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VRF2933
50V, 300W, 150MHz
RF POWER VERTICAL MOSFET
The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
FEATURES
* Improved Ruggedness V(BR)DSS = 170V * 300W with 22dB Typ. Gain @ 30MHz, 50V * Excellent Stability & Low IMD * Common Source Configuration * RoHS Compliant * 3:1 Load VSWR Capability at Specified Operating Conditions * Nitride Passivated * Refractory Gold Metallization * Improved Replacement for SD2933 * Thermally Enhanced Package
Maximum Ratings
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device dissipation @ TC = 25C Storage Temperature Range Operating Junction Temperature Max
All Ratings: TC =25C unless otherwise specified
VRF2933 170 40 40 648 -65 to 150 200 Unit V A V W C
Static Electrical Characteristics
Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current (VDS = 20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 8 2.9 3.6 4.4 Min 170 Typ 180 1.8 2.8 2.0 2.0 Max Unit V mA A mhos V
Thermal Characteristics
Symbol RJC Characteristic Junction to Case Thermal Resistance Min Typ Max 0.27 Unit C/W
050-4941 Rev F 8 -2009
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol CISS Coss Crss Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1MHz Min Typ 740 400 32 Max
VRF2933
Unit
pF
Functional Characteristics
Symbol GPS D Parameter f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W f1 = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 300W f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W
3:1 VSWR - All Phase Angles
Min 20
Typ 25 50
Max
Unit dB %
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
55 50 45 40 ID, DRAIN CURRENT (A) 35 30 25 20 15 10 5 0 V 0 5 10 15 4.5V 4V 3.5V 20 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 6V 5.5V 5V ID, DRAIN CURRENT (A) 7.5V 6.5V 25 20 15 10 5 TJ= 125C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 30
250s PULSE TEST<0.5 % DUTY CYCLE
TJ= -55C TJ= 25C
1.0E-8
100
1.0E-9 C, CAPACITANCE (F)
Ciss Coss
ID, DRAIN CURRENT (V)
IDMax
10
Rds(on) PD Max
1.0E-10 Crss
050-4941 Rev F 8 -2009
1.0E-11
0
10
20
30
40
50
60
1
TJ = 125C TC = 75C
1
10
100
BVdss Line
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage
VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area
VRF2933
0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.20 0.15 0.10 0.05 0 D = 0.9
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10
-5
t1 t2
t1 = Pulse Duration
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3
10-2
10 -1
1.0
RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
TJ (C)
.079
Dissipated Power (Watts)
TC (C)
.076 .080 .115 .224
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
.009
FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL
500 450 OUTPUT POWER (WPEP) 400 350 300 250 200 150 100 50 0 0
500
Freq=30MHz
50V
Freq=65MHz
ZEXT
450 OUTPUT POWER (WPEP) 400 350 300 250 200 150 100 50
50V
40V
40V
0.5 1 1.5 2 2.5 Pout, INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN
3
0
0
2 4 6 8 10 Pout, INPUT POWER (WATTS PEP) Figure 7. POUT versus PIN
12
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2 13.5 27.1 40.7 65 100 150
Zin 23.6 - j 5.5 7.6 - j 10.1 3.5 - j 6.0 2.5 - j 4.0 1.95 - j 2.07 1.8 - j 0.66 1.78 + j 0.5
Zout 4.0 - j 0.1 3.9 - j 0.6 3.7 - j 1.1 3.3 - j 1.5 2.6 - j 1.9 1.76 - j 0.2
050-4941 Rev F 8-2009
1.03 + j 1.7
ZIN - Gate shunted with 25 Idq = 250mA ZOL - Conjugate of optimum load for 300 Watts output at Vdd=150V
VRF2933
30 MHz Test Circuit
R1 Vbias R2
50V +
C3 C4 R3 L1 C2 R4 FB L2 C5 C9 C10
L3
+
C11 C12
T2
Output C8
T1
RF Input
VRF2933
C6 C7
C1
C1 1800pF ATC100B ceramic C2, C3, C5, C9, C10, C12 0.1uF 100V C6 680 pF metal clad 500V mica C7 ARCO 467 mica trimmer C8 100 pF ATC 100E ceramic C4, C11 10uF 100V Electrolytic FB small ferrite bead ui =125 L1 20 nH 2t #18 0.188"d .2"l L2 38 nH - 2.5t #14 enam. .25" dia.
L3 2t #16 on 2x 267300081 .5" bead R1-R2 1k Ohm 1/4W R3 100 Ohm 1W R4 470 Ohm "low inductance" 3W T1 16:1 transforner 4t #20 teflon on RF Parts Co. T1/2 transformer core T2 9:1 transformer 3t #16 teflon on RF Parts Co. T1 transformer core
M177 (0.63 dia. SOE) Mechanical Data All dimensions are .005
A .125d nom B 4 1
J
DIM MIN 0.225 0.265 0.860 1.130 0.545 0.003 0.098 0.150 TYP 0.230 0.270 0.865 1.135 0.550 0.005 0.103 0.160 MAX 0.235 0.275 0.870 1.140 0.555 0.007 0.108 0.170 0.280 1.080 0.625 1.100 0.630 1.120 0.635
.135 r
A B
5 3
C D E
PIN 1 - DRAIN PIN 2 - GATE PIN 3 - SOURCE PIN 4 - SOURCE PIN 5 - SOURCE
2
OK C D E
F G H I J K
F
050-4941 Rev F 8-2009
H G
I
Seating Plane
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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