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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO PARAMETER 2SC2591 Collector-base voltage 2SC2592 2SC2591 VCEO VEBO IC ICM PC Tj Tstg Collector-emitter voltage 2SC2592 Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base 180 5 1 1.5 20 150 -55~150 ae ae V A A W Open emitter 180 150 V CONDITIONS VALUE 150 V UNIT JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SC2591 IC=0.1mA ,IB=0 2SC2592 VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=10|I A ,IC=0 CONDITIONS 2SC2591 2SC2592 SYMBOL MIN 150 TYP. MAX UNIT VCEO Base-emitter breakdown voltage V 180 5 0.5 1.0 2.0 2.0 1 1 90 50 20 200 pF MHz 330 |I |I V V V A A IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCE=10V hFE-1 Classifications Q 90-155 R 130-220 S 185-330 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2591 2SC2592 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) JMnic |
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