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DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4532CC727
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
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Description Features
Part number MC-4532CC727EF-A75 MC-4532CC727PF-A75 MC-4532CC727XF-A75
The MC-4532CC727EF, MC-4532CC727PF and MC-4532CC727XF are 33,554,432 words by 72 bits synchronous This module provides high density and large quantities of memory in a small space without utilizing the surface-
dynamic RAM module on which 18 pieces of 128M SDRAM: PD45128841 are assembled.
mounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction.
* 33,554,432 words by 72 bits organization (ECC type) * Clock frequency and access time from CLK.
/CAS latency Clock frequency (MAX.) CL = 3 CL = 2 133 MHz 100 MHz Access time from CLK (MAX.) 5.4 ns 6.0 ns 5.4 ns
* Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge * Pulsed interface * Possible to assert random column address in every cycle * Programmable burst-length (1, 2, 4, 8 and full page) * Programmable /CAS latency (2, 3)
* Quad internal banks controlled by BA0 and BA1 (Bank Select) * Programmable wrap sequence (Sequential / Interleave) * Automatic precharge and controlled precharge * CBR (Auto) refresh and self refresh * Single 3.3 V 0.3 V power supply * LVTTL compatible * 4,096 refresh cycles/64 ms * All DQs have 10 10 % of series resistor
* Burst termination by Burst Stop command and Precharge command * 168-pin dual in-line memory module (Pin pitch = 1.27 mm) * Unbuffered type * Serial PD
Document No. E0052N20 (Ver. 2.0) Date Published March 2001 CP (K) Printed in Japan
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for availability and additional information.
This product became EOL in September, 2002.
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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CL = 3 133 MHz CL = 2 100 MHz 6.0 ns 5.4 ns CL = 3 133 MHz CL = 2 100 MHz 6.0 ns
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MC-4532CC727
Ordering Information
Part number Clock frequency (MAX.) MC-4532CC727EF-A75 133 MHz 168-pin Dual In-line Memory Module (Socket Type) MC-4532CC727PF-A75 Edge connector : Gold plated 34.93 mm height MC-4532CC727XF-A75 18 pieces of PD45128841G5 (Rev. E) (10.16 mm (400) TSOP (II)) 18 pieces of PD45128841G5 (Rev. P) (10.16 mm (400) TSOP (II)) 18 pieces of PD45128841G5 (Rev. X) (10.16 mm (400) TSOP (II)) Package Mounted devices
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Data Sheet E0052N20
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MC-4532CC727
Pin Configuration
168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated)
/xxx indicates active low signal.
85 86 87 88 89 90 91 92 93 94 VSS DQ32 DQ33 DQ34 DQ35 Vcc DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 Vcc DQ46 DQ47 CB4 CB5 VSS NC NC Vcc /CAS DQMB4 DQMB5 /CS1 /RAS VSS A1 A3 A5 A7 A9 BA0 (A13) A11 Vcc CLK1 NC VSS CKE0 /CS3 DQMB6 DQMB7 NC Vcc NC NC CB6 CB7 VSS DQ48 DQ49 DQ50 DQ51 Vcc DQ52 NC NC NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 Vcc DQ60 DQ61 DQ62 DQ63 VSS CLK3 NC SA0 SA1 SA2 Vcc VSS DQ0 DQ1 DQ2 DQ3 Vcc DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 Vcc DQ14 DQ15 CB0 CB1 VSS NC NC Vcc /WE DQMB0 DQMB1 /CS0 NC VSS A0 A2 A4 A6 A8 A10 BA1 (A12) Vcc Vcc CLK0 VSS NC /CS2 DQMB2 DQMB3 NC Vcc NC NC CB2 CB3 VSS DQ16 DQ17 DQ18 DQ19 Vcc DQ20 NC NC CKE1 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 Vcc DQ28 DQ29 DQ30 DQ31 VSS CLK2 NC WP SDA SCL Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84
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95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168
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A0 - A11 [Row: A0 - A11, Column: A0 - A9] BA0 (A13), BA1 (A12) DQ0 - DQ63, CB0 - CB7 CLK0 - CLK3 CKE0, CKE1 /CS0 - /CS3 /RAS /WE /CAS : Clock Input : Write Enable SA0 - SA2 SDA SCL VCC VSS WP NC : Power Supply : Ground : Write Protect
Data Sheet E0052N20
: Address Inputs
: SDRAM Bank Select : Data Inputs/Outputs : Clock Enable Input
: Chip Select Input
: Row Address Strobe : Column Address Strobe
DQMB0 - DQMB7 : DQ Mask Enable : Address Input for EEPROM : Serial Data I/O for PD : Clock Input for PD
: No Connection
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MC-4532CC727
Block Diagram
/WE /CS0 DQMB0 /CS1 /CS2 DQMB2 /CS3
DQ 0 DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7
DQMB1
DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D0 DQ 3 DQ 2 DQ 1 DQ 0
/WE
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D9 DQ 4 DQ 5 DQ 6 DQ 7
/WE
DQ 16 DQ 17 DQ 18 DQ 19 DQ 20 DQ 21 DQ 22 DQ 23
DQMB3
DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D3 DQ 3 DQ 2 DQ 1 DQ 0
/WE
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D12 DQ 4 DQ 5 DQ 6 DQ 7
/WE
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DQ 8 DQ 9 DQ 10 DQ 11 DQ 12 DQ 13 DQ 14 DQ 15 DQ 6 DQ 5 DQ 4 DQ 3 DQ 2 DQ 1 DQ 0 CB 0 CB 1 CB 2 CB 3 CB 4 CB 5 CB 6 CB 7
DQMB4
DQ 7 DQM
/CS
/WE
DQ 0 DQM DQ 1 DQ 2 DQ 3 DQ 4 DQ 5 DQ 6 DQ 7
DQMB5
/CS
/WE
D1
D10
DQ 24 DQ 25 DQ 26 DQ 27 DQ 28 DQ 29 DQ 30 DQ 31
DQMB6
DQ 4 DQM /CS DQ 7 DQ 6 DQ 5 D4 DQ 3 DQ 2 DQ 1 DQ 0
/WE
DQ 3 DQM /CS DQ 0 DQ 1 DQ 2 D13 DQ 4 DQ 5 DQ 6 DQ 7
/WE
DQ 4 DQM /CS DQ 7 DQ 0 DQ 2 D2 DQ 6 DQ 5 DQ 3 DQ 1
/WE
DQ 3 DQM /CS DQ 0 DQ 7 DQ 5 D11 DQ 1 DQ 2 DQ 4 DQ 6
/WE
DQ 48 DQ 49 DQ 50 DQ 51 DQ 52 DQ 53 DQ 54 DQ 55
DQMB7
DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D7 DQ 3 DQ 2 DQ 1 DQ 0
/WE
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D16 DQ 4 DQ 5 DQ 6 DQ 7
/WE
DQ 32 DQ 33 DQ 34 DQ 35 DQ 36 DQ 37 DQ 38 DQ 39
DQMB5
DQ 40 DQ 41 DQ 42 DQ 43 DQ 44 DQ 45 DQ 46 DQ 47
Remarks 1. The value of all resistors is 10 except CKE1 and WP. 2. D0 - D17: PD45128841 (4M words x 8 bits x 4 banks)
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DQ 4 DQM DQ 7 DQ 6 DQ 5 DQ 3 DQ 2 DQ 1 DQ 0
/CS /WE D5
DQ 3 DQM DQ 0 DQ 1 DQ 2 DQ 4 DQ 5 DQ 6 DQ 7
/CS
/WE
D14
DQ 56 DQ 57 DQ 58 DQ 59 DQ 60 DQ 61 DQ 62 DQ 63
DQ 7 DQM /CS DQ 6 DQ 5 DQ 4 D8 DQ 3 DQ 2 DQ 1 DQ 0
/WE
DQ 0 DQM /CS DQ 1 DQ 2 DQ 3 D17 DQ 4 DQ 5 DQ 6 DQ 7
/WE
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/WE
DQ 5 DQM /CS DQ 7 DQ 6 DQ 4 D6 DQ 3 DQ 2 DQ 1 DQ 0
DQ 2 DQM /CS DQ 0 DQ 1 DQ 3 D15 DQ 4 DQ 5 DQ 6 DQ 7
/WE
