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| QS043-402-2/5 95.0 4-O 5.5 80.0 CL 1 3 2 14 13 4-M5 20.0 2 25 26 31 32 26 25 32 31 13.5 3 5 20.0 66 20.0 5.75 18.25 20.0 66 8-fasten tab #110 8.0 26.0 LABEL 7.0 23.0 62.0 5 CL 1 16.5 3.5 48.0 20 19 13 14 19 20 Dimension:mm ollector-mitter oltage ate-mitter oltage ollector urrent ollector ower issipation unction emperature ange torage emperature ange (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal (kgfcm) , . ise urn-on all urn-off ime ime ime ime = 600V,= 0V = 20V,= 0V = 150A,= 15V = 5V,= 150mA = 10V,= 0V,= 1MH = = = = 300V 2.0 5.1 15V . . . . 5,000 . . . . . . . . . . . . . ollector-mitter ut-ff urrent ate-mitter eakage urrent ollector-mitter aturation oltage ate-mitter hreshold oltage nput apacitance witching ime orward urrent eak orward oltage everse ecovery ime = 150A,= 0V = 150A,= -10V i/t= 300A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . . . 00 QS043-402-3/5 Fig.1- Output Characteristics (Typical) 300 Fig.2- Output Characteristics (Typical) TC=25C 300 TC=125C VGE=20V 12V VGE=20V 250 12V 250 15V 11V 15V 11V Collector Current I C (A) 200 Collector Current I C (A) 200 150 10V 150 10V 100 9V 100 9V 50 50 8V 8V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25C 16 14 12 10 8 6 4 2 0 TC=125C IC=60A 150A 300A IC=60A 150A 300A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 0 4 8 12 16 20 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 14 30000 100000 RL=2.0 TC=25C Collector to Emitter Voltage V CE (V) VGE=0V f=1MHZ TC=25C Gate to Emitter Voltage VGE (V) 300 250 200 150 100 50 0 12 10 Capacitance C (pF) 10000 Cies VCE=300V 200V 100V 8 6 4 2 0 600 3000 Coes Cres 1000 300 0 100 200 300 400 500 100 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Total Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 00 QS043-402-4/5 Fig.7- Collector Current vs. Switching Time (Typical) 1 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 5 0.8 tOFF VCC=300V RG=5.1 VGE=15V TC=25C Resistive Load Switching Time t (s) Switching Time t (s) 2 1 0.5 VCC=300V IC=150A VGE=15V TC=25C Resistive Load 0.6 tf 0.4 toff ton tr(V CE) tf 0.2 0.1 0.05 0.2 tON tr(VCE) 0 0 50 100 150 200 250 0.02 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.9- Collector Current vs. Switching Time 10 Fig.10- Series Gate Impedance vs. Switching Time 10 5 1 Switching Time t (s) Switching Time t (s) tOFF tON VCC=300V RG=5.1 VGE=15V TC=125C Inductive Load 2 1 0.5 VCC=300V IC=150A VGE=15V TC=125C Inductive Load 0.1 tf tr(Ic) toff ton tf 0.2 0.1 0.05 0.01 tr(IC ) 0.001 0 50 100 150 200 250 0.02 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) Fig.11- Collector Current vs. Switching Loss 16 300 Fig.12- Series Gate Impedance vs. Switching Loss VCC=300V IC=150A VGE=15V TC=125C Inductive Load Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 12 VCC=300V RG=5.1 VGE=15V TC=125C Inductive Load 100 EON EOFF 8 30 EON ERR EOFF 10 4 3 ERR 0 0 50 100 150 200 250 1 3 10 30 100 Collector Current IC (A) Series Gate Impedance RG ( ) 00 QS043-402-5/5 300 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) TC=25C TC=125C Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 250 500 IF=150A TC=25C TC=125C trr Forward Current I F (A) 200 200 150 100 100 50 50 20 IRrM 0 0 1 2 3 4 10 0 150 300 450 600 750 900 Forward Voltage VF (V) -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 1000 500 200 RG=5.1 , VGE=15V, TC<125C Collector Current I C (A) 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3 Transient Thermal Impedance Rth (J-C) (C/W) 1 FRD 3x10 -1 IGBT 1x10 -1 3x10 -2 1x10 -2 3x10 -3 1x10 -3 10 -5 TC=25C 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 1 10 1 Time t (s) 00 |
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