-A11selecttherow).TheREAD or WRITE commands in conjunction with address bits registered are used to select the starting column location for the burst access. ProgrammableREADorWRITEburstlengthsconsistof 1,2,4and8locationsorfullpage,withaburstterminate option.
FUNCTIONAL BLOCK DIAGRAM (FOR 2Mx32x4 BANKS)
CLK CKE CS RAS CAS WE
DQM0-DQM3 COMMAND DECODER & CLOCK GENERATOR
DATAIN BUFFER
32 32 4
MODE REGISTER
12
REFRESH CONTROLLER
DQ0-31
SELF REFRESH CONTROLLER
A10
A11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 BA0 BA1
12
32
DATAOUT BUFFER
VDD/VDDQ Vss/VssQ
32
REFRESH COUNTER
4096 4096 4096 4096
ROWDECODER
MULTIPLEXER
12
MEMORYCELL ARRAY
ROW ADDRESS LATCH
12
ROW ADDRESS BUFFER
BANK 0
SENSEAMPI/OGATE
COLUMN ADDRESSLATCH
9
512 (x32)
BANKCONTROLLOGIC
BURSTCOUNTER COLUMN ADDRESSBUFFER
COLUMNDECODER
9
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Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
IS42S32800D, IS45S32800D
PIN CONFIGURATIONS
86 pin TSOP - Type II for x32
VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDD DQM0 WE CAS RAS CS A11 BA0 BA1 A10 A0 A1 A2 DQM2 VDD NC DQ16 VSSQ DQ17 DQ18 VDDQ DQ19 DQ20 VSSQ DQ21 DQ22 VDDQ DQ23 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSS DQM1 NC NC CLK CKE A9 A8 A7 A6 A5 A4 A3 DQM3 VSS NC DQ31 VDDQ DQ30 DQ29 VSSQ DQ28 DQ27 VDDQ DQ26 DQ25 VSSQ DQ24 VSS
PIN DESCRIPTIONS
A0-A11 A0-A8 BA0,BA1 DQ0toDQ31 CLK CKE CS RAS CAS RowAddressInput ColumnAddressInput BankSelectAddress DataI/O SystemClockInput ClockEnable Chip Select RowAddressStrobeCommand Column Address Strobe Command WE DQM0-DQM3 Vdd Vss Vddq Vssq NC WriteEnable x32Input/OutputMask Power Ground PowerSupplyforI/OPin GroundforI/OPin NoConnection
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IS42S32800D, IS45S32800D
PIN CONFIGURATION PACKAGECODE:B90BALLTF-BGA(TopView)(8.00mmx13.00mmBody,0.8mmBallPitch)
123456789 A B C D E F G H J K L M N P R
PIN DESCRIPTIONS
A0-A11 A0-A8 BA0,BA1 DQ0toDQ31 CLK CKE CS RAS CAS RowAddressInput ColumnAddressInput BankSelectAddress DataI/O SystemClockInput ClockEnable Chip Select RowAddressStrobeCommand Column Address Strobe Command WE DQM0-DQM3 Vdd Vss Vddq Vssq NC WriteEnable x32Input/OutputMask Power Ground PowerSupplyforI/OPin GroundforI/OPin NoConnection
DQ26 DQ24
VSS
VDD DQ23 DQ21 VDDQ VSSQ DQ19 DQ22 DQ20 VDDQ DQ17 DQ18 VDDQ NC A2 A10 NC BA0 CAS VDD DQ6 DQ1 DQ16 VSSQ DQM2 VDD A0 BA1 CS A1 A11 RAS
DQ28 VDDQ VSSQ VSSQ DQ27 DQ25 VSSQ DQ29 DQ30 VDDQ DQ31 VSS DQM3 A4 A7 CLK DQM1 A5 A8 CKE NC NC A3 A6 NC A9 NC VSS
WE DQM0 DQ7 VSSQ DQ5 VDDQ DQ3 VDDQ
VDDQ DQ8
VSSQ DQ10 DQ9 VSSQ DQ12 DQ14 DQ11 VDDQ VSSQ DQ13 DQ15 VSS
VDDQ VSSQ DQ4 VDD DQ0 DQ2
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Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
IS42S32800D, IS45S32800D
PIN FUNCTIONS
Symbol A0-A11 Type InputPin Function (In Detail) AddressInputs:A0-A11aresampledduringtheACTIVE command(row-addressA0-A11)andREAD/WRITEcommand(columnaddress A0-A8),withA10definingautoprecharge)toselectonelocationoutofthememory arrayintherespectivebank.A10issampledduringaPRECHARGEcommandto determineifallbanksaretobeprecharged(A10HIGH)orbankselectedby BA0,BA1(LOW).Theaddressinputsalsoprovidetheop-codeduringaLOAD MODEREGISTERcommand. BankSelectAddress:BA0andBA1defineswhichbanktheACTIVE,READ,WRITE orPRECHARGEcommandisbeingapplied. CAS, in conjunction with the RAS and WE, forms the device command. See the "CommandTruthTable"fordetailsondevicecommands. TheCKEinputdetermineswhethertheCLKinputisenabled.Thenextrisingedge oftheCLKsignalwillbevalidwhenisCKEHIGHandinvalidwhenLOW.WhenCKE isLOW,thedevicewillbeineitherpower-downmode,clocksuspendmode,orself refresh mode. CKEisan asynchronous input. CLKisthemasterclockinputforthisdevice.ExceptforCKE,allinputstothisdevice areacquiredinsynchronizationwiththerisingedgeofthispin. TheCS input determines whether command input is enabled within the device. Command input is enabled when CSisLOW,anddisabledwithCSisHIGH.The device remains in the previous state when CSisHIGH. DQM0-DQM3controlthefourbytesoftheI/Obuffers(DQ0-DQ31).Inread mode,DQMncontroltheoutputbuffer.WhenDQMnisLOW,thecorrespondingbufferbyteisenabled,andwhenHIGH,disabled.TheoutputsgototheHIGHimpedancestatewhenDQMnisHIGH.ThisfunctioncorrespondstoOE in conventional DRAMs.Inwritemode,DQMncontroltheinputbuffer.WhenDQMnisLOW,the correspondingbufferbyteisenabled,anddatacanbewrittentothedevice.When DQMnisHIGH,inputdataismaskedandcannotbewrittentothedevice. DataontheDataBusislatchedonthesepinsduringWritecommands,andbufferedafter Readcommands. RAS, in conjunction with CAS and WE, forms the device command. See the "CommandTruthTable"itemfordetailsondevicecommands. WE, in conjunction with RAS and CAS, forms the device command. See the "CommandTruthTable"itemfordetailsondevicecommands. Vddq is the output buffer power supply. Vdd is the device internal power supply. Vssq is the output buffer ground. Vss is the device internal ground.
BA0,BA1 CAS CKE
InputPin InputPin InputPin
CLK CS
InputPin InputPin
D QM0-DQM3
InputPin
DQ0-DQ31 RAS WE Vddq Vdd Vssq Vss
I nput/OutputPin InputPin InputPin P owerSupplyPin P owerSupplyPin P owerSupplyPin P owerSupplyPin
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IS42S32800D, IS45S32800D
GENERAL DESCRIPTION READ
TheREADcommandselectsthebankfromBA0,BA1inputs and starts a burst read access to an active row. Inputs A0-A8providesthestartingcolumnlocation.WhenA10is HIGH,thiscommandfunctionsasanAUTOPRECHARGE command.Whentheautoprechargeisselected,therow beingaccessedwillbeprechargedattheendoftheREAD burst.Therowwillremainopenforsubsequentaccesses when AUTO PRECHARGE is not selected. DQ's read dataissubjecttothelogiclevelontheDQMinputstwo clocksearlier.WhenagivenDQMsignalwasregistered HIGH,thecorrespondingDQ'swillbeHigh-Ztwoclocks later.DQ'swillprovidevaliddatawhentheDQMsignal wasregisteredLOW. PRECHARGEfunctioninconjunctionwithaspecificREAD orWRITEcommand.ForeachindividualREADorWRITE command, auto precharge is either enabled or disabled. AUTOPRECHARGEdoesnotapplyexceptinfull-page burst mode. Upon completion of the READ or WRITE burst, a precharge of the bank/row that is addressed is automatically performed.
AUTO REFRESH COMMAND
ThiscommandexecutestheAUTOREFRESHoperation. Therowaddressandbanktoberefreshedareautomatically generatedduringthisoperation. Thestipulatedperiod(trc)is requiredforasinglerefreshoperation,andnoothercommandscanbeexecutedduringthisperiod. Thiscommand isexecutedatleast4096timesforeveryTref.Duringan AUTOREFRESHcommand,addressbitsare"Don'tCare". ThiscommandcorrespondstoCBRAuto-refresh.
WRITE
A burst write access to an active row is initiated with the WRITE command. BA0, BA1 inputs selects the bank, and the starting column location is provided by inputs A0-A8.Whether or not AUTO-PRECHARGE is used is determined by A10. Therowbeingaccessedwillbeprechargedattheendof theWRITE burst, if AUTO PRECHARGE is selected. If AUTOPRECHARGEisnotselected,therowwillremain openforsubsequentaccesses. A memory array is written with corresponding input data onDQ'sandDQMinputlogiclevelappearingatthesame time.DatawillbewrittentomemorywhenDQMsignalis LOW.WhenDQMisHIGH,thecorrespondingdatainputs willbeignored,andaWRITEwillnotbeexecutedtothat byte/column location.
BURST TERMINATE
The BURSTTERMINATE command forcibly terminates the burst read and write operations by truncating either fixed-length or full-page bursts and the most recently registeredREADorWRITEcommandpriortotheBURST TERMINATE.
COMMAND INHIBIT
COMMANDINHIBITpreventsnewcommandsfrombeing executed.Operationsinprogressarenotaffected,apart fromwhethertheCLKsignalisenabled
NO OPERATION
WhenCSislow,theNOPcommandpreventsunwanted commands from being registered during idle or wait states.
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. BA0,BA1canbeusedtoselectwhichbankisprecharged or they are treated as "Don't Care". A10 determined whether one or all banks are precharged. After executing this command, the next command for the selected bank(s)isexecutedafterpassageoftheperiodtRP, which istheperiodrequiredforbankprecharging.Onceabank has been precharged, it is in the idle state and must be activatedpriortoanyREADorWRITEcommandsbeing issued to that bank.
