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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3884 DESCRIPTION *High Breakdown Voltage: VCBO= 1400V (Min) *High Switching Speed APPLICATIONS *Horizontal deflection output for high resolution display. *High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1400 V 600 V 5 V 6 A 12 A 3 A 50 W .cn mi e ICM Collector Current- Peak IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3884 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A B 1.5 V ICBO Collector Cutoff Current VCB= 1400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 A hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain--Bandwidth Product COB Output Capacitance Switching Times , Resistive load tstg Storage Time w w scs .i w IC= 0.1A; VCE= 10V IE= 0; VCB= 10V; ftest= 1.0MHz .cn mi e 8 3 MHz 210 pF 2.5 ICP= 4A, IB1= 0.8A; IB2= -1.6A; RL= 50 0.15 s tf Fall Time s isc Websitewww.iscsemi.cn 2 |
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