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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL1203E DESCRIPTION *High Voltage *High Speed Switching APPLICATIONS *Electronic ballasts for fluorescent lighting ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage VALUE 1200 1200 550 9 UNIT V Collector Current-Continuous Collector Current-Peak Base Current ww w scs .i 5 8 2 4 100 150 -65~150 V V V .cn mi e A A A A IBM PC Tj Tstg Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICES ICEO hFE-1 hFE-2 hFE-3 hFE-4 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0, L= 25mH IC= 1A; IB= 0.2A B BUL1203E MIN 550 TYP. MAX UNIT V 0.5 0.7 1.5 1.5 1.5 0.1 0.1 V V V V V mA mA IC= 2A; IB= 0.4A B IC= 3A; IB= 1A B IC= 2A; IB= 0.4A B IC= 3A; IB= 1A B VCE= 1200V; VBE= 0 w w scs .i w VCE= 550V; IB= 0 IC= 1mA; VCE= 5V IC= 10mA; VCE= 5V IC= 0.8A; VCE= 3V IC= 2A; VCE= 5V .cn mi e 10 10 14 9 32 28 Switching Times ;Resistive Load ton ts tf Turn-on Time Storage Time Fall Time IC= 2A; IB1= 0.4A; IB2= -0.8A; tp= 30s; VCC= 150V 0.5 3.0 0.3 s s s isc Websitewww.iscsemi.cn |
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