LOAD MODE REGISTER
DuringtheLOADMODEREGISTERcommandthemode registerisloadedfromA0-A11.Thiscommandcanonly be issued when all banks are idle.
ACTIVE COMMAND
When the ACTIVE COMMAND is activated, BA0, BA1 inputs selects a bank to be accessed, and the address inputsonA0-A11selectstherow.UntilaPRECHARGE command is issued to the bank, the row remains open for accesses.
AUTO PRECHARGE
TheAUTOPRECHARGEfunctionensuresthattheprecharge is initiated at the earliest valid stage within a burst. Thisfunctionallowsforindividual-bankprechargewithout requiringanexplicitcommand.A10toenabletheAUTO 6
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
IS42S32800D, IS45S32800D
COMMAND TRUTH TABLE
CKE Function n-1 Devicedeselect(DESL) H Nooperation(NOP) H Burststop(BST) H Read H Readwithautoprecharge H Write H Writewithautoprecharge H Bankactivate(ACT) H Prechargeselectbank(PRE) H Prechargeallbanks(PALL) H CBRAuto-Refresh(REF) H Self-Refresh(SELF) H Moderegisterset(MRS) H n x x x x x x x x x x H L x CS H L L L L L L L L L L L L RAS x H H H H H H L L L L L L CAS x H H L L L L H H H L L L WE x H L H H L L H L L H H L BA1 x x x V V V V V V x x x L BA0 x x x V V V V V V x x x L A10 x x x L H L H V L H x x L A11 A9 - A0 x x x V V V V V x x x x V
Note:H=Vih,L=Vilx=VihorVil,V=ValidData.
DQM TRUTH TABLE
Function Datawrite/outputenable Datamask/outputdisable Upperbytewriteenable/outputenable Lowerbytewriteenable/outputenable Upperbytewriteinhibit/outputdisable Lowerbytewriteinhibit/outputdisable
Note:H=Vih,L=Vilx=VihorVil,V=ValidData.

CKE n-1 H H H H H H
n x x x x x x

DQM U L H L x H x

L L H x L x H
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IS42S32800D, IS45S32800D
CKE TRUTH TABLE
CurrentState/Function ActivatingClocksuspendmodeentry AnyClocksuspendmode Clocksuspendmodeexit AutorefreshcommandIdle(REF) SelfrefreshentryIdle(SELF) PowerdownentryIdle Selfrefreshexit Powerdownexit
Note:H=Vih,L=Vilx=VihorVil,V=ValidData.

CKE n-1 n H L L L L H H H H L H L L H L H L H
CS x x x L L x L H x
RAS x x x L L x H x x
CAS x x x L L x H x x
WE x x x H H x H x x
Address x x x x x x x x x
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IS42S32800D, IS45S32800D
FUNCTIONAL TRUTH TABLE
Current State Idle RowActive Read Write CS H L L L L L L L L H L L L L L L L L H L L L L L L L L H L L L L L L L L RAS CAS X H H H H L L L L X H H H H L L L L X H H H H L L L L X H H H H L L L L X H H L L H H L L X H H L L H H L L X H H L L H H L L X H H L L H H L L WE X H L H L H L H L X H L H L H L H L X H L H L H L H L X H L H L H L H L Address X X X BA,CA,A10 A,CA,A10 BA,RA BA,A10 X OC,BA1=L X X X BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X OC,BA X X X BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X OC,BA X X X BA,CA,A10 BA,CA,A10 BA,RA BA,A10 X OC,BA Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA RAACT PRE/PALL REF/SELF MRS Action NoporPowerDown(2) NoporPowerDown(2) NoporPowerDown ILLEGAL(3) ILLEGAL(3) Rowactivating Nop AutorefreshorSelf-refresh(4) Moderegisterset Nop Nop Nop Beginread(5) Beginwrite(5) ILLEGAL(3) Precharge Prechargeallbanks(6) ILLEGAL ILLEGAL Continuebursttoendto Rowactive ContinuebursttoendRow Rowactive Burststop,Rowactive Terminateburst, begin new read (7) Terminateburst, begin write (7,8) ILLEGAL(3) Terminateburst Precharging ILLEGAL ILLEGAL Continuebursttoend Writerecovering Continuebursttoend Writerecovering Burststop,Rowactive Terminateburst,startread: DetermineAP(7,8) Terminateburst,newwrite: DetermineAP(7) ILLEGAL(3) TerminateburstPrecharging(9) ILLEGAL ILLEGAL
Note:H=Vih,L=Vilx=VihorVil,V=ValidData,BA=BankAddress,CA+ColumnAddress,RA=RowAddress,OC=Op-Code
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IS42S32800D, IS45S32800D
FUNCTIONAL TRUTH TABLE Continued:
Current State Readwithauto Precharging WritewithAuto Precharge Precharging RowActivating CS H L L L L L L L L H L L L L L L L L H L L L L L L L L H L L L L L L L L RAS CAS x H H H H L L L L x H H H H L L L L x H H H H L L L L x H H H H L L L L x H H L L H H L L x H H L L H H L L x H H L L H H L L x H H L L H H L L WE x H L H L H L H L x H L H L H L H L x H L H L H L H L x H L H L H L H L Address x x x BA,CA,A10 BA,CA,A10 BA,RA BA,A10 x OC,BA x x x BA,CA,A10 BA,CA,A10 BA,RA BA,A10 x OC,BA x x x BA,CA,A10 BA,CA,A10 BA,RA BA,A10 x OC,BA x x x BA,CA,A10 BA,CA,A10 BA,RA BA,A10 x OC,BA Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS Action Continuebursttoend,Precharge Continuebursttoend,Precharge ILLEGAL ILLEGAL(11) ILLEGAL(11) ILLEGAL(3) ILLEGAL(11) ILLEGAL ILLEGAL Continuebursttoend,Write recoveringwithautoprecharge Continuebursttoend,Write recovering with auto precharge ILLEGAL ILLEGAL(11) ILLEGAL(11) ILLEGAL(3,11) ILLEGAL(3,11) ILLEGAL ILLEGAL Nop,EnteridleaftertRP Nop,EnteridleaftertRP Nop,EnteridleaftertRP ILLEGAL(3) ILLEGAL(3) ILLEGAL(3) NopEnteridleaftertRP ILLEGAL ILLEGAL Nop,EnterbankactiveaftertRCD Nop,EnterbankactiveaftertRCD Nop,EnterbankactiveaftertRCD ILLEGAL(3) ILLEGAL(3) ILLEGAL(3,9) ILLEGAL(3) ILLEGAL ILLEGAL
Note:H=Vih,L=Vilx=VihorVil,V=ValidData,BA=BankAddress,CA+ColumnAddress,RA=RowAddress,OC=Op-Code
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IS42S32800D, IS45S32800D
FUNCTIONAL TRUTH TABLE Continued:
Current State WriteRecovering WriteRecovering withAuto Precharge Refresh ModeRegister Accessing CS H L L L L L L L L H L L L L L L L L H L L L L L L L H L L L L RAS CAS x H H H H L L L L x H H H H L L L L x H H H L L L L x H H H L x H H L L H H L L x H H L L H H L L x H L L H H L L x H H L x WE x H L H L H L H L x H L H L H L H L x x H L H L H L x H L x x Address x x x BA,CA,A10 BA,CA,A10 BA,RA BA,A10 x OC,BA x x x BA,CA,A10 BA,CA,A10 BA,RA BA,A10 x OC,BA x x BA,CA,A10 BA,CA,A10 BA,RA BA,A10 x OC,BA x x x BA,CA,A10 BA,RA Command DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP/BST READ/READA WRIT/WRITA ACT PRE/PALL REF/SELF MRS DESL NOP BST READ/WRITE Action Nop,EnterrowactiveaftertDPL Nop,EnterrowactiveaftertDPL Nop,EnterrowactiveaftertDPL Beginread(8) Beginnewwrite ILLEGAL(3) ILLEGAL(3) ILLEGAL ILLEGAL Nop,EnterprechargeaftertDPL Nop,EnterprechargeaftertDPL Nop,EnterrowactiveaftertDPL ILLEGAL(3,8,11) ILLEGAL(3,11) ILLEGAL(3,11) ILLEGAL(3,11) ILLEGAL ILLEGAL Nop,EnteridleaftertRC Nop,EnteridleaftertRC ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Nop,Enteridleafter2clocks Nop,Enteridleafter2clocks ILLEGAL ILLEGAL
ACT/PRE/PALL ILLEGAL REF/MRS
Note:H=Vih,L=Vilx=VihorVil,V=ValidData,BA=BankAddress,CA+ColumnAddress,RA=RowAddress,OC=Op-Code Notes: 1.AllentriesassumethatCKEisactive(CKEn-1=CKEn=H). 2.Ifbothbanksareidle,andCKEisinactive(Low),thedevicewillenterPowerDownmode.AllinputbuffersexceptCKEwillbe disabled. 3.Illegaltobankinspecifiedstates;FunctionmaybelegalinthebankindicatedbyBankAddress(BA),dependingonthestateof that bank. 4.Ifbothbanksareidle,andCKEisinactive(Low),thedevicewillenterSelf-Refreshmode.AllinputbuffersexceptCKEwillbe disabled. 5.IllegaliftRCDisnotsatisfied. 6.IllegaliftRASisnotsatisfied. 7.Mustsatisfyburstinterruptcondition. 8.Mustsatisfybuscontention,busturnaround,and/orwriterecoveryrequirements. 9.Mustmaskprecedingdatawhichdon'tsatisfytDPL. 10.IllegaliftRRDisnotsatisfied. 11. Illegal for single bank, but legal for other banks.
