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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Medium Power NPN Transistor
VOLTAGE 32 Volts
APPLICATION
* Medium Power Amplifier .
2SC2411KPT
CURRENT 0.5 Ampere
FEATURE
* Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA)
.018 (0.30) .019 (0.50)
SOT-23
.041 (1.05) .033 (0.85)
(1)
* PC= 200mW (mounted on ceramic substrate). * High saturation current capability.
CONSTRUCTION
.110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04)
* NPN Silicon Transistor * Epitaxial planner type
(3)
(2)
MARKING
* HFE(P):PT * HFE(Q):NC * HFE(R):1P.055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50)
.007 (0.177)
C (3)
CIRCUIT
.045 (1.15) .033 (0.85)
.002 (0.05)
(1) B
E (2)
Dimensions in inches and (millimeters)
SOT-23
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 40 32 5 500 500 10 350 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW
o
C C C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2002-10
RATING CHARACTERISTICS ( 2SC2411KPT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=20V IC=0; VEB=4V VCE=3V; Note 1 IC=100mA; Note 2 SYMBOL ICBO ICEO MIN. TYPE MAX. 1.0 1.0 UNITS uA uA
DC Current Gain
hFE
82
-
390
Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Output Collector Capacitance Transition Frequency
IC=500mA; IB=50mA IC=500mA; IB=50mA IE=ie=0; VCB=12V; f=1MHz IC=20mA; VCE=5V; f=100MHz
VCEsat VBEsat Cob fT
-
6.0 250
0.4 1.1 -
Volts Volts pF MHz
Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390
RATING CHARACTERISTIC CURVES ( 2SC2411KPT )
Fig.1
1000
Grounded emitter propagation characteristics
VCE=6V
COLLECTOR CURRENT : IC(mA)
Fig.2
100
Grounded emitter output characteristics (1)
COLLECTOR CURRENT : IC(mA)
Fig.3
500
Grounded emitter output characteristics (2)
Ta=25OC 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA
500
Ta=25OC
COLLECTOR CURRENT : IC(mA)
0.50
mA
200 100 50 20 10 5 2 1 0.5 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
A 0.45m A 0.40m
Ta=100OC 80OC 25OC 25OC - 55OC
0.35mA
400
0.30mA
0.25mA
50
300
0.20mA
0.15mA
200
0.6mA 0.4mA
0.10mA
0.05mA
100
0.2mA
0 0
BASE TO EMITTER VOLTAGE : VBE(V)
IB=0A 0 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V)
IB=0A
1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
RATING CHARACTERISTIC CURVES ( 2SC2411KPT )
Fig.4 Collector-emitter saturation voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
1
Fig.5 DC current gain vs. collector current
1000
Fig. 6 Gain bandwidth product vs. emitter current
500
DC CURRENT GAIN : hFE
0.5
500
O C Ta=100 O 75 C O 50 C O 100 25 C O 0C OC 50 - 25O C - 50
TRANSITION FREQUENCY : fT(MHz)
Ta Ta=25OC lC/lB=10
VCE=3V
Ta=25OC VCE=5V
200
200
0.2
0.1
100
0.05
20
50
0.02 0.5
1
2
5
10
20
50 100 200
500 1000
10 0.1 0.2
0.5 1
2
5 10 20
50 100 200 5001000
0.5
1
2
5
10
20
50
COLLECTOR CURRENT : IC(mA)
COLLECTOR CURRENT : IC(mA)
EMITTER CURRENT : IE(mA)
Fig.7
COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib (pF)
Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Ta=25OC f=1MHz IE=0A IC=0A
50
Cib
20
10
Co
b
5
2 0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB(V) EMITTER TO BASE VOLTAGE : VEB(V)

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