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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2532AL DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) *High Switching Speed APPLICATIONS *Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage VALUE 1500 800 7.5 16 UNIT V V Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak w w scs .i w V A 40 A 10 A 15 125 150 -55~150 A W .cn mi e IBM PC TJ Tstg Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2532AL TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.17A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.17A B 1.0 1.0 2.0 1.0 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125 VEB= 7.5V; IC= 0 mA IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain Switching times tstg tf Storage Time Fall Time w w scs .i w IC= 1A; VCE= 5V IC= 7A; VCE= 5V .cn mi e 6 mA 17 12.5 1.8 IC= 7A , IB(end)= 1A; LC= 100H; VCC= 138V; Cfb= 3nF 0.1 s s isc Websitewww.iscsemi.cn 2 |
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