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CKE RELATED COMMAND TRUTH TABLE(1)
Current State Operation Self-Refresh(S.R.) INVALID,CLK(n-1)wouldexitS.R. Self-RefreshRecovery(2) Self-RefreshRecovery(2) Illegal Illegal MaintainS.R. Self-RefreshRecoveryIdleAftertrc Idle After trc Illegal Illegal Beginclocksuspendnextcycle(5) Beginclocksuspendnextcycle(5) Illegal Illegal Exitclocksuspendnextcycle(2) Maintainclocksuspend Power-Down(P.D.) INVALID,CLK(n-1)wouldexitP.D. EXITP.D.-->Idle(2) Maintainpowerdownmode BothBanksIdle RefertooperationsinOperativeCommandTable RefertooperationsinOperativeCommandTable RefertooperationsinOperativeCommandTable Auto-Refresh RefertooperationsinOperativeCommandTable RefertooperationsinOperativeCommandTable RefertooperationsinOperativeCommandTable RefertooperationsinOperativeCommandTable Self-Refresh(3) RefertooperationsinOperativeCommandTable Power-Down(3) Anystate RefertooperationsinOperativeCommandTable otherthan Beginclocksuspendnextcycle(4) listedabove Exitclocksuspendnextcycle Maintainclocksuspend n-1 H L L L L L H H H H H H H H L L H L L H H H H H H H H H H L H H L L
CKE
n X H H H H L H H H H L L L L H L X H L H H H H H L L L L L X H L H L
CS X H L L L X H L L L H L L L X X X X X H L L L L H L L L L X X X X X
RAS X X H H L X X H H L X H H L X X X X X X H L L L X H L L L X X X X X
CAS X X H L X X X H L X X H L X X X X X X X X H L L X X H L L X X X X X
WE Address X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X -- X X X X X -- X -- X -- H X L Op-Code X -- X -- X -- H X L Op-Code X X X X X X X X X X
Notes: 1.H:Highlevel,L:lowlevel,X:Highorlowlevel(Don'tcare). 2.CKELowtoHightransitionwillre-enableCLKandotherinputsasynchronously.Aminimumsetup time must be satisfied beforeanycommandotherthanEXIT. 3.PowerdownandSelfrefreshcanbeenteredonlyfromthebothbanksidlestate. 4.MustbelegalcommandasdefinedinOperativeCommandTable. 5.Illegaliftxsr is not satisfied.
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IS42S32800D, IS45S32800D
STATE DIAGRAM
Self Refresh SELF SELFexit Mode Register Set MRS IDLE REF CBR(Auto) Refresh
CKE CKE ACT Power Down
Row Active BST
CKE CKE Read BST
Active Power Down
ith
rge ha
Write
Au
ith w ad rge Re cha e Pr to
w
rite
W
to
WRITE SUSPEND
Au
CKE WRITE CKE
Pr
ec
Write
Read CKE READ CKE
Read
Write
READ SUSPEND
POWER ON
Precharge Precharge
PR E( Pr ec
ha
rge
WRITEA SUSPEND
ter
WRITEA
mi
CKE CKE
na
tio
RR E( Pre arg ch et ina erm tio n)
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
n)
CKE READA CKE
READA SUSPEND
Automaticsequence ManualInput
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol Vdd max Vddq max Vin Vout Pd max Ics Topr Parameters MaximumSupplyVoltage MaximumSupplyVoltageforOutputBuffer InputVoltage OutputVoltage AllowablePowerDissipation outputShortedCurrent operatingTemperature Com. Ind. A1 A2 StorageTemperature Rating -0.5to+4.6 -0.5to+4.6 -0.5toVdd+0.5 -1.0toVddq+0.5 1 50 0to+70 -40to+85 -40to+85 -40to+105 -65to+150 Unit V V V V W mA C

Tstg
C
Notes: 1. StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions abovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolute maximumratingconditionsforextendedperiodsmayaffectreliability. 2. AllvoltagesarereferencedtoVss.
DC RECOMMENDED OPERATING CONDITIONS
(Ta=0oC to +70oCforCommercialgrade.Ta=-40oCto+85oCforIndustrialandA1grade.Ta=-40oCto+105oCforA2grade.) Symbol Vdd Vddq Vih(1) Vil(2)
Note: 1.Vih (max)=Vddq +1.2V (pulse width < 3ns). 2.Vil(min)=-1.2V (pulse width < 3ns). 3. AllvoltagesarereferencedtoVss.
Parameter SupplyVoltage I/OSupplyVoltage InputHighVoltage InputLowVoltage

Min. 3.0 3.0 2.0 -0.3
Typ. 3.3 3.3 -- --
Max. Unit 3.6 V 3.6 V Vddq +0.3 V +0.8 V
CAPACITANCE CHARACTERISTICS (AtTa=0to+25C,Vdd=Vddq =3.30.3V)
Symbol Cin1 Cin2 Ci/o Parameter InputCapacitance:CLK InputCapacitance:Allotherinputpins DataInput/OutputCapacitance:I/Os Min. 2.5 2.5 4.0 Max. -6 -7 3.5 4.0 3.8 5.0 6.5 6.5 Unit pF pF pF
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DC ELECTRICAL CHARACTERISTICS 1 (RecommendedOperationConditionsunlessotherwisenoted.)
Symbol idd1 (1) idd2p idd2ps idd2n (2) Idd2ns Idd3p Idd3ps idd3n (2) Idd3ns idd4 idd5 idd6 Parameter OperatingCurrent PrechargeStandbyCurrent (InPower-DownMode) PrechargeStandbyCurrent (InPower-DownMode) PrechargeStandbyCurrent (InNonPower-DownMode) PrechargeStandbyCurrent (InNonPower-DownMode) ActiveStandbyCurrent (Power-DownMode) ActiveStandbyCurrent (Power-DownMode) Active Standby Current (InNonPower-DownMode) Active Standby Current (InNonPower-DownMode) OperatingCurrent Auto-RefreshCurrent Self-RefreshCurrent Test Condition Onebankactive,CL=3,BL=1, tclk=tclk(min),trc=trc(min) CKE Vil (max),tck=15ns CKE Vil (max),CLK Vil (max) CS Vdd-0.2V,CKE Vih (min) tck=15ns CS Vdd-0.2V,CKE Vih (min)or CKE Vil (max),Allinputsstable CKE Vil (max),tck=15ns CKE Vil (max),CLK Vil (max) CS Vdd-0.2V,CKE Vih (min) tck=15ns CS Vdd-0.2V,CKE Vih (min)or CKE Vil (max),Allinputsstable Allbanksactive,BL=4,CL=3, tck=tck(min) trc=trc(min),tclk=tclk(min) CKE 0.2V -6 135 3 3 45 30 4 3 55 30 180 350 3 -7 125 3 3 45 30 4 3 55 30 150 270 3 -75E 135 3 3 45 30 4 3 55 30 180 285 3 Unit mA mA mA mA mA mA mA mA mA mA mA mA
Notes: 1. Idd (max)isspecifiedattheoutputopencondition. 2. Input signals are changed one time during 30ns.
DC ELECTRICAL CHARACTERISTICS 2 (RecommendedOperationConditionsunlessotherwisenoted.)
Symbol iil iol Voh Vol Parameter InputLeakageCurrent OutputLeakageCurrent OutputHighVoltageLevel OutputLowVoltageLevel Test Condition 0VVinVdd, with pins other than thetestedpinat0V Outputisdisabled,0VVoutVdd, Ioh=-2mA Iol=2mA Min -10 -10 2.4 -- Max 10 10 -- 0.4 Unit A A V V

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AC ELECTRICAL CHARACTERISTICS (1,2,3,4)
-6 Symbol tck3 tck2 tac3 tac2 tchi tcl toh3 toh2 tlz thz tds tdh tas tah tcks tckh tcs tch trc tras trp trcd trrd tdpl tdal tmrd tdde txsr tt tref Parameter ClockCycleTime AccessTimeFromCLK CLKHIGHLevelWidth CLKLOWLevelWidth OutputDataHoldTime OutputLOWImpedanceTime OutputHIGHImpedanceTime InputDataSetupTime
(2)
-7 Min. Max. 7 -- 10 -- -- 5.4 -- 6.5 2.5 -- 2.5 -- 2.7 -- 2.7 -- 0 -- 2.7 5.4 1.5 -- 1.0 1.0 1.0 1.0 -- -- -- -- 1.5 -- 1.5 -- 1.5 -- 67.5 -- 45 100K 20 -- 20 -- 14 -- 14 -- 35 --
-75E Min. Max. Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ms -- -- 7.5 -- -- -- -- 5.5 2.5 -- 2.5 -- -- -- 2.7 -- 0 -- 2.7 5.4 1.5 -- 1.0 1.0 1.0 1.0 -- -- -- -- 1.5 -- 1.5 -- 1.5 -- 67.5 -- 45 100K 15 -- 15 -- 15 -- 15 -- 30 --
Min. Max. CASLatency=3 CASLatency=2 CASLatency=3 CASLatency=2 CASLatency=3 CAS Latency=2
(2)
6 -- 10 -- -- 5.4 -- 6.5 2.5 -- 2.5 -- 2.7 -- 2.7 -- 0 -- 2.7 5.4 1.5 -- 1.0 1.0 1.0 -- -- -- -- 1.5 -- 1.5 -- 1.5 -- 1.0 60 -- 42 100K 18 -- 18 -- 12 -- 12 -- 30 --
InputDataHoldTime(2) AddressSetupTime(2) AddressHoldTime
(2) (2)
CKESetupTime CKEHoldTime
(2)
CommandSetupTime(CS, RAS, CAS, WE,DQM) CommandHoldTime(CS, RAS, CAS, WE,DQM) CommandPeriod(REFtoREF/ACTtoACT) CommandPeriod(ACTtoPRE) CommandPeriod(PREtoACT) ActiveCommandToRead/WriteCommandDelayTime CommandPeriod(ACT[0]toACT[1]) InputDataToPrecharge CommandDelaytime InputDataToActive/Refresh CommandDelaytime(DuringAuto-Precharge) ModeRegisterProgramTime PowerDownExitSetupTime Self-RefreshExitTime TransitionTime
o (2)

12 -- 6 -- 70 -- 0.3 1.2 -- 64 -- 64 -- --
14 -- 7 -- 70 -- 0.3 1.2 -- 64 -- 64 -- 16
15 -- 7.5 -- 70 -- 0.3 1.2 -- 64 -- 64 -- --
RefreshCycleTime(4096) Ta 70 C Com., Ind., A1, A2 Ta 85oC Ind., A1, A2 Ta >85oC A2
Notes: 1. Thepower-onsequencemustbeexecutedbeforestartingmemoryoperation. 2. measured with tt =1ns.Ifclockrisingtimeislongerthan1ns,(tr/2-0.5)nsshouldbeaddedtotheparameter. 3. Thereferencelevelis1.4Vwhenmeasuringinputsignaltiming.RiseandfalltimesaremeasuredbetweenVih(min.)andVil (max). 4.Userecommendedoperationconditions.
