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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
DESCRIPTION *With TO-126 package *Complement to type 2SA743/743A APPLICATIONS *For low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25? )
SYMBOL PARAMETER 2SC1212 VCBO Collector-base voltage 2SC1212A 2SC1212 VCEO Collector- emitter voltage 2SC1212A VEBO IC Emitter-base voltage Collector current Ta=25? PD Total power dissipation TC=25? Tj Tstg Junction temperature Storage temperature 8 150 -55~ +150 ? ? Open collector Open base 80 4 1 0.75 W V A Open emitter 80 50 V CONDITIONS VALUE 50 V UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER 2SC1212 V(BR)CEO Collector-emitter breakdown voltage 2SC1212A 2SC1212 V(BR)CBO Collector-base breakdown voltage 2SC1212A V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency IE=1mA ;IC=0 IC=1A ;IB=0.1A IC=50mA ; VCE=4V VCB=50V; IE=0 IC=50mA ; VCE=4V IC=1A ; VCE=4V IC=30mA ; VCE=4V IC=1mA ;IE=0 IC=10mA ;RBE=8 CONDITIONS
2SC1212 2SC1212A
MIN 50
TYP.
MAX
UNIT
V 80 50 V 80 4 1.5 1.0 5 60 20 160 MHz 200 V V V A
u
hFE-1 Classifications B 60-120 C 100-200
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1212 2SC1212A
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1212 2SC1212A
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