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| AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 6m 75A Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GJ) is available for low-profile applications. G D GD S TO-252(H) S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 +20 75 55 350 107 0.7 -55 to 175 -55 to 175 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 110 Units /W /W Data & specifications subject to change without notice 1 200810235 AP85T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 55 33 8 24 24.5 11 77 35 67 550 380 Max. Units 6 10 3 1 500 +100 52 V V/ m m V S uA uA nA nC nC nC 39 nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=45A VGS=4.5V, ID=30A VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=30V, VGS=0V Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Drain-Source Leakage Current (T j=175 C) VDS=24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 VGS=+20V ID=30A VDS=24V VGS=4.5V VDD=15V,VGS=0V VDS=15V ID=30A RG=3.3,VGS=10V RD=0.5 VGS=0V VDS=25V f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Output Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 2700 4200 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=30A, VGS=0V, dI/dt=100A/s Min. - Typ. 28 10 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP85T03GH/J 300 150 T C =25 C 250 o ID , Drain Current (A) 200 ID , Drain Current (A) 10V 7.0V 6.0V o T C = 175 C 10V 7.0V 6.0V 100 150 4.5V 100 4.5V V G =4.0V 50 V G =4.0V 50 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 13 2.0 I D =30A T c =25 11 I D =45A V G =10V Normalized RDS(ON) 1.5 RDS(ON) (m) 9 7 1.0 5 3 2 4 6 8 10 0.5 -50 0 50 100 150 200 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.4 30 2 20 VGS(th) (V) T j =175 o C T j =25 o C 1.6 IS (A) 1.2 10 0.8 0.4 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -50 25 100 175 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP85T03GH/J 14 10000 f=1.0MHz I D =30A 12 VGS , Gate to Source Voltage (V) 10 C (pF) 8 V DS =15V V DS =20V V DS =24V 1000 C iss 6 C oss 4 C rss 2 0 100 0 10 20 30 40 50 60 70 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) DUTY=0.5 100 0.2 ID (A) 100us 0.1 0.1 0.05 10 1ms 10ms 100ms DC 1 10 100 PDM t 0.02 T 0.01 T c =25 o C Single Pulse 1 0.1 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 F 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.50 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 E3 E1 F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Laser Marking Part Number Meet Rohs requirement for low voltage MOSFET only 85T03GH LOGO YWWSSS Package Code Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D A Millimeters SYMBOLS c1 D1 E2 A A1 B1 E1 E B2 MIN NOM MAX 2.20 0.90 0.40 0.60 0.40 0.40 6.40 4.80 6.70 5.40 1.30 ---7.00 2.30 1.20 0.60 0.85 0.50 0.50 6.60 5.20 7.00 5.60 1.50 2.30 8.30 2.40 1.50 0.80 1.05 0.60 0.60 6.80 5.50 7.30 5.80 1.70 ---9.60 c c1 D A1 B2 B1 F D1 E E1 E2 e F c 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e Part Marking Information & Packing : TO-251 Part Number 85T03GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 6 |
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