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OPERATING FREQUENCY / LATENCY RELATIONSHIPS
SYMBOL PARAMETER -- -- tcac trcd trac trc tras trp trrd tccd tdpl tdal trbd twbd trql twdl tpql tqmd tdmd tmrd ClockCycleTime OperatingFrequency CASLatency RASLatency(trcd + tcac) CommandPeriod(REFtoREF/ACTtoACT) CommandPeriod(ACTtoPRE) CommandPeriod(PREtoACT) CommandPeriod(ACT[0]toACT[1]) ColumnCommandDelayTime (READ,READA,WRIT,WRITA) InputDataToPrechargeCommandDelayTime CASLatency=3 CASLatency=2 6 166 3 3 6 -- 10 7 3 2 1 2 5 3 -- 0 3 -- 0 -2 -- 2 0 2 7 143 3 3 6 -- 10 7 3 2 1 2 5 3 -- 0 3 -- 0 -2 -- 2 0 2 75 133 2 2 -- 4 9 6 2 2 1 2 4 -- 2 0 -- 2 0 -- -1 2 0 2 10 100 2/3 2 5 4 7 5 2 2 1 2 4 3 2 0 3 2 0 -2 -1 2 0 2 UNITS ns MHz cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle cycle
ActiveCommandToRead/WriteCommandDelayTime
InputDataToActive/RefreshCommandDelayTime (DuringAuto-Precharge)
BurstStopCommandToOutputinHIGH-ZDelayTime
(Read)
CASLatency=3 CASLatency=2
BurstStopCommandToInputinInvalidDelayTime (Write)
PrechargeCommandToOutputinHIGH-ZDelayTime
(Read)
CASLatency=3 CASLatency=2
PrechargeCommandToInputinInvalidDelayTime (Write)
LastOutputToAuto-PrechargeStartTime(Read) CASLatency=3
CASLatency=2 DQMToOutputDelayTime(Read) DQMToInputDelayTime(Write) ModeRegisterSetToCommandDelayTime
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IS42S32800D, IS45S32800D
AC TEST CONDITIONS Input Load
tCK tCHI
3.0V
Output Load
tCL
1.4V
CLK 1.4V
0V 3.0V
tCS
tCH
Z = 50 Output 50 pF
50
INPUT 1.4V
0V
tOH OUTPUT
1.4V
tAC
1.4V
AC TEST CONDITIONS
Parameter ACInputLevels InputRiseandFallTimes InputTimingReferenceLevel OutputTimingMeasurementReferenceLevel Rating 0Vto3.0V 1ns 1.4V 1.4V
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FUNCTIONAL DESCRIPTION
ReadandwriteaccessestotheSDRAMareburstoriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.AccessesbeginwiththeregistrationofanACTIVEcommandwhichisthenfollowedbyaREADorWRITE command.Theaddressbitsregisteredcoincidentwiththe ACTIVEcommandareusedtoselectthebankandrowto be accessed (BA0andBA1selectthebank,A0-A11selectthe row).TheaddressbitsA0-A8 registered coincident with the READorWRITEcommandareusedtoselectthestarting column location for the burst access. Prior to normal operation, the SDRAM must be initialized.Thefollowingsectionsprovidedetailedinformation coveringdeviceinitialization,registerdefinition,command descriptions and device operation.
Initialization
SDRAMs must be powered up and initialized in a predefined manner. The256MSDRAMisinitializedafterthepowerisapplied toVddandVddq(simultaneously)andtheclockisstable withDQMHighandCKEHigh. A100sdelayisrequiredpriortoissuinganycommand other than a COMMANDINHIBIT or a NOP.TheCOMMAND INHIBITorNOPmaybeappliedduringthe100speriodand should continue at least through the end of the period. WithatleastoneCOMMANDINHIBITorNOPcommand havingbeenapplied,aPRECHARGEcommandshould be applied once the 100s delay has been satisfied. All banksmustbeprecharged.Thiswillleaveallbanksinan idle state after which at least two AUTOREFRESH cycles must be performed. After the AUTOREFRESH cycles are complete, the SDRAM is then ready for mode register programming. The mode register should be loaded prior to applying any operational command because it will power up in an unknown state.
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IS42S32800D, IS45S32800D
INITIALIzE AND LOAD MODE REGISTER(1)
T0 CLK
tCK
T1
Tn+1 tCH
To+1 tCL
Tp+1
Tp+2
Tp+3
tCKS tCKH CKE tCMH tCMS COMMAND DQM0-DQM3 tAS tAH A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 DQ T Power-up: VCC and CLK stable T = 100s Min. tRP Precharge all banks tRC AUTO REFRESH tRC AUTO REFRESH tMRD Program MODE REGISTER (2, 3, 4) DON'T CARE ALL BANKS CODE tAS tAH CODE tAS tAH CODE BANK ROW ROW NOP tCMH tCMS PRECHARGE tCMH tCMS
AUTO REFRESH
NOP
AUTO REFRESH
NOP
Load MODE REGISTER
NOP
ACTIVE
Notes: 1. If CSisHighatclockHightime,allcommandsappliedareNOP. 2.TheModeregistermaybeloadedpriortotheAuto-Refreshcyclesifdesired. 3.JEDECandPC100specifythreeclocks. 4.OutputsareguaranteedHigh-Zafterthecommandisissued.
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AUTO-REFRESH CYCLE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 PRECHARGE NOP
Auto Refresh
tCK
T1
tCL
T2
tCH
Tn+1
To+1
NOP
Auto Refresh
NOP
ACTIVE
A0-A9, A11 ALL BANKS A10 SINGLE BANK BA0, BA1 DQ BANK(s) tAS tAH High-Z tRP tRC tRC
ROW ROW BANK
DON'T CARE
Notes: 1. CASlatency=2,3
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SELF-REFRESH CYCLE
T0 CLK tCK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 PRECHARGE
T1 tCH tCL
T2 tCKS
Tn+1
To+1
To+2
tRAS tCKS
NOP
Auto Refresh
NOP
NOP
Auto Refresh
A0-A9, A11 ALL BANKS A10 SINGLE BANK tAS tAH BA0, BA1 BANK
DQ High-Z Precharge all active banks
tRP Enter self refresh mode
tXSR CLK stable prior to exiting Exit self refresh mode self refresh mode (Restart refresh time base) DON'T CARE
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REGISTER DEFINITION Mode Register
The mode register is used to define the specific mode ofoperationoftheSDRAM.Thisdefinitionincludesthe selection of a burst length, a burst type, a CAS latency, an operating mode and a write burst mode, as shown in MODEREGISTERDEFINITION. ThemoderegisterisprogrammedviatheLOADMODE REGISTERcommandandwillretainthestoredinformation until it is programmed again or the device loses power. Mode register bits M0-M2 specify the burst length, M3 specifies the type of burst (sequentialorinterleaved),M4-M6 specifytheCASlatency,M7andM8specifytheoperating mode,M9specifiestheWRITEburstmode,andM10and M11arereservedforfutureuse. The mode register must be loaded when all banks are idle, and the controller must wait the specified time before initiatingthesubsequentoperation.Violatingeitherofthese requirementswillresultinunspecifiedoperation.
MODE REGISTER DEFINITION
BA1 BA0 A11 A10
Reserved
(1)
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Address Bus Mode Register (Mx)
Burst Length M2 0 0 0 0 1 1 1 1 Burst Type M3 0 1 Latency Mode M6 M5 M4 0 0 0 0 1 1 1 1 Operating Mode M8 M7 00 ---- M6-M0 Defined -- Mode Standard Operation All Other States Reserved 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 CAS Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved Type Sequential Interleaved M1 M0 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 M3=0 1 2 4 8 Reserved Reserved Reserved Full Page M3=1 1 2 4 8 Reserved Reserved Reserved Reserved
Write Burst Mode M9 0 1 Mode Programmed Burst Length Single Location Access
1. To ensure compatibility with future devices, should program BA1, BA0, A11, A10 = "0"
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IS42S32800D, IS45S32800D
BURST LENGTH
ReadandwriteaccessestotheSDRAMareburstoriented, with the burst length being programmable, as shown in MODEREGISTERDEFINITION.Theburstlengthdeterminesthemaximumnumberofcolumnlocationsthatcan beaccessedforagivenREADorWRITEcommand.Burst lengthsof1,2,4or8locationsareavailableforboththe sequentialandtheinterleavedbursttypes,andafull-page burst is available for the sequential type.The full-page burstisusedinconjunctionwiththeBURSTTERMINATE command to generate arbitrary burst lengths. Reservedstatesshouldnotbeused,asunknownoperation or incompatibility with future versions may result. WhenaREADorWRITEcommandisissued,ablockof columnsequaltotheburstlengthiseffectivelyselected.All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary isreached.TheblockisuniquelyselectedbyA1-A8(x32) whentheburstlengthissettotwo;byA2-A8(x32)when theburstlengthissettofour;andbyA3-A8(x32)whenthe burstlengthissettoeight.Theremaining(leastsignificant) addressbit(s)is(are)usedtoselectthestartinglocation withintheblock.Full-pageburstswrapwithinthepageif the boundary is reached.
BurstType
Accesses within a given burst may be programmed to be eithersequentialorinterleaved;thisisreferredtoasthe bursttypeandisselectedviabitM3. Theorderingofaccesseswithinaburstisdeterminedby the burst length, the burst type and the starting column address,asshowninBURSTDEFINITIONtable.
