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SEMICONDUCTORS BUV27 - BUV27A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS Symbol VCESM VCEO VCEsat ICsat IC ICM IB IBM Collector-Emitter Voltage Peak value ; VBE=0 Collector-Emitter Voltage Ratings BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A Value 240 300 120 150 1.5 1 8 7 15 25 4 6 Unit V V V A A A A A Collector-Emitter Saturation Voltage Collector Current Saturation Collector Current Collector Peak Current Base Current Base Current Symbol Pt Tj Ts Power Dissipation Junction Temperature Ratings @ Tmb < 25 BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A Value 65 150 Unit Watts C Storage Temperature range -65 to +150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings From junction to mounting base BUV27 BUV27A Value 1.92 Unit K/W Page 1 of 3 SEMICONDUCTORS BUV27 - BUV27A ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol ICEX ICER IEBO VCE0sust VCE(SAT) VBE(SAT) Ratings Collector Cutoff Current (*) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) VCE =VCESMAX, VBE= -1.5V TJ=125C VCE =VCESMAX, RBE= 50 TJ=125C VEB=5 V, IC=0 Min Typ Mx Unit 120 150 1 3 1 1.5 1.5 0.7 0.7 2.0 2.0 mA mA MA V Collector-Emitter Sustaining IB=0 , IC= 0.2A , L = 25mH Voltage Collector-Emitter saturation Voltage Base-Emitter Saturation Voltage IC=8 A, IB=800 mA IC=7 A, IB=700 mA IC=4 A, IB=400 mA IC=3.5 A, IB=350 mA IC=8 A, IB=800 mA IC=7 A, IB=700 mA BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A V V Symbol ton toff tf turn-on time turn-off time Fall time Ratings BUV27 BUV27A BUV27 BUV27A BUV27 BUV27A - Value 0.4 0.5 0.12 0.8 1.2 0.4 Unit s s s ICon=8 A, IBon= 800 mA ; IBoff=2 Ibon ; VCE= 50 V (*) Mesured with a half-sinewave voltage (curve tracer). Page 2 of 3 SEMICONDUCTORS BUV27 - BUV27A MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,51 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate Page 3 of 3 |
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