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APT17M120JCU2
ISOTOP(R) Boost chopper
MOSFET + SiC chopper diode Power module
K
VDSS = 1200V RDSon = 680m typ @ Tj = 25C ID = 17A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features
D
G
*
S
Power MOS 8TM MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
S D
K
* SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * * * ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
G
ISOTOP(R)
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Max ratings 1200 17 13 90 30 816 480 12 Unit V A V m W A
September, 2009 1-5 APT17M120JCU2 - Rev 0
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APT17M120JCU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS =1200V VGS = 0V Tj = 125C VGS = 10V, ID = 12A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 100 500 816 5 100 Unit A m V nA
3
680 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 12A Resistive switching @ 25C VGS = 15V VBus = 800V ID = 12A RG = 2.2 Min Typ 6696 615 80 260 42 120 45 27 145 42 ns nC Max Unit pF
SiC chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C Min 1200 Typ 32 56 10 1.6 2.3 80 96 69 Max 200 1000 1.8 3 Unit V A A V nC pF
IF = 10A, VR = 600V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min Mosfet SiC Diode 2500 -40
Typ
Max 0.26 1.65 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
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2-5
APT17M120JCU2 - Rev 0
September, 2009
Thermal and package characteristics
APT17M120JCU2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05
0.9 0.7 0.5 0.3 0.1 0.05 Single P ulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-5
APT17M120JCU2 - Rev 0
September, 2009
APT17M120JCU2
Low Voltage Output Characteristics 35 ID, Drain Current (A)
TJ=25C VGS=10V
Low Voltage Output Characteristics 20
TJ=125C
ID, Drain Current (A)
30 25 20 15 10 5 0 0
15
VGS=6, 7,8 & 9V 5V
TJ=125C
10
5
4.5V
0 5 10 15 20 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature VDS, Drain to Source Voltage (V) Transfert Characteristics 20 ID, Drain Current (A)
VGS=10V ID=12A VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle TJ=125C
RDSon, Drain to Source ON resistance
3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
15
10
TJ=25C
5
0 0 1 2 3 4 5 6 TJ, Junction Temperature (C) Gate Charge vs Gate to Source
VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 10000
Ciss
VGS, Gate to Source Voltage
12 10 8 6 4 2 0 0 40 80 120 160 200 240 280
VDS=960V VDS=600V
C, Capacitance (pF)
ID=12A TJ=25C
VDS=240V
1000
Coss
100
Crss
10 0 50 100 150 200
September, 2009 4-5 APT17M120JCU2 - Rev 0
VDS, Drain to Source Voltage (V) Gate Charge (nC)
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APT17M120JCU2
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 0.3 0.7 0.5 0.9
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 100
TJ=25C
20
IF Forward Current (A)
16
TJ=75C
IR Reverse Current (A)
75
12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
TJ=125C
50
TJ=75C TJ=125C TJ=175C TJ=25C
25
TJ=175C
0 400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
700 C, Capacitance (pF) 600 500 400 300 200 100 0
September, 2009 5-5 APT17M120JCU2 - Rev 0
1
10 100 VR Reverse Voltage
1000
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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