BURST DEFINITION
Burst Length 2 Starting Column Address A0 0 1 A1 A0 0 0 0 1 1 0 1 1 A2 A1 A0 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 n=A0-A8 (location0-y) Order of Accesses Within a Burst Type = Sequential Type = Interleaved 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 Cn,Cn+1,Cn+2 Cn+3,Cn+4... ...Cn-1, Cn... 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 NotSupported
4
8 Full Page (y)

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CAS Latency
The CAS latency is the delay, in clock cycles, between the registrationofaREADcommandandtheavailabilityof thefirstpieceofoutputdata.Thelatencycanbesettotwoor three clocks. IfaREADcommandisregisteredatclockedgen,and the latency is m clocks, the data will be available by clock edge n + m.TheDQswillstartdrivingasaresultofthe clock edge one cycle earlier (n + m -1),andprovidedthat the relevant access times are met, the data will be valid by clock edge n + m.Forexample,assumingthattheclock cycle time is such that all relevant access times are met, ifaREADcommandisregisteredatT0andthelatency is programmedtotwoclocks,theDQs willstart driving afterT1andthedatawillbevalidbyT2,asshowninCAS Latency diagrams.The Allowable Operating Frequency tableindicatestheoperatingfrequenciesatwhicheach CAS latency setting can be used. Reservedstatesshouldnotbeusedasunknownoperation or incompatibility with future versions may result.
Operating Mode
ThenormaloperatingmodeisselectedbysettingM7andM8 tozero;theothercombinationsofvaluesforM7andM8are reservedforfutureuseand/ortestmodes.Theprogrammed burstlengthappliestobothREADandWRITEbursts. Testmodesandreservedstatesshouldnotbeusedbecause unknown operation or incompatibility with future versions may result.
Write Burst Mode
WhenM9=0,theburstlengthprogrammedviaM0-M2 appliestobothREADandWRITEbursts;whenM9=1, theprogrammedburstlengthappliestoREADbursts,but writeaccessesaresingle-location(nonburst)accesses.
CAS Latency Allowable Operating Frequency (MHz)
Speed -6 -7 -75E CAS Latency = 2 100 100 133 CAS Latency = 3 166 143 --
CAS LATENCY
T0 CLK T1 T2 T3
COMMAND DQ
READ
NOP tAC
NOP DOUT
tLZ CAS Latency - 2
tOH
T0 CLK
T1
T2
T3
T4
COMMAND DQ
READ
NOP
NOP tAC
NOP DOUT
tLZ CAS Latency - 3
tOH DON'T CARE UNDEFINED
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IS42S32800D, IS45S32800D
CHIP OPERATION BANK/ROW ACTIVATION
Before any READ orWRITE commands can be issued toabankwithintheSDRAM,arowinthatbankmustbe "opened."ThisisaccomplishedviatheACTIVEcommand, which selects both the bank and the row to be activated (see ActivatingSpecificRowWithinSpecificBank). After opening a row (issuinganACTIVEcommand),aREAD orWRITEcommandmaybeissuedtothatrow,subjectto the trcdspecification.Minimumtrcd should be divided by theclockperiodandroundeduptothenextwholenumber to determine the earliest clock edge after the ACTIVE commandonwhichaREADorWRITEcommandcanbe entered.Forexample,atrcdspecificationof18nswitha 125MHzclock(8nsperiod)resultsin2.25clocks,rounded to3.Thisisreflectedinthefollowingexample,whichcoversanycasewhere2<[trcd(MIN)/tck] 3.(Thesame procedure is used to convert other specification limits from timeunitstoclockcycles). AsubsequentACTIVEcommandtoadifferentrowinthe same bank can only be issued after the previous active rowhasbeen"closed"(precharged).Theminimumtime interval between successive ACTIVE commands to the same bank is defined by trc. AsubsequentACTIVEcommandtoanotherbankcanbe issued while the first bank is being accessed, which results inareductionoftotalrow-accessoverhead.Theminimum timeintervalbetweensuccessiveACTIVEcommandsto different banks is defined by trrd.
ACTIVATING SPECIFIC ROW WITHIN SPECIFIC BANK
CLK HIGH CKE CS RAS CAS WE A0-A11 BA0, BA1 ROW ADDRESS BANK ADDRESS
EXAMPLE: MEETING TRCD (MIN) WHEN 2 < [TRCD (MIN)/TCK] 3
T0 CLK
T1
T2
T3
T4
COMMAND
ACTIVE
NOP tRCD
NOP
READ or WRITE
DON'T CARE
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READS
READ bursts are initiated with a READ command, as shownintheREADCOMMANDdiagram. Thestartingcolumnandbankaddressesareprovidedwith theREADcommand,andautoprechargeiseitherenabledor disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of theburst.ForthegenericREADcommandsusedinthefollowing illustrations, auto precharge is disabled. DuringREADbursts,thevaliddata-outelementfromthe starting column address will be available following the CASlatencyaftertheREADcommand.Eachsubsequent data-outelementwillbevalidbythenextpositiveclock edge.The CAS Latency diagram shows general timing for each possible CAS latency setting. Uponcompletionofaburst,assumingnoothercommands havebeeninitiated,theDQswillgoHigh-Z.Afull-pageburst will continue until terminated. (At the end of the page, it will wraptocolumn0andcontinue.) DatafromanyREADburstmaybetruncatedwithasubsequentREADcommand,anddatafromafixed-length READburstmaybeimmediatelyfollowedbydatafroma READcommand.Ineithercase,acontinuousflowofdata canbemaintained.Thefirstdataelementfromthenew burst follows either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. ThenewREADcommandshouldbeissuedx cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one.This isshowninConsecutiveREADBurstsforCASlatencies oftwoandthree;dataelementn + 3 is either the last of aburstoffourorthelastdesiredofalongerburst.The SDRAMusesapipelinedarchitectureandthereforedoes notrequirethe2n rule associated with a prefetch architecture.AREADcommandcanbeinitiatedonanyclockcycle followingapreviousREADcommand.Full-speedrandom read accesses can be performed to the same bank, as showninRandomREADAccesses,oreachsubsequent READmaybeperformedtoadifferentbank. DatafromanyREADburstmaybetruncatedwithasubsequent WRITE command, and data from a fixed-length READburstmaybeimmediatelyfollowedbydatafroma WRITEcommand(subjecttobusturnaroundlimitations). TheWRITEburstmaybeinitiatedontheclockedgeimmediatelyfollowingthelast(orlastdesired)dataelement fromtheREADburst,providedthatI/Ocontentioncanbe avoided. In a given system design, there may be a possibilitythatthedevicedrivingtheinputdatawillgoLow-Z beforetheSDRAMDQsgoHigh-Z.Inthiscase,atleast a single-cycle delay should occur between the last read dataandtheWRITEcommand.
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READ COMMAND
CLK CKE CS RAS CAS WE A0-A8 A9, A11
AUTO PRECHARGE COLUMN ADDRESS HIGH
A10
NO PRECHARGE
BA0, BA1
BANK ADDRESS
TheDQMinputisusedtoavoidI/Ocontention,asshown inFiguresRW1andRW2.TheDQMsignalmustbeasserted (HIGH) at least three clocks prior to theWRITE command(DQMlatencyistwoclocksforoutputbuffers) to suppress data-out from the READ. Once theWRITE commandisregistered,theDQswillgoHigh-Z(orremain High-Z),regardlessofthestateoftheDQMsignal,provided theDQMwasactiveontheclockjustpriortotheWRITE commandthattruncatedtheREADcommand.Ifnot,the secondWRITEwillbeaninvalidWRITE.Forexample,if DQMwasLOWduringT4inFigureRW2,thentheWRITEs atT5andT7wouldbevalid,whiletheWRITEatT6would be invalid. TheDQMsignalmustbede-assertedpriortotheWRITE command(DQMlatencyiszeroclocksforinputbuffers) to ensure that the written data is not masked. Afixed-lengthREADburstmaybefollowedby,ortruncated with, a PRECHARGE command to the same bank (provided thatautoprechargewasnotactivated), and a full-page burst maybetruncatedwithaPRECHARGEcommandtothe samebank.ThePRECHARGEcommandshouldbeissued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minusone.ThisisshownintheREADtoPRECHARGE
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IS42S32800D, IS45S32800D
diagramforeachpossibleCASlatency;dataelementn + 3 is either the last of a burst of four or the last desired of alongerburst.FollowingthePRECHARGEcommand,a subsequentcommandtothesamebankcannotbeissued until trpismet.Notethatpartoftherowprechargetimeis hiddenduringtheaccessofthelastdataelement(s). In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burstwithautoprecharge.ThedisadvantageofthePRECHARGEcommandisthatitrequiresthatthecommand and address buses be available at the appropriate time to issuethecommand;theadvantageofthePRECHARGE commandisthatitcanbeusedtotruncatefixed-length or full-page bursts. Full-pageREADburstscanbetruncatedwiththeBURST TERMINATE command, and fixed-length READ bursts maybetruncatedwithaBURSTTERMINATEcommand, providedthatautoprechargewasnotactivated.TheBURST TERMINATEcommandshouldbeissuedx cycles before the clock edge at which the last desired data element is valid, where x equalstheCASlatencyminusone.Thisis shownintheREADBurstTerminationdiagramforeach possibleCASlatency;dataelementn + 3 is the last desired data element of a longer burst.
