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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT High frequency amplifier Transistor
VOLTAGE 6 Volts
APPLICATION
* Small Signal Amplifier .
2SC4774PT
CURRENT 50 mAmpere
FEATURE
* Surface mount package. (SC-70/SOT-323) * Low saturation voltage VCE(sat)=0.3V(max.) * Low cob. Cob=1.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability.
1.30.1
(2)
SC-70/SOT-323
(3) (1)
CONSTRUCTION
* NPN Silicon Transistor * Epitaxial planner type
0.30.1
0.65 2.00.2 0.65
1.250.1
MARKING
* UW
0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45
CIRCUIT
(1) B
C (3)
E (2)
Dimensions in millimeters
SC-70/SOT-323
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 12 6 3 50 250 +150 +150 +150 UNITS Volts Volts Volts mAmps mW
o
Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature
C C C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-11
RATING CHARACTERISTICS ( 2SC4774PT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current CONDITION IE=0; VCB=10V SYMBOL ICBO MIN. TYPE MAX. 0.5 UNITS uA
Emitter Cut-off Current
IC=0; VEB=7V
ICEO
-
-
0.5
uA
DC Current Gain Collector-Emitter Saturation Voltage
VCE/IC=5V/5mA IC=10mA; IB=1mA IB=3mA; VI=100mVrms f=500KHz IE=ie=0; VCB=10V; f=1MHz IC=-10mA; VCE=5V; f=200MHz
hFE VCEsat Ron Cob fT
270 300
2 1 800
560 0.3 1.7 Volts
Output-on resistance Output Collector Capacitance Transition Frequency
pF MHz
-
Note : 1. Pulse test: tp 300uSec; 0.02.
RATING CHARACTERISTIC CURVES ( 2SC4774PT )
Electrical characteristic curves
10
COLLECTOR CURRENT : IC (mA)
125C -25C
8
25mA
1.0 mA
30mA
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
40
0.2mA
40
6
20mA 15mA
30
0.1mA
30
4
10mA
20
20
2
5mA
10
IB=0mA 0.4 0.5
10
0 0
1
2
3
IB=0A 4 5
0 0
0.1
0.2
0.3
0 0
0.4
25C
Ta=25C
35mA
50
Ta=25C
mA A 0.5 0.4m
0.3mA
50
VCE=5V
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output
Fig.2 Grounded emitter output
Fig.3 Grounded emitter propagation
characteristics ( )
characteristics (
)
characteristics
RATING CHARACTERISTIC CURVES ( 2SC4774PT )
COLLECTER SATURATION VOLTAGE : VCE(sat) (mA)
DC CURRENT TRANSFER RATIO : hFE
500
Ta=25C VCE=5V
500
Ta=25C IC/IB=10
GAIN BANDWIDTH PRODUCT : fT (MHz)
1000
1000
2000 1000 500
Ta=25C VCE=5V
200 100 50
200 100 50 20 10
200 100 50
20 10 0.1 0.2
5 0.1 0.2 0.5 1 2 5 10 20 50
0.5
1
2
5
10 20
50
20 0.1 0.2
0.5
1
2
5
10 20
50
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current
Fig.5 Collector-emitter saturation
Fig.6 Gain bandwidth product vs.
voltage vs. collector current
collector current
20
20
OUTPUT CAPACITANCE : Cob (pF)
Ta=25C f=1MHz
50
FEEDBACK CAPACITIANCE : Cre (pF)
10 5
10 5
Ta=25C f=1MHz
ON RESISTANE : Ron ()
20 10 5
Ta=25C f=500kHz i=100mVrms RL=1k
2 1 0.5
2 1 0.5
2
0.2 0.1 0.2
0.5
1
2
5
10 20
50
0.2 0.1 0.2
0.5
1
2
5
10 20
50
1 0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
BASS CURRENT : IB (mA)
Fig.7 Collector output capacitance
Fig.8 Back capacitance voltage
Fig.9 Output-on resistance vs.
vs. voltage
base current

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