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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT4401PT CURRENT 0.6 Ampere FEATURE * Small flat package. ( SOT-23 ) .041 (1.05) .033 (0.85) SOT-23 * Low current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) (3) CONSTRUCTION * NPN Switching Transistor (2) MARKING * S1P .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1 3 .045 (1.15) .033 (0.85) 2 .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC total po wer dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - -55 - -55 MIN. MAX. 60 40 6 600 350 +150 150 +150 V V V mA mW C C C 2004-11 UNIT RATING CHARACTERISTIC CURVES ( CHT4401PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 200 UNIT C/W CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 1 50 mA V CE = 2 V;note 2 IC = 500 mA IC = 150 mA; IB = 1 5 mA IC = 500 mA; IB = 5 0 mA IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 5 0 mA Cc Ce fT collector capacitance emitter capacitance transition frequency IC = ic = 0; VBE = 500 mV; f = 140KHz IC = 20 mA; VCE = 10 V; f = 100 MHz - - 20 40 80 100 40 - - 750 - - 250 MIN. MAX. 50 50 - - - 300 - 400 750 950 1200 6.5 30 - mV mV mV mV pF pF MHz UNIT nA nA VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz - Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp 300 s; 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = -1 5 mA - - - - - - 35 15 20 250 200 60 ns ns ns ns ns ns RATING CHARACTERISTIC CURVES ( CHT4401PT ) Typical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 400 300 200 25 C 125 C 0.2 25 C 125 C 100 - 40 C 0.1 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRENT (mA) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 - 40 C Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 0.8 25 C 125 C 0.6 125 C 0.6 0.4 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) 500 100 10 1 0.1 V CB Emitter Transition and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C = 40V f = 1 MHz 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 RATING CHARACTERISTIC CURVES ( CHT4401PT ) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Ic 10 Switching Times vs Collector Current 400 I B1 = I B2 = 320 V cc = 25 V Ic 10 320 V cc = 25 V TIME (nS) 240 160 t off TIME (nS) 240 160 80 0 10 tf td ts tr 80 t on 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) 1000 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 RATING CHARACTERISTIC CURVES ( CHT4401PT ) CHAR. RELATIVE TO VALUES AT I C= 10mA CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 8 V CE = 10 V T A = 25oC Common Emitter Characteristics 2.4 2 1.6 1.2 0.8 0.4 0 V CE = 10 V I C = 10 mA h re h ie h fe hoe 6 hoe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 CHAR. RELATIVE TO VALUES AT VCE = 10V Common Emitter Characteristics 1.3 1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0 5 hoe 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 h re h ie I C = 10 mA T A = 25oC h fe RATING CHARACTERISTIC CURVES ( CHT4401PT ) Test Circuits 30 V 200 16 V 1.0 K 0 200ns 500 FIGURE 1: Saturated Turn-On Switching Timer - 1.5 V 6.0 V NOTE: BV EBO = 5.0 V 1k 37 30 V 1.0 K 0 200ns 50 FIGURE 2: Saturated Turn-Off Switching Time |
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