View APT20GN60B_4671504.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TYPICAL PERFORMANCE CURVES
APT20GN60B APT20GN60B_S(G) APT20GN60S APT20GN60B(G) APT20GN60S(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
(B)
TO -2 47
D3PAK
(S)
C G E
* 600V Field Stop
* * * * Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability 175C Rated
G
C
E
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT20GN60B_S(G) UNIT Volts
600 30 40 24 60 60A @ 600V 136 -55 to 175
Amps
@ TC = 175C
Switching Safe Operating Area @ TJ = 175C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 290A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.1 5.8 1.5 1.7 25
2
6.5 1.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 20A, Tj = 125C)
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A
nA
7-2009 050-7614 Rev B
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
TBD 300 N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT20GN60B_S(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 20A TJ = 175C, R G = 4.3
7,
MIN
TYP
MAX
UNIT
1110 50 35 9.5 120 10 70
VGE = nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 20A RG = 4.3 7 TJ = +25C
60 6 9 10 140 95 230 260 580 9 10 160 130 250 450 750
A
s
ns
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 20A RG = 4.3 7
55
ns
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
1.1 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
7-2009 Rev B 050-7614
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
40
V
GE
APT20GN60B_S(G)
90 15V 80 14V 13V
= 15V
35 IC, COLLECTOR CURRENT (A) TJ = 25C 30 25 TJ = 125C 20 15 TJ = 175C 10 5 0 TJ = -55C IC, COLLECTOR CURRENT (A)
70 60
12V 50 40 30 20 10 0 11V 10V 9V 8V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
FIGURE 1, Output Characteristics(TJ = 25C) 60 50 40 30 20 10 0 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125C) 16 14 12 VCE = 300V 10 8 6 4 2 0 0 20 40 60 80 100 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 2.5 IC = 40A 2.0 IC = 20A 1.5 IC = 10A 120 140 VCE = 480V
I = 20A C T = 25C
J
IC, COLLECTOR CURRENT (A)
TJ = -55C TJ = 25C TJ = 125C TJ = 175C
VCE = 120V
0
5 10 15 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0 IC = 40A
2.5 2.0
IC = 20A 1.5 1.0 IC = 10A
1.0 0.5 0
0.5 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.40
6
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.30 1.20
50
40
1.10 1.00
30
0.90
10 0 -50 -25 Rev B 050-7614
0.80 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
7-2009
20
APT20GN60B_S(G)
12 td(ON), TURN-ON DELAY TIME (ns) 10 8 6 4 2 T = 25C, T =125C J J 0
RG = 4.3 L = 100 H VCE = 400V
250 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns)
200
150
VGE =15V,TJ=125C
100
VGE =15V,TJ=25C
50
VCE = 400V RG = 4.3 L = 100 H
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 25
RG = 4.3, L = 100H, VCE = 400V
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120
0
20 tr, RISE TIME (ns) tf, FALL TIME (ns) 100 80 60 40 20 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1400 EON2, TURN ON ENERGY LOSS (J) 1200 1000
TJ = 125C
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C, VGE = 15V
15
TJ = 25C, VGE = 15V
10
TJ = 25 or 125C,VGE = 15V
5
RG = 4.3, L = 100H, VCE = 400V
0
5
10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1400 EOFF, TURN OFF ENERGY LOSS (J) 1200 1000 800 600 400 200 0
TJ = 25C
V = 400V CE V = +15V GE R = 4.3
G
0
5
TJ = 125C
800 600 400 200
TJ = 25C
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 3500 SWITCHING ENERGY LOSSES (J) 3000 2500 2000 1500 1000 500 0 Eon2,20A Eoff,20A Eoff,10A Eon2,10A 0
V = 400V CE V = +15V GE T = 125C
J
0
5 10 15 20 25 30 35 40 45 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 1400 SWITCHING ENERGY LOSSES (J) 1200 1000 800 600 400 200 0 Eoff,20A Eoff,10A Eon2,20A Eon2,10A 0
V = 400V CE V = +15V GE R = 4.3
G
Eon2,40A Eoff,40A
Eon2,40A
Eoff,40A
Rev B
7-2009
050-7614
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
2,000 Cies 1,000 500 IC, COLLECTOR CURRENT (A)
70 60 50 40 30 20 10 0
APT20GN60B_S(G)
C, CAPACITANCE ( F)
P
100 50 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
1.20 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
1.00
0.80
0.7
0.60
0.5
Note:
0.40
PDM
0.3
SINGLE PULSE
t1 t2
0.20
0.1 0.05
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0
10-5
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-4
1.0
140 FMAX, OPERATING FREQUENCY (kHz) 100
50
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % = 400V V CE R = 4.3
G
f max2 = Pdiss =
Pdiss - P cond E on2 + E off TJ - T C R JC
10 7
10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
5
050-7614
Rev B
7-2009
APT20GN60B_S(G)
APT15DQ60
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
tr Collector Current 90% 5% 5% 10% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) Collector Voltage 90% tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
Collector (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector Emitter
Heat Sink (Collector) and Leads are Plated
7-2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
050-7614
Rev B Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

▲Up To Search▲

Price & Availability of APT20GN60B

	To Download APT20GN60B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .