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| MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC SOT-23 COLLECTOR 3 MECHANICA DATA *Case: Molded plastic *Epoxy: UL 94V-O rate flame retardant *Lead: MIL-STD-202E method 208C guaranteed *Mounting position: Any *Weight: 0.008 gram 1 BASE 2 EMITTER 0.006(0.15) 0.003(0.08) 0.055(1.40) 0.047(1.20) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.012(0.30) 0.100(2.55) 0.089(2.25) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.019(2.00) 0.071(1.80) 1 3 0.110(2.80) 2 0.118(3.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS (@ TA = 25OC unless otherwise noted) RATINGS Max. Steady State Power Dissipation (1) @TA=25oC Max. Operating Temperature Range Storage Temperature Range SYMBOL PD TJ TSTG VALUE 225 150 -55 to +150 UNITS mW o o C C ELECTRICAL CHARACTERISTICS (@ TA = 25OC unless otherwise noted) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes : 1. Alumina=0.4*0.3*0.024 in. 99.5% alumina. 2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)". SYMBOL RQJA MIN. TYP. MAX. 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) (I C = 1.0mAdc, I B =0) Collector-Base Breakdown Voltage (I C = 100 uAdc, IE = 0) Emitter-Base Breakdown Voltage (I E = 10 uAdc, IC = 0) Collector Cutoff Current (V CB = 100Vdc, I E = 0) (V CB = 100Vdc, I E = 0, T A = 100 C) Emitter Cutoff Current (V EB = 4.0Vdc, I C = 0) O Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO I EBO 140 160 6.0 - 100 100 50 Vdc Vdc Vdc nAdc uAdc nAdc ON CHARACTERISTICS DC Current Gain (I C = 1.0mAdc, V CE = 5.0Vdc) (I C = 10mAdc, V CE = 5.0Vdc) (I C = 50mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) hFE 60 60 20 250 0.15 0.25 1.0 1.2 - VCE(sat) Vdc Base-Emitter Saturation Voltage (I C = 10mAdc, I B = 1.0mAdc) (I C = 50mAdc, I B = 5.0mAdc) VBE(sat) Vdc Note: Pluse Test : Pluse Width = 300mS, Duty Cycle = 2.0% RATING AND CHARACTERISTICS CURVES ( MMBT5550 ) 500 300 200 100 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 TJ = 125 C 25 C -55 C O O o hFE, DC CURRENT GAIN VCE = 1.0 V VCE = 5.0 V 2.0 5.0 .0 7 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE, COLLECTOR--ENITTER VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 101 IC, COLLECTOR CURRENT ( uA) 1.0 100 10-1 10-2 10-3 10-4 10-5 VCE = 30 V 0.8 V, VOLTAGE (V) TJ=125 C O TJ=25 C O IC = ICES O 0.6 0.4 0.2 VBE(sat) @ IC/IB=10 75 C REVERSE 25 C O FORWARD VCE(sat) @ IC/IB=10 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 VBE, BASE--ETMITTER VOLTAGE (VOLTS) IC, COLLECT OR CURRENT (mA) FIgure 3. Collector Cut-Off Region Figure 4. "On" Voltages RATING AND CHARACTERISTICS CURVES ( MMBT5550 ) O QV,TEMPERATURE COEFFICIENT (mV/ C) 2.5 2.0 1.5 1.0 0.5 0 0.5 VB for V BE(sat) VC for VCE(sat) TJ=-55 C to +135 C O O 100 70 50 C,CAPACITANCE (pF) TJ=25OC 30 20 10 7.0 5.0 3.0 2.0 Cibo Cobo -1.0 -1.5 -2.5 0.1 0.2 0.3 0.5 -2.0 1.0 2.0 3.0 5.0 10 20 30 50 100 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 IC,COLLECTOR CURRENT (mA) VR, REVERSE VOLAGE (VOLTS) 7.0 10 20 Figure 5. Temperature Coefficients 1000 500 300 200 100 50 30 20 10 0.2 0.3 0.5 Figure 6. Capacitances 5000 3000 2000 t, TIME (nS) 1000 500 300 200 100 td@VEF(off) =1.0V VCC=120V tr @VCC=30V tr@VCC=120V IC/IB=10 O TJ=25 C IC/IB=10 O TJ=25 C tr@VCC=120V tr@VCC=30V t, TIME (nS) td @ VEB(off)=1.0V VCC=120V 1 .0 2.0 3.0 5 .0 10 20 30 50 100 200 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 2030 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. Turn-On Time IC, COLLECTOR CURRENT (mA) Figure 8. Turn-Off Time DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures. |
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