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| Shantou Huashan Electronic Devices Co.,Ltd. HBT151 Silicon Controlled Rectifier Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=12A) * Average On-State Current (I T(AV) =7.5A) * Non-isolated Type General Description Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. Absolute Maximum Ratings=25ae Ta unless otherwise specified (c) T s t g S torage Temperature ------------------------------------------------------ - 40~150ae Tj O perating Junction Temperature --------------------------------------------------- 125ae VDRM Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V IT RMS(c) .M.S On-State Current conduction angles(c) R all ----------------------------------------------12A IT(AV) Average On-State Current (Half Sine Wave : TC = 109 ----------------------------------------7.5A C) ITSM 2 Surge On-State Current (1/2 Cycle, 50Hz, Sine Wave, Non-repetitive) -------------------------- 100A 50A2 s I t Circuit Fusing Considerations(t = 10ms) ------------------------------------------------------------- PGM Forward Peak Gate Power Dissipation (Ta=25ae --------------------------------------------------- 5W ) PG(AV) Forward Average Gate Power Dissipation (over any 20 ms period) ----------------------------0.5W IFGM Forward Peak Gate Current -------------------------------------------------------------------------------- 2A VRGM Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V Shantou Huashan Electronic Devices Co.,Ltd. HBT151 (c) Conditions VAK =VDRM Electrical Characteristics=25ae Ta unless otherwise specified Symbol IDRM Items Repetitive Peak Off-State Current Peak On-State Voltage (1) Gate Trigger Current 2(c) Gate Trigger Voltage (2) Non-Trigger Gate Voltage Holding Current Thermal Resistance Thermal Resistance Critical Rate of Rise Off-state Voltage 50 60 0.2 Min. Typ. Max. 20 500 1.75 15 1.5 Unit uA V mA V Tc=25ae Tc=125ae ITM=23A,tp=380 s VAK =12V(DC), RL =10 ohm VAK =12V(DC), RL =10 ohm VTM IGT VG T VGD IH Rth(j-c) Rth(j-a) dv/dt Tc=25ae V VAK =12V, RL =100 ohm 20 1.3 Tc=125ae IT=100mA,Gate open, mA Tc=25ae ae /W ae /W V/ s Junction to Case Junction to Ambient Linear slope up to VD=VDRM67% Gate open Tj=125ae 1. Forward current applied for 1 ms maximum duration,duty cycle U 1%. 2. RGK current is not included in measurement Performance Curves Shantou Huashan Electronic Devices Co.,Ltd. HBT151 Performance Curves Shantou Huashan Electronic Devices Co.,Ltd. HBT151 Performance Curves |
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