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RW1 - READ to WRITE
T0 CLK
T1
T2
T3
T4
T5
T6
DQM
COMMAND
READ
NOP
NOP
NOP
NOP
NOP
WRITE
ADDRESS
BANK, COL n
BANK, COL b
tHZ DQ CAS Latency - 2 DON'T CARE DOUT n
DOUT n+1 DOUT n+2
DIN b tDS
RW2 - READ to WRITE
T0 CLK
T1
T2
T3
T4
T5
DQM
COMMAND
READ
NOP
NOP
NOP
NOP
WRITE
ADDRESS
BANK, COL n
BANK, COL b
DQ CAS Latency - 3
tHZ DOUT n
DIN b tDS DON'T CARE
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CONSECUTIVE READ BURSTS
T0 CLK
T1
T2
T3
T4
T5
T6
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
ADDRESS
BANK, COL n
BANK, COL b
DQ CAS Latency - 2
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
DOUT b DON'T CARE
T0 CLK
T1
T2
T3
T4
T5
T6
T7
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
ADDRESS
BANK, COL n
BANK, COL b
DQ CAS Latency - 3
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
DOUT b DON'T CARE
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IS42S32800D, IS45S32800D
RANDOM READ ACCESSES
T0 CLK
T1
T2
T3
T4
T5
COMMAND
READ
READ
READ
READ
NOP
NOP
ADDRESS
BANK, COL n
BANK, COL b
BANK, COL m
BANK, COL x
DQ CAS Latency - 2
DOUT n
DOUT b
DOUT m
DOUT x DON'T CARE
T0 CLK
T1
T2
T3
T4
T5
T6
COMMAND
READ
READ
READ
READ
NOP
NOP
NOP
ADDRESS
BANK, COL n
BANK, COL b
BANK, COL m
BANK, COL x
DQ CAS Latency - 3
DOUT n
DOUT b
DOUT m
DOUT x DON'T CARE
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READ BURST TERMINATION
T0 CLK
T1
T2
T3
T4
T5
T6
COMMAND
READ
NOP
NOP
NOP
BURST TERMINATE
NOP
NOP
x = 1 cycle
ADDRESS
BANK a, COL n
DQ CAS Latency - 2
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3 DON'T CARE
T0 CLK
T1
T2
T3
T4
T5
T6
T7
COMMAND
READ
NOP
NOP
NOP
BURST TERMINATE
NOP x = 2 cycles
NOP
NOP
ADDRESS
BANK, COL n
DQ CAS Latency - 3
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3 DON'T CARE
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ALTERNATING BANK READ ACCESSES
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 ROW tAS tAH ROW tAS tAH BANK 0 BANK 0 tLZ DQ tAC tRCD - BANK 0 tRRD tRAS - BANK 0 tRC - BANK 0 DON'T CARE CAS Latency - BANK 0 tRCD - BANK 3 COLUMN m(2) ENABLE AUTO PRECHARGE ROW BANK 3 tOH DOUT m tAC tOH DOUT m+1 tAC BANK 3 tOH DOUT m+2 tAC tRP - BANK 0 CAS Latency - BANK 3 tOH DOUT m+3 tAC ROW COLUMN b(2) ENABLE AUTO PRECHARGE ROW BANK 0 tOH DOUT b tAC tRCD - BANK 0 ROW ACTIVE NOP READ tCMS tCMH NOP ACTIVE NOP READ NOP ACTIVE T1 T2 T3 T4 T5 T6 T7 T8
tCK
tCL
tCH
Notes: 1) CAS latency = 2, Burst Length = 4 2) x32: A9, A11 = "Don't Care"
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IS42S32800D, IS45S32800D
READ - FULL-PAGE BURST
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 DQ tRCD ROW tAS tAH ROW tAS tAH BANK BANK tAC tLZ CAS Latency DOUT m tAC tAC DOUT m+1 tAC DOUT m+2 tOH tAC DOUT m-1 tOH tAC DOUT m tOH tHZ DOUT m+1 tOH DON'T CARE Full page Full-page burst not self-terminating. completion Use BURST TERMINATE command. UNDEFINED COLUMN m(2)
ACTIVE NOP READ NOP NOP NOP NOP NOP BURST TERM NOP NOP
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
Tn+1
Tn+2
Tn+3
Tn+4
tCMS tCMH
tOH tOH each row (x4) has 1,024 locations
Notes: 1) CAS latency = 2, Burst Length = Full Page 2) x32: A9, A11 = "Don't Care"
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READ - DQM OPERATION
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 DQ ROW tAS tAH ROW tAS tAH BANK ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
NOP
READ tCMS tCMH
NOP
NOP
NOP
NOP
NOP
NOP
COLUMN m(2)
ENABLE AUTO PRECHARGE
DISABLE AUTO PRECHARGE
BANK tAC tLZ tRCD CAS Latency tOH DOUT m tHZ tLZ tAC tOH DOUT m+2 tAC tOH DOUT m+3 tHZ DON'T CARE UNDEFINED
Notes: 1) CAS latency = 2, Burst Length = 4 2) x32: A9, A11 = "Don't Care"
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READ to PRECHARGE
T0 CLK
T1
T2
T3
T4
T5 tRP
T6
T7
COMMAND
READ
NOP
NOP
NOP
PRECHARGE
NOP
ACTIVE
NOP
ADDRESS
BANK a, COL n
BANK (a or all)
BANK a, ROW
tRQL DQ CAS Latency - 2 DOUT n DOUT n+1 DOUT n+2 DOUT n+3
High-Z
DON'T CARE
T0 CLK
T1
T2
T3
T4
T5 tRP
T6
T7
COMMAND
READ
NOP
NOP
NOP
PRECHARGE
NOP
NOP
ACTIVE
ADDRESS
BANK, COL n
BANK, COL b
BANK a, ROW
tRQL DQ CAS Latency - 3 DOUT n DOUT n+1 DOUT n+2 DOUT n+3
High-Z
DON'T CARE
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IS42S32800D, IS45S32800D
WRITES
WRITEburstsareinitiatedwithaWRITEcommand,as showninWRITECommanddiagram. AnexampleisshowninWRITEtoWRITEdiagram.Datan + 1 is either the last of a burst of two or the last desired of alongerburst.TheSDRAMusesapipelinedarchitecture andthereforedoesnotrequirethe2n rule associated with aprefetcharchitecture.AWRITEcommandcanbeinitiated onanyclockcyclefollowingapreviousWRITEcommand. Full-speedrandomwriteaccesseswithinapagecanbe performedtothesamebank,asshowninRandomWRITE Cycles,oreachsubsequentWRITEmaybeperformedto a different bank. DataforanyWRITEburstmaybetruncatedwithasubsequentREADcommand,anddataforafixed-lengthWRITE burstmaybeimmediatelyfollowedbyasubsequentREAD command.OncetheREADcommandisregistered,the datainputswillbeignored,andWRITEswillnotbeexecuted.AnexampleisshowninWRITEtoREAD.Datan + 1 is either the last of a burst of two or the last desired of a longer burst. Data for a fixed-length WRITE burst may be followed by, or truncated with, a PRECHARGE command to the same bank (provided that auto precharge was not activated), and a full-pageWRITE burst may be truncated with a PRECHARGE command to the same bank.The PRECHARGEcommandshouldbeissuedtdpl after the clock edge at which the last desired input data element isregistered.Theautoprechargemoderequiresatdpl of atleastoneclockplustime,regardlessoffrequency.In addition,whentruncatingaWRITEburst,theDQMsignal must be used to mask input data for the clock edge prior to,andtheclockedgecoincidentwith,thePRECHARGE command.AnexampleisshownintheWRITEtoPRECHARGEdiagram.Datan+1 is either the last of a burst oftwoorthelastdesiredofalongerburst.Followingthe PRECHARGEcommand,asubsequentcommandtothe same bank cannot be issued until trp is met. Inthecaseofafixed-lengthburstbeingexecutedtocompletion, a PRECHARGE command issued at the optimum time (asdescribedabove) provides the same operation that wouldresultfromthesamefixed-lengthburstwithauto precharge.ThedisadvantageofthePRECHARGE command isthatitrequiresthatthecommandandaddressbusesbe availableattheappropriatetimetoissuethecommand;the advantageofthePRECHARGEcommandisthatitcanbe usedtotruncatefixed-lengthorfull-pagebursts. Fixed-lengthorfull-pageWRITEburstscanbetruncated withtheBURSTTERMINATEcommand.WhentruncatingaWRITEburst,theinputdataappliedcoincidentwith theBURSTTERMINATEcommandwillbeignored.The lastdatawritten(providedthatDQMisLOWatthattime) will be the input data applied one clock previous to the BURSTTERMINATEcommand.ThisisshowninWRITE BurstTermination,wheredatan is the last desired data element of a longer burst. 37
WRITE COMMAND
CLK CKE CS RAS CAS WE A0-A8 A9, A11
AUTO PRECHARGE COLUMN ADDRESS HIGH
A10
NO PRECHARGE
BA0, BA1
BANK ADDRESS
Thestartingcolumnandbankaddressesareprovidedwith theWRITEcommand,andautoprechargeiseitherenabled or disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of theburst.ForthegenericWRITEcommandsusedinthe following illustrations, auto precharge is disabled. DuringWRITEbursts,thefirstvaliddata-in element will be registered coincident with the WRITEcommand.Subsequent data elements will be registered on each successive positiveclockedge.Uponcompletionofafixed-lengthburst, assuming no other commands have been initiated, the DQswillremainHigh-Zandanyadditionalinputdatawill beignored(seeWRITEBurst).Afull-pageburstwillcontinue until terminated. (At the end of the page, it will wrap tocolumn0andcontinue.) DataforanyWRITEburstmaybetruncatedwithasubsequentWRITEcommand,anddataforafixed-lengthWRITE burst may be immediately followed by data for a WRITE command. The new WRITE command can be issued on anyclockfollowingthepreviousWRITEcommand,andthe data provided coincident with the new command applies to the new command.
