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| Shantou Huashan Electronic Devices Co.,Ltd. N PN S I L I C O N T R A N S I S T O R KSH13007 HIGH VOLTAGE SWITCH MODE APPLICATION ABSOLUTE MAXIMUM RATINGS a=25ae(c) T T stg Storage Temperature---------- 55~150ae T j Junction Temperature-----------150ae PCCollector Dissipation c=25ae T (c)-------80W VCBO Collector-Base Voltage----------700V VCEOCollector-Emitter Voltage---------400V VEBO Emitter-Base Voltage-----------9V ICCollector Current DC(c)-----------8A ICCollector Current Pulse(c)----------16A IBBase Current----------------4A TO-220 1D Base B 2D Collector C 3D Emitter, E cIEy=25ae Ta (c) Symbol Characteristics Collector-Emitter Sustaining Voltage Emitter-Base Cutoff Current Min 400 1 Typ Max Unit V mA Test Conditions BVCEO IEBO HFE 1(c) HFE 2(c) VCE(sat1) VCE(sat2) VCE(sat3) VBE(sat1) VBE(sat2) Cob fT tON tSTG tF IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A DC Current Gain Collector- Emitter Saturation Voltage 10 5 40 30 1 2 3 V V V V V pF 1.6 3 0.7 uS uS uS IC=2A, IB =400mA IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCB=10V, f=0.1MHz z VCE=10V, IC=500mA Vcc=125V,Ic=5A IB1=IB2=1A Base- Emitter Saturation Voltage Output Capacitance Current Gain-Bandwidth Product Turn On time Storage Time Fall Time 4 110 1.2 1.6 hFE Classification H1 10 16 H2 14 21 H3 19 26 H4 24 31 H5 29 40 |
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