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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM4435AJPT CURRENT 8 Ampere FEATURE * Small flat package. (SO-8 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * P-Channel Enhancement 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 DD D D 5 1 SS S G 4 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM4435AJPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous -30 V V 20 -8 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A -50 2500 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2005-02 RATING CHARACTERISTIC CURVES ( CHM4435AJPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V -30 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = -250 A VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A -1 17 27 13 -3 20 V m 35 S Forward Transconductance VDS = -15V, ID = -8A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-15V, ID=-4.6A VGS=-5V V DD= -15V ID = -1.0A , VGS = -10 V RGEN= 6 22 7 8 12 6 110 35 28 nC ton 24 18 140 70 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -2.1 -1.2 A V Drain-Source Diode Forward Voltage IS = -2.1A , VGS = 0 V (Note 2) RATING CHARACTERISTIC CURVES ( CHM4435AJPT ) Typical Electrical Characteristics 25 -VGS=10,8,7,6,5V 30 25 C -ID, Drain Current (A) -ID, Drain Current (A) 20 -VGS=4V 24 15 18 10 12 5 -VGS=3V 6 TJ=125 C -55 C 3 4 5 6 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics -VGS, Gate to Source Voltage (V) 10 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VDS=-15V ID=-4.6A 8 6 4 2 0 0 5 10 15 20 25 30 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-8A VGS=-10V -50 0 50 100 150 200 Qg, Total Gate Charge (nC) Figure 3. Gate Charge 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250A -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature |
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