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CNX82A CNX82AX
NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
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APPROVALS UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 Certified to EN60950 by :Nemko - Certificate No. P01102464
2.54 7.0 6.0 1.2 7.62 6.62 4.0 3.0 0.5 3.0 0.5 3.35 1 2 3
Dimensions in mm 6 5 4 7.62 13 Max 0.26
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DESCRIPTION The CNX82A series of optically coupled isolator consists of an infrared light emitting diode and an NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. FEATURES l High Current Transfer Ratio (40% min) l Low Saturation Voltage suitable for TTL integrated circuits l High BV CEO (50V min) l High Isolation Voltage (5.3kV RMS ,7.5kV PK ) l Base pin unconnected for improved noise immunity in high EMI environment APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances
ABSOLUTEMAXIMUMRATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current Power Dissipation POWER DISSIPATION 50V 6V 50mA 160mW 60mA 6V 105mW
SURFACE MOUNT
OPTION SM
OPTION G
7.62
0.6 0.1 10.46 9.86
1.25 0.75
0.26 10.16
Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C)
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
6/2/08
DB92286
ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (IC / IF ) (Note 2) Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Response Time - Rise, tr Response Time - Fall, tf 5300 7500 5x1010 2 2 50 6 50 0.4 1.5 0.4 V VRMS VPK
s s
MIN TYP MAX UNITS 1.2 1.5 10 V
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TEST CONDITION IF = 10mA VR = 6V IC = 1mA IE = 100A VCE = 10V 10mA IF , 0.4V VCE 10mA IF , 5V VCE 10mA IF , 4mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 5V , IF = 10mA , RL = 75
V V nA
Coupled
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
6/2/08
DB92286m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW)
Collector Current vs. Collector-emitter Voltage 50 TA = 25C 50 30 20 15 20 10 0 10 IF = 5mA
150
Collector current IC (mA)
40 30
100
50
0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Collector-emitter saturation voltage VCE(SAT) (V) Forward Current vs. Ambient Temperature 80 70 Forward current IF (mA) 60 50 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5
0
2
4
6
8
10
Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( C ) Relative Current Transfer Ratio vs. Forward Current 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 1 2 VCE = 0.4V TA = 25C 5 10 20 50 IF = 10mA IC = 4mA
Relative current transfer ratio
IF = 10mA VCE = 0.4V
1.0
0.5
0 -30 0 25 50 75 Ambient temperature TA ( C ) 100
Relative current transfer ratio
Forward current IF (mA)
DB92286m-AAS/A3
6/2/08

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