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WRITE BURST
T0 CLK T1 T2 T3
COMMAND
WRITE
NOP
NOP
NOP
ADDRESS
BANK, COL n
DQ
DIN n
DIN n+1 DON'T CARE
WRITE TO WRITE
T0 CLK T1 T2
COMMAND
WRITE
NOP
WRITE
ADDRESS
BANK, COL n
BANK, COL b
DQ
DIN n
DIN n+1
DIN b DON'T CARE
RANDOM WRITE CYCLES
T0 CLK T1 T2 T3
COMMAND
WRITE
WRITE
WRITE
WRITE
ADDRESS
BANK, COL n
BANK, COL b
BANK, COL m
BANK, COL x
DQ
DIN n
DIN b
DIN m
DIN x
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WRITE to READ
T0 CLK
T1
T2
T3
T4
T5
COMMAND
WRITE
NOP
READ
NOP
NOP
NOP
ADDRESS
BANK, COL n
BANK, COL b
DQ
DIN n
DIN n+1 CAS Latency - 2
DOUT b
DOUT b+1 DON'T CARE
WP1 - WRITE to PRECHARGE
T0 CLK T1 T2 T3 T4 T5 T6
DQM tRP COMMAND WRITE NOP NOP
PRECHARGE
NOP
ACTIVE
NOP
ADDRESS
BANK a, COL n
BANK (a or all)
BANK a, ROW
tDPL DQ DIN n DIN n+1 DIN n+2 DON'T CARE
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WP2 - WRITE to PRECHARGE
T0 CLK T1 T2 T3 T4 T5 T6
DQM tRP COMMAND WRITE NOP NOP
PRECHARGE
NOP
NOP
ACTIVE
ADDRESS
BANK a, COL n
BANK (a or all)
BANK a, ROW
tDPL DQ DIN n DIN n+1 DON'T CARE
WRITE Burst Termination
T0 CLK
T1
T2
COMMAND
WRITE
BURST TERMINATE
NEXT COMMAND
ADDRESS
BANK, COL n
(ADDRESS)
DQ
DIN n
(DATA) DON'T CARE
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WRITE - FULL PAGE BURST
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 DQ tRCD ROW tAS tAH ROW tAS tAH BANK BANK tDS tDH DIN m tDS tDH DIN m+1 tDS tDH DIN m+2 tDS tDH tDS tDH tDS tDH DIN m+3 DIN m-1 DON'T CARE COLUMN m(2)
ACTIVE NOP WRITE NOP NOP NOP NOP BURST TERM NOP
T1 tCK tCL
T2 tCH
T3
T4
T5
Tn+1
Tn+2
tCMS tCMH
Full page completed
Notes: 1) Burst Length = Full Page 2) x32: A9, A11 = "Don't Care"
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WRITE - DQM OPERATION
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 DQ ROW tAS tAH ROW tAS tAH BANK ACTIVE tCK
T1 tCL
T2 tCH
T3
T4
T5
T6
T7
NOP
WRITE tCMS tCMH
NOP
NOP
NOP
NOP
NOP
COLUMN m(2)
ENABLE AUTO PRECHARGE
DISABLE AUTO PRECHARGE
BANK tDS tDH tDS tDH DIN m+2 tDS tDH DIN m tRCD DIN m+3 DON'T CARE
Notes: 1) Burst Length = 4 2) x32: A9, A11 = "Don't Care"
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ALTERNATING BANK WRITE ACCESSES
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 ROW tAS tAH ROW tAS tAH BANK 0 ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
T9
NOP
WRITE tCMS tCMH
NOP
ACTIVE
NOP
WRITE
NOP
NOP
ACTIVE
COLUMN m(2) ENABLE AUTO PRECHARGE
ROW ROW
COLUMN b(2) ENABLE AUTO PRECHARGE
ROW ROW
BANK 0 tDS tDH tDS tDH DIN m+1
BANK 1 tDS tDH DIN m+2 tDS tDH
BANK 1 tDS tDH DIN b tDS tDH tDS tDH
BANK 0 tDS tDH
DQ tRCD - BANK 0 tRRD tRAS - BANK 0 tRC - BANK 0
DIN m
DIN m+3
DIN b+1
DIN b+2
DIN b+3 tRCD - BANK 0 tDPL - BANK 1
tDPL - BANK 0 tRCD - BANK 1
tRP - BANK 0
DON'T CARE
Notes: 1) Burst Length = 4 2) x32: A9, A11 = "Don't Care"
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IS42S32800D, IS45S32800D
CLOCK SUSPEND
Clock suspend mode occurs when a column access/burst isinprogressandCKEisregisteredLOW.Intheclock suspendmode,theinternalclockisdeactivated,"freezing" the synchronous logic. ForeachpositiveclockedgeonwhichCKEissampled LOW,thenextinternalpositiveclockedgeissuspended. Any command or data present on the input pins at the time ofasuspendedinternalclockedgeisignored;anydata presentontheDQpinsremainsdriven;andburstcounters are not incremented, as long as the clock is suspended. (Seefollowingexamples.) ClocksuspendmodeisexitedbyregisteringCKEHIGH; the internal clock and related operation will resume on the subsequentpositiveclockedge.
Clock Suspend During WRITE Burst
T0 CLK T1 T2 T3 T4 T5
CKE INTERNAL CLOCK COMMAND NOP WRITE NOP NOP
ADDRESS
BANK a, COL n
DQ
DIN n
DIN n+1
DIN n+2 DON'T CARE
Clock Suspend During READ Burst
T0 CLK T1 T2 T3 T4 T5 T6
CKE INTERNAL CLOCK COMMAND READ NOP NOP NOP NOP NOP
ADDRESS
BANK a, COL n
DQ
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
DON'T CARE
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CLOCK SUSPEND MODE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 tAS tAH BA0, BA1 BANK tAC DQ tLZ DOUT m tOH DON'T CARE UNDEFINED tAC tHZ DOUT m+1 BANK tDS tDH DIN e DIN e+1 COLUMN m(2) tAS tAH COLUMN n(2) READ NOP tCMS tCMH NOP NOP NOP NOP WRITE NOP tCK T1 tCL T2 tCH T3 T4 T5 T6 T7 T8 T9
tCKS tCKH
Notes: 1) CAS latency = 3, Burst Length = 2, Auto Precharge is disabled. 2) x32: A9, A11 = "Don't Care"
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IS42S32800D, IS45S32800D
PRECHARGE
ThePRECHARGEcommand(seefigure)isusedtodeactivate the open row in a particular bank or the open row in allbanks.Thebank(s)willbeavailableforasubsequentrow access some specified time (trp)afterthePRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only onebankistobeprecharged,inputsBA0,BA1selectthe bank.Whenallbanksaretobeprecharged,inputsBA0, BA1aretreatedas"Don'tCare."Onceabankhasbeen precharged, it is in the idle state and must be activated priortoanyREADorWRITEcommandsbeingissuedto that bank.
PRECHARGE Command
CLK CKE CS RAS CAS WE A0-A9, A11
ALL BANKS HIGH
POWER-DOWN
Power-downoccursifCKEisregisteredLOWcoincident withaNOPorCOMMANDINHIBITwhennoaccesses are in progress. If power-down occurs when all banks are idle,thismodeisreferredtoasprechargepower-down; if power-down occurs when there is a row active in either bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers,excludingCKE,formaximumpowersavingswhile instandby.Thedevicemaynotremaininthepower-down statelongerthantherefreshperiod(64ms)sincenorefresh operations are performed in this mode. Thepower-downstateisexitedbyregisteringaNOPor COMMANDINHIBITandCKEHIGHatthedesiredclock edge (meeting tcks).Seefigurebelow(Power-Down).
A10
BANK SELECT
BA0, BA1
BANK ADDRESS
POWER-DOWN
CLK tCKS CKE tCKS
COMMAND
NOP Input buffers gated off
NOP
ACTIVE tRCD tRAS tRC DON'T CARE
All banks idle
Enter power-down mode
Exit power-down mode
less than TREF
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POWER-DOWN MODE CYCLE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 PRECHARGE tCK
T1 tCL
T2 tCH tCKS
Tn+1 tCKS
Tn+2
NOP
NOP
NOP
ACTIVE
A0-A9, A11 ALL BANKS A10 SINGLE BANK tAS tAH BA0, BA1 BANK
ROW ROW
BANK
DQ High-Z Two clock cycles Precharge all active banks All banks idle, enter power-down mode Input buffers gated off while in power-down mode All banks idle
Exit power-down mode
DON'T CARE
Note: x32: A9, A11 = "Don't Care"
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BURST READ/SINGLE WRITE
Theburstread/singlewritemodeisenteredbyprogramming the write burst mode bit (M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the access ofasinglecolumnlocation(burstofone),regardlessof theprogrammedburstlength.READcommandsaccess columns according to the programmed burst length and sequence,justasinthenormalmodeofoperation(M9 =0). SDRAMssupportCONCURRENTAUTOPRECHARGE. FourcaseswhereCONCURRENTAUTOPRECHARGE occurs are defined below.
READ with Auto Precharge
1.InterruptedbyaREAD(withorwithoutautoprecharge): AREADtobankmwillinterruptaREADonbankn, CAS latency later.The PRECHARGE to bank n will beginwhentheREADtobankmisregistered. 2.InterruptedbyaWRITE(withorwithoutautoprecharge): AWRITEtobankmwillinterruptaREADonbankn whenregistered.DQMshouldbeusedthreeclocksprior totheWRITEcommandtopreventbuscontention.The PRECHARGEtobanknwillbeginwhentheWRITEto bank m is registered.
CONCURRENT AUTO PRECHARGE
Anaccesscommand(READorWRITE)toanotherbank while an access command with auto precharge enabled is executingisnotallowedbySDRAMs,unlesstheSDRAM supports CONCURRENT AUTO PRECHARGE. ISSI
READ With Auto Precharge interrupted by a READ
T0 CLK COMMAND BANK n NOP
READ - AP BANK n
T1
T2
T3
T4
T5
T6
T7
NOP
READ - AP BANK m
NOP
NOP
NOP
NOP
Page Active
READ with Burst of 4
Interrupt Burst, Precharge tRP - BANK n
Idle tRP - BANK m Precharge
Internal States
BANK m ADDRESS DQ CAS Latency - 3 (BANK n) Page Active
BANK n, COL a BANK n, COL b
READ with Burst of 4
DOUT a
DOUT a+1
DOUT b
DOUT b+1 DON'T CARE
CAS Latency - 3 (BANK m)
READ With Auto Precharge interrupted by a WRITE
T0 CLK COMMAND BANK n
READ - AP BANK n
T1
T2
T3
T4
T5
T6
T7
NOP
NOP
NOP
WRITE - AP BANK m
NOP
NOP
NOP Idle tDPL - BANK m Write-Back
READ with Burst of 4 Page Active Page Active
BANK n, COL a BANK m, COL b
Interrupt Burst, Precharge tRP - BANK n WRITE with Burst of 4
Internal States
BANK m ADDRESS DQM DQ
DOUT a CAS Latency - 3 (BANK n)
DIN b
DIN b+1
DIN b+2
DIN b+3 DON'T CARE
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WRITE with Auto Precharge
3.InterruptedbyaREAD(withorwithoutautoprecharge): AREADtobankmwillinterruptaWRITEonbanknwhen registered, with the data-out appearing (CAS latency) later.ThePRECHARGEtobanknwillbeginaftertdpl is met, where tdplbeginswhentheREADtobankmis registered.ThelastvalidWRITE to bank n will be data-in registeredoneclockpriortotheREADtobankm. 4.InterruptedbyaWRITE(withorwithoutautoprecharge): AWRITE to bank m will interrupt a WRITE on bank n when registered.ThePRECHARGEtobanknwillbeginafter tdpl is met, where tdplbeginswhentheWRITEtobank misregistered.ThelastvaliddataWRITEtobankn willbedataregisteredoneclockpriortoaWRITEto bank m.