SERIAL PD SCL A0 A1
CLK0
CLK: D0, D1, D2, D5, D6
CLK2
CLK: D3, D4, D7, D8
SDA
3.3 pF
A2
WP
47 k
SA0 SA1 SA2
CLK1
CLK: D9, D10, D11, D14, D15
CLK3
CLK: D12, D13, D16, D17
3.3 pF
A0 - A11 BA0 BA1 VCC VSS
A0 - A11: D0 - D17 A13: D0 - D17 A12: D0 - D17
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10 k
CKE: D9-D17
/RAS /CAS C D0 - D17 CKE0 D0 - D17
/RAS: D0 - D17 /CAS: D0 - D17 CKE: D0 - D8
CKE1
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Data Sheet E0052N20
MC-4532CC727
Electrical Specifications
* All voltages are referenced to VSS (GND). * After power up, wait more than 100 s and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings
Parameter Voltage on power supply pin relative to GND Voltage on input pin relative to GND Short circuit output current Power dissipation Symbol VCC VT IO PD TA Tstg Condition Rating -0.5 to +4.6 -0.5 to +4.6 50 18 0 to 70 -55 to +125 Unit V V mA W C C
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Storage temperature
Operating ambient temperature
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Supply voltage High level input voltage Low level input voltage Operating ambient temperature Symbol VCC VIH VIL TA Condition MIN. 3.0 TYP. 3.3 MAX. 3.6 Unit V V V C
Capacitance (TA = 25 C, f = 1 MHz)
Parameter Input capacitance
Data input/output capacitance
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2.0 -0.3 0 +0.8 70 Symbol CI1 CI2 CI3 CI4 CI5 Test condition MIN. 60 TYP. MAX. 102 40 A0 - A11, BA0 (A13), BA1 (A12), /RAS, /CAS, /WE CLK0 - CLK3 CKE0, CKE1 /CS0 - /CS3 20 30 56 15 5 33 DQMB0 - DQMB7 21 CI/O DQ0 - DQ63, CB0 - CB7 7 19
Data Sheet E0052N20
VCC + 0.3
Unit pF
pF
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MC-4532CC727
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter Operating current Symbol ICC1 Burst length = 1 tRC tRC(MIN.), IO = 0 mA Precharge standby current in power down mode Precharge standby current in non power down mode ICC2P CKE VIL(MAX.), tCK = 15 ns Test condition
/CAS latency = 2 /CAS latency = 3
MIN. MAX. 1,170 1,215 18 18 360 144 90 72 540
Unit Notes mA 1
mA
ICC2PS CKE VIL(MAX.), tCK = ICC2N CKE VIH(MIN.), tCK = 15 ns, /CS VIH(MIN.), Input signals are changed one time during 30 ns.
mA
ICC2NS CKE VIH(MIN.), tCK = Input signals are stable. ICC3P CKE VIL(MAX.), tCK = 15 ns
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Active standby current in power down mode Active standby current in non power down mode Operating current (Burst mode) CBR (Auto) refresh current Self refresh current Input leakage current Output leakage current High level output voltage Low level output voltage
mA
ICC3PS CKE VIL(MAX.), tCK = ICC3N CKE VIH(MIN.), tCK = 15 ns, /CS VIH(MIN.), Input signals are changed one time during 30 ns. ICC3NS CKE VIH(MIN.), tCK = , Input signals are stable. ICC4 tCK tCK(MIN.) IO = 0 mA tRC tRC(MIN.)
/CAS latency = 2 /CAS latency = 3 /CAS latency = 2 /CAS latency = 3
mA
360 1,350 1,665 2,340 2,430 36 - 18 + 18 mA mA 3 mA 2
Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.). 2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.). 3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).
