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FDD5N53 / FDU5N53 N-Channel MOSFET
January 2009
FDD5N53/FDU5N53
N-Channel MOSFET
530V, 4A, 1.5 Features
* RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A * Low gate charge ( Typ. 11nC) * Low Crss ( Typ. 5pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.
D
G S
D G
D-PAK FDD Series
G
DS
I-PAK FDU Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDD5N53/FDU5N53 530 30 4 2.4 16 256 4 4 4.5 40 0.3 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1.4 110 Units
o
C/W
(c)2009 Fairchild Semiconductor Corporation FDD5N53/FDU5N53 Rev. A
1
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FDD5N53 / FDU5N53 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDD5N53 FDD5N53 FDU5N53 Device FDD5N53TM FDD5N53TF FDU5N53TU Package D-PAK D-PAK I-PAK Reel Size 380mm 380mm Tape Width 16mm 16mm Quantity 2500 2000 70
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 530V, VGS = 0V VDS = 424V, TC = 125oC VGS = 30V, VDS = 0V 530 0.6 1 10 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 2A VDS = 40V, ID = 2A
(Note 4)
3.0 -
1.25 4.3
5.0 1.5 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 5A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
480 66 5 11 3 5
640 88 8 15 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25
(Note 4, 5)
-
13 22 28 20
36 54 66 50
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 4A VGS = 0V, ISD = 5A dIF/dt = 100A/s
(Note 4)
-
300 1.8
4 16 1.4 -
A A V ns C
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 32mH, IAS = 4A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDD5N53/FDU5N53 Rev. A
2
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FDD5N53 / FDU5N53 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
Figure 2. Transfer Characteristics
20
10
ID,Drain Current[A]
ID,Drain Current[A]
VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
10
150 C 25 C
o
o
1
1
-55 C
o
0.1
0.04 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
*Notes: 1. VDS = 20V 2. 250s Pulse Test
1 10 VDS,Drain-Source Voltage[V]
30
0.1 4 5 6 7 VGS,Gate-Source Voltage[V] 8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
3.0
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
70
RDS(ON) [], Drain-Source On-Resistance
2.5
IS, Reverse Drain Current [A]
150 C
o
2.0
VGS = 10V
10
25 C
o
1.5
VGS = 20V
1.0 0 3
*Note: TJ = 25 C
o
*Notes: 1. VGS = 0V
6 ID, Drain Current [A]
9
12
1 0.4
2. 250s Pulse Test
0.8 1.2 VSD, Body Diode Forward Voltage [V]
1.6
Figure 5. Capacitance Characteristics
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 100V VDS = 250V VDS = 400V
8
750 Capacitances [pF]
Ciss
*Note: 1. VGS = 0V 2. f = 1MHz
6
500
Coss
4
250
Crss
2
*Note: ID = 5A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V] 30
0
4 8 Qg, Total Gate Charge [nC]
12
FDD5N53/FDU5N53 Rev. A
3
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FDD5N53 / FDU5N53 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -75
*Notes: 1. VGS = 10V 2. ID = 2A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.8 -75
-25 25 75 125 o TJ, Junction Temperature [ C]
175
-25 25 75 125 o TJ, Junction Temperature [ C]
175
Figure 9. Maximum Safe Operating Area
30
30s
Figure 10. Maximum Drain Current vs. Case Temperature
4.5 4
10
ID, Drain Current [A]
1ms
100s
ID, Drain Current [A]
3
1
Operation in This Area is Limited by R DS(on)
10ms DC
2
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
1
0.01 1
10 100 VDS, Drain-Source Voltage [V]
800
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
3 Thermal Response [ZJC]
1
0.5
0.2 0.1
PDM t1 t2
0.1
0.05
*Notes:
0.02 0.01 Single pulse
1. ZJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.01 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
FDD5N53/FDU5N53 Rev. A
4
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FDD5N53 / FDU5N53 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD5N53/FDU5N53 Rev. A
5
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FDD5N53 / FDU5N53 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDD5N53/FDU5N53 Rev. A
6
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FDD5N53 / FDU5N53 N-Channel MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FDD5N53/FDU5N53 Rev. A
7
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FDD5N53 / FDU5N53 N-Channel MOSFET
Mechanical Dimensions
I-PAK
Dimensions in Millimeters
FDD5N53/FDU5N53 Rev. A
8
www.fairchildsemi.com
FDD5N53 / FDU5N53 N-Channel MOSFET
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Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM
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PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM
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Rev. I37
FDD5N53/FDU5N53 Rev. A
9
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