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| CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION VDS=-30V , ID=-5.3A RDS(ON) , VGS@-10V , IDS@ -5.3A = 60m RDS(ON) , VGS@-4.5V , IDS@ -4.2A = 90m FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot -Through FOM APPLICATIONS Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION 8-PIN SOP (S08) SYMBOL Top View P-Channel MOSFET ORDERING INFORMATION Part Number CMT9435G Package SOP-8 *Note: G : Suffix for Pb Free Product 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 1 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25 unless otherwise noted) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA=25 Maximum Power Dissipation TA=75 Operating Junction Temperature Range Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mount) Junction-to-Case Thermal Resistance TJ TSTG RqJA RqJC -55 to150 -55 to 150 50 30 /W /W PD Symbol VDS VGS ID IDM Value -30 20 -5.3 -20 2.5 W Unit V V A A Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 2 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units Static BVDSS RDS(ON) RDS(ON) VGS(th) gfs IDSS IGSS Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Gate-Body Leakage VGS=0V, ID=-250uA VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A VDS=VGS, ID=-250uA VDS=10V, ID=6A VDS=-24V, VGS=0V VGS=20V , VDS=0V -30 -1.0 4 50 75 -1.5 7 60 90 -3.0 -1 100 V m m V S uA nA Dynamic Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ID=-5.3A VDS=-15V VGS=-10V VDD=-15V ID=-1A RG=6,VGEN=-10V RL=15 VGS=0V VDS=-15V f=1.0MHz 9.52 3.43 1.71 10.8 2.33 23.53 3.87 551.57 90.96 60.79 - nC nC nC ns ns ns ns pF pF pF Source-Drain Diode Is VSD Max. Diode Forward Current Diode Forward Voltage IS=-5.3A, VGS=0V, -1.9 -1.3 A V Notes: 1.Pulse test : Pulse width <300us , duty cycle <2%. 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 3 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL CHARACTERISTICS 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 4 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 5 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET PACKAGE DIMENSION 8-PIN SOP (S08) 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 6 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 7 |
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