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ICC5 ICC6 II(L) IO(L) VOH VOL
CKE 0.2 V VI = 0 to 3.6 V, All other pins not under test = 0 V
A A A
V
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CKE1 -500 +500 -3 +3 DOUT is disabled, VO = 0 to 3.6 V IO = - 4.0 mA 2.4 IO = + 4.0 mA 0.4
Data Sheet E0052N20
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MC-4532CC727
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Test Conditions
Parameter AC high level input voltage / low level input voltage Input timing measurement reference level Transition time (Input rise and fall time) Output timing measurement reference level Value 2.4 / 0.4 1.4 1 1.4 Unit V V ns V
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tCK tCH CLK 2.4 V 1.4 V 0.4 V tSETUP tHOLD 2.4 V 1.4 V 0.4 V tAC tOH tCL
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Input Output
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Data Sheet E0052N20
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MC-4532CC727
Synchronous Characteristics
Parameter Symbol MIN. Clock cycle time /CAS latency = 3 /CAS latency = 2 Access time from CLK /CAS latency = 3 /CAS latency = 2 CLK high level width CLK low level width Data-out hold time tCK3 tCK2 tAC3 tAC2 tCH tCL tOH tLZ /CAS latency = 3 /CAS latency = 2 tHZ3 tHZ2 tDS tDH tAS tAH tCKS tCKH tCKSP tCMS 2.5 2.5 3.0 0 3.0 3.0 1.5 0.8 1.5 0.8 1.5 0.8 1.5 1.5 5.4 6.0 7.5 10 -A75 MAX. (133 MHz) (100 MHz) 5.4 6.0 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 1 1 1 Unit Note
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Data-in setup time Data-in hold time Address setup time Address hold time CKE setup time CKE hold time
Data-out low-impedance time Data-out high-impedance time
CKE setup time (Power down exit) Command (/CS0 - /CS3, /RAS, /CAS, /WE, DQMB0 - DQMB7) setup time
Command (/CS0 - /CS3, /RAS, /CAS, /WE, DQMB0 - DQMB7) hold time
Note 1. Output load
Remark These specifications are applied to the monolithic device.
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Output
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tCMH 0.8 ns
Z = 50 50 pF
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Data Sheet E0052N20
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MC-4532CC727
Asynchronous Characteristics
Parameter Symbol MIN. ACT to REF/ACT command period (operation) REF to REF/ACT command period (refresh) ACT to PRE command period PRE to ACT command period Delay time ACT to READ/WRITE command ACT(one) to ACT(another) command period Data-in to PRE command period Data-in to ACT(REF) command period (Auto precharge) /CAS latency = 3 /CAS latency = 2 tRC tRC1 tRAS tRP tRCD tRRD tDPL tDAL3 tDAL2 tRSC tT tREF 67.5 67.5 45 20 20 15 8 1CLK+22.5 1CLK+20 2 0.5 30 64 120,000 -A75 MAX. ns ns ns ns ns ns ns ns ns CLK ns ms 1 1 Unit Note
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Transition time
Mode register set cycle time
Refresh time (4,096 refresh cycles)
Note This device can satisfy the tDAL3 spec of 1CLK+20 ns for up to and including 125 MHz operation.
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Data Sheet E0052N20
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MC-4532CC727
Serial PD
Byte No. 0 1 2 3 4 5 6 7 8 9 Function Described Defines the number of bytes written into serial PD memory Total number of bytes of serial PD memory Fundamental memory type Number of rows Number of columns Number of banks Data width Hex 80H 08H 04H 0CH 0AH 02H 48H 00H 01H 75H 54H 02H 80H 08H 08H 01H 8FH 04H 06H 01H Bit 7 1 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 Bit 6 0 0 0 0 0 0 1 0 0 1 1 0 0 0 0 0 0 0 0 0 Bit 5 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 Bit 4 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 Bit 3 0 1 0 1 1 0 1 0 0 0 0 0 0 1 1 0 1 0 0 0 Bit 2 0 0 1 1 0 0 0 0 0 1 1 0 0 0 0 0 1 1 1 0 Bit 1 0 0 0 0 1 1 0 0 0 0 0 1 0 0 0 0 1 0 1 0 Bit 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 1 1 0 0 1
(1/2)
Notes 128 bytes 256 bytes SDRAM 12 rows 10 columns 2 banks 72 bits 0 LVTTL 7.5 ns 5.4 ns ECC Normal x8 x8 1 clock 1, 2, 4, 8, F 4 banks 2, 3 0 0
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10 11 12 13 SDRAM width 14 15 16 17 18 19 20 21 22 23 24 25-26 27 28 29 30 31 tRP(MIN.) tRRD(MIN.) tRCD(MIN.) tRAS(MIN.)