WRITE With Auto Precharge interrupted by a READ
T0 CLK T1 T2 T3 T4 T5 T6 T7
COMMAND
NOP
WRITE - AP BANK n
NOP
READ - AP BANK m
NOP
NOP
NOP
NOP
BANK n
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back tDPL - BANK n
Precharge tRP - BANK n tRP - BANK m Precharge
Internal States
BANK m Page Active
BANK n, COL a BANK m, COL b
READ with Burst of 4
ADDRESS
DQ
DIN a
DIN a+1 CAS Latency - 3 (BANK m)
DOUT b
DOUT b+1 DON'T CARE
WRITE With Auto Precharge interrupted by a WRITE
T0 CLK T1 T2 T3 T4 T5 T6 T7
COMMAND
NOP
WRITE - AP BANK n
NOP
NOP
WRITE - AP BANK m
NOP
NOP
NOP
BANK n
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back tDPL - BANK n
Precharge tRP - BANK n tDPL - BANK m Write-Back
Internal States
BANK m Page Active
BANK n, COL a BANK m, COL b
WRITE with Burst of 4
ADDRESS
DQ
DIN a
DIN a+1
DIN a+2
DIN b
DIN b+1
DIN b+2
DIN b+3 DON'T CARE
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SINGLE READ WITHOUT AUTO PRECHARGE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 DQ ROW tAS tAH ROW tAS tAH BANK ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
NOP
READ tCMS tCMH
NOP
NOP
PRECHARGE
NOP
ACTIVE
NOP
COLUMN m(2) ALL BANKS
ROW ROW
DISABLE AUTO PRECHARGE BANK tAC tLZ CAS Latency tOH DOUT m tRCD tRAS tRC tHZ
SINGLE BANK BANK BANK
DON'T CARE tRP UNDEFINED
Notes: 1) CAS latency = 2, Burst Length = 1 2) x32: A9, A11 = "Don't Care"
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SINGLE READ WITH AUTO PRECHARGE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS A0-A9, A11 A10 BA0, BA1 DQ tAH
ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
READ
NOP
NOP
ACTIVE
NOP
tCMS tCMH
ROW tAS tAH ROW tAS tAH BANK
COLUMN m(2) ENABLE AUTO PRECHARGE
ROW ROW
BANK tAC tOH DOUT m tRCD tRAS tRC CAS Latency tRP tHZ
BANK
DON'T CARE UNDEFINED
Notes: 1) CAS latency = 2, Burst Length = 1 2) x32: A9, A11 = "Don't Care"
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
51
IS42S32800D, IS45S32800D
READ WITHOUT AUTO PRECHARGE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 DQ ROW tAS tAH ROW tAS tAH BANK ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
NOP
READ tCMS tCMH
NOP
NOP
NOP
PRECHARGE
NOP
ACTIVE
COLUMN m(2) ALL BANKS
ROW ROW
DISABLE AUTO PRECHARGE BANK tAC tLZ CAS Latency tAC DOUT m tOH tAC DOUT m+1 tOH
SINGLE BANK BANK tAC DOUT m+2 tOH tRP tHZ DOUT m+3 tOH DON'T CARE UNDEFINED BANK
tRCD tRAS tRC
Notes: 1) CAS latency = 2, Burst Length = 4 2) x32: A9, A11 = "Don't Care"
52
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
IS42S32800D, IS45S32800D
READ WITH AUTO PRECHARGE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 DQ ROW tAS tAH ROW tAS tAH BANK ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
NOP
READ tCMS tCMH
NOP
NOP
NOP
NOP
NOP
ACTIVE
COLUMN m(2) ENABLE AUTO PRECHARGE
ROW ROW
BANK tAC tLZ CAS Latency tAC DOUT m tOH tAC DOUT m+1 tOH tAC DOUT m+2 tOH tRP tHZ DOUT m+3 tOH
BANK
tRCD tRAS tRC
DON'T CARE UNDEFINED
Notes: 1) CAS latency = 2, Burst Length = 4 2) x32: A9, A11 = "Don't Care"
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
53
IS42S32800D, IS45S32800D
SINGLE WRITE - WITHOUT AUTO PRECHARGE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 ROW tAS tAH ROW tAS tAH BANK ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
NOP
WRITE tCMS tCMH
NOP
NOP
PRECHARGE
NOP
ACTIVE
NOP
COLUMN m(2)
DISABLE AUTO PRECHARGE
ROW
ALL BANKS
ROW
SINGLE BANK
BANK tDS tDH
BANK
BANK
DQ tRCD tRAS tRC
DIN m tDPL(3) tRP DON'T CARE
Notes: 1) Burst Length = 1 2) x32: A9, A11 = "Don't Care" 3) tras must not be violated.
54
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
IS42S32800D, IS45S32800D
SINGLE WRITE WITH AUTO PRECHARGE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0-DQM3 A0-A9, A11 A10 BA0, BA1 tAS tAH ROW tAS tAH ROW tAS tAH BANK ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
T9
NOP
NOP
NOP
WRITE tCMS tCMH
NOP
NOP
NOP
ACTIVE
NOP
COLUMN m(2) ENABLE AUTO PRECHARGE
ROW ROW
BANK tDS tDH
BANK
DQ tRCD tRAS tRC
DIN m tDPL tRP DON'T CARE
Notes: 1) Burst Length = 1 2) x32: A9, A11 = "Don't Care"
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
55
IS42S32800D, IS45S32800D
WRITE - WITHOUT AUTO PRECHARGE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 ROW tAS tAH ROW tAS tAH BANK ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
NOP
WRITE tCMS tCMH
NOP
NOP
NOP
PRECHARGE
NOP
ACTIVE
COLUMN m(2) ALL BANKS
ROW ROW
DISABLE AUTO PRECHARGE BANK tDS tDH tDS tDH DIN m+1 tDS tDH DIN m+2 tDS tDH
SINGLE BANK BANK BANK
DQ tRCD tRAS tRC
DIN m
DIN m+3 tDPL(3) tRP
DON'T CARE
Notes: 1) Burst Length = 4 2) x32: A9, A11 = "Don't Care" 3) tras must not be violated.
56
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
IS42S32800D, IS45S32800D
WRITE - WITH AUTO PRECHARGE
T0 CLK tCKS tCKH CKE tCMS tCMH COMMAND DQM0 - DQM3 tAS tAH A0-A9, A11 A10 BA0, BA1 ROW tAS tAH ROW tAS tAH BANK ACTIVE
tCK
T1
tCL
T2
tCH
T3
T4
T5
T6
T7
T8
T9
NOP
WRITE tCMS tCMH
NOP
NOP
NOP
NOP
NOP
NOP
ACTIVE
COLUMN m(2) ENABLE AUTO PRECHARGE
ROW ROW
BANK tDS tDH tDS tDH DIN m+1 tDS tDH DIN m+2 tDS tDH
BANK
DQ tRCD tRAS tRC
DIN m
DIN m+3 tDPL tRP
DON'T CARE
Notes: 1) Burst Length = 4 2) x32: A9, A11 = "Don't Care"
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
57
IS42S32800D, IS45S32800D
ORDERING INFORMATION - VDD = 3.3V Commercial Range: 0C to +70C
Frequency 166MHz 166MHz 166MHz 143MHz 143MHz 143MHz 133MHz 133MHz 133MHz Speed (ns) 6 6 6 7 7 7 7.5 7.5 7.5 Order Part No. IS42S32800D-6TL IS42S32800D-6B IS42S32800D-6BL IS42S32800D-7TL IS42S32800D-7B IS42S32800D-7BL IS42S32800D-75ETL IS42S32800D-75EBL IS42S32800D-75EB Package 86-PinTSOP-II,Lead-free 90-BallTF-BGA 90-BallTF-BGA,Lead-free 86-PinTSOP-II,Lead-free 90-BallTF-BGA 90-BallTF-BGA,Lead-free 86-PinTSOP-II,Lead-free 90-BallTF-BGA,Lead-free 90-BallTF-BGA
Industrial Range: -40C to +85C
Frequency 166MHz 166MHz 166MHz 143MHz 143MHz 143MHz 133MHz 133MHz 133MHz Speed (ns) 6 6 6 7 7 7 7.5 7.5 7.5 Order Part No. IS42S32800D-6TLI IS42S32800D-6BI IS42S32800D-6BLI IS42S32800D-7TLI IS42S32800D-7BI IS42S32800D-7BLI IS42S32800D-75ETLI IS42S32800D-75EBLI IS42S32800D-75EBI Package 86-PinTSOP-II,Lead-free 90-BallTF-BGA 90-BallTF-BGA,Lead-free 86-PinTSOP-II,Lead-free 90-BallTF-BGA 90-BallTF-BGA,Lead-free 86-PinTSOP-II,Lead-free 90-BallTF-BGA,Lead-free 90-BallTF-BGA
Automotive Range: -40C to +85C
Frequency 166MHz 166MHz 143MHz 143MHz 143MHz Speed (ns) 6 6 7 7 7 Order Part No. IS45S32800D-6TLA1 IS45S32800D-6BLA1 IS45S32800D-7TLA1 IS45S32800D-7BA1 IS45S32800D-7BLA1 Package 86-PinTSOP-II,Lead-free 90-BallTF-BGA,Lead-free 86-PinTSOP-II,Lead-free 90-BallTF-BGA 90-BallTF-BGA,Lead-free
Automotive Range: -40C to +105C
Frequency Speed (ns) Order Part No. 143MHz 7 IS45S32800D-7TLA2 143MHz 7 IS45S32800D-7BLA2 *ContactProductManagerforleadedpartsupport. Package 86-PinTSOPII,Lead-free 90-BallTF-BGA,Lead-free
58
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
IS42S32800D, IS45S32800D
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
NOTE :
1. Controlling dimension : mm 2. Dimension D and E1 do not include mold protrusion . 3. Dimension b does not include dambar protrusion/intrusion. 4. Formed leads shall be planar with respect to one another within 0.1mm at the seating plane after final test.
Package Outline
09/26/2006
59
IS42S32800D, IS45S32800D
D1
60
NOTE :
1. CONTROLLING DIMENSION : MM . 2. Reference document : JEDEC MO-207
0.80
0.45
Integrated Silicon Solution, Inc. - www.issi.com Rev. B 03/27/09
Package Outline
08/14/2008

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