Data width (continued) Voltage interface
CL = 3 Cycle time
CL =3 Access time
DIMM configuration type Refresh rate/type
Error checking SDRAM width Minimum clock delay
Burst length supported
Number of banks on each SDRAM /CAS latency supported /CS latency supported /WE latency supported
SDRAM module attributes
SDRAM device attributes : General CL = 2 Cycle time CL =2 Access time
Module bank density
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01H 0 0 0 0 0 0 0 1 00H 0 0 0 0 0 0 0 0 0EH 0 0 0 0 1 1 1 0 A0H 60H 1 0 1 0 0 0 0 0 0 1 1 0 0 0 0 0 00H 0 0 0 0 0 0 0 0 14H 0 0 0 1 0 1 0 0 0FH 14H 0 0 0 0 1 1 1 1 0 0 0 1 0 1 0 0 2DH 20H 0 0 1 0 1 1 0 1 0 0 1 0 0 0 0 0
Data Sheet E0052N20
10 ns 6 ns
20 ns 15 ns 20 ns 45 ns 128M bytes
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MC-4532CC727
(2/2)
Byte No. 32 Function Described Command and address signal input setup time 33 Command and address signal input hold time 34 35 36-61 62 Data signal input setup time Data signal input hold time 15H 08H 00H 12H C2H 0 0 0 0 1 0 0 0 0 1 0 0 0 0 0 1 0 0 1 0 0 1 0 0 0 1 0 0 0 0 0 0 0 1 1 1 0 0 0 0 1.2 1.5 ns 0.8 ns 08H 0 0 0 0 1 0 0 0 0.8 ns Hex 15H Bit 7 0 Bit 6 0 Bit 5 0 Bit 4 1 Bit 3 0 Bit 2 1 Bit 1 0 Bit 0 1 Notes 1.5 ns
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SPD revision 63 64-71 72 73-90 91-92 Revision code 93-94 95-98 99-125 Mfg specific 126 127
Checksum for bytes 0 - 62 Manufacture's JEDEC ID code
Manufacturing location Manufacture's P/N
Manufacturing date
Assembly serial number
Intel specification frequency
Intel specification /CAS latency support
Timing Chart
Refer to the PD45128441, 45128841, 45128163 Data sheet (E0031N).
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64H FFH
0 1
1 1
1 1
0 1
0 1
1 1
0 1
0 1
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Data Sheet E0052N20
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MC-4532CC727
Package Drawing
168 PIN DUAL IN-LINE MODULE (SOCKET TYPE)
A (AREA B) R2 F1 Y1 Y2 Z1 Z2 N F2
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R1 J I M2 (AREA A) M1 (AREA B)
Q L A H K C G D A1 (AREA A)
ITEM A A1 B C D D1 D2 E F1 F2 G H I J K L M M1 M2 N P Q R1 R2 S T U1 U2 V W X Y1 Y2 Z1 Z2
M
B
S
(OPTIONAL HOLES)
U1
U2 T
B
E
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detail of A part W V X
detail of B part D2
P
D1
MILLIMETERS 133.35 133.350.13 11.43 36.83 6.35 2.0 3.125 54.61 2.44 3.18 6.35 1.27 (T.P.) 8.89 24.495 42.18 17.78 34.930.13 15.15 19.78 4.0 MAX. 1.0 R2.0 4.00.10 9.53 3.0 1.270.1 4.0 MIN. 4.0 MIN. 0.20.15 1.00.05 2.540.10 3.0 MIN. 2.26 3.0 MIN. 2.26
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Data Sheet E0052N20
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M168S-50A77
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MC-4532CC727
[ MEMO ]
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Data Sheet E0052N20
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MC-4532CC727
[ MEMO ]
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Data Sheet E0052N20
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MC-4532CC727
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3
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2 Note:
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
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Data Sheet E0052N20
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MC-4532CC727
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory IC, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. When re-packing memory modules, be sure the modules are NOT touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules.
* The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of Elpida's data sheets or data books, etc., for the most up-to-date specifications of Elpida semiconductor products. Not all products and/or types are available in every country. Please check with an Elpida Memory, Inc. for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of Elpida. Elpida assumes no responsibility for any errors that may appear in this document. * Elpida does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of Elpida semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. Elpida assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While Elpida endeavours to enhance the quality, reliability and safety of Elpida semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in Elpida semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * Elpida semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of Elpida semiconductor products is "Standard" unless otherwise expressly specified in Elpida's data sheets or data books, etc. If customers wish to use Elpida semiconductor products in applications not intended by Elpida, they must contact an Elpida Memory, Inc. in advance to determine Elpida's willingness to support a given application. (Note) (1) "Elpida" as used in this statement means Elpida Memory, Inc. and also includes its majority-owned subsidiaries. (2) "Elpida semiconductor products" means any semiconductor product developed or manufactured by or for Elpida